TSD1858 Low Vcesat NPN Transistor TO-251 (IPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No. TSD1858CH C5G Package Packing TO-251 75pcs / Tube Note: “G” denote for Halogen Free Product Structure ● ● 0.3V @ IC = 1A, IB = 100mA Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Limit Unit VCBO VCEO VEBO V V V o PD 180 160 5 1.5 3 (note1) 1 o PD 15 DC Pulse Collector Current IC Power Dissipation @ TA=25 C Power Dissipation @ TC=25 C Thermal Resistance - Junction to Case Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw≤380us, Duty≤2% W W 125 o RӨJA 8.33 o TJ TSTG +150 - 55 to +150 RӨJC Thermal Resistance - Junction to Ambient A C/W C/W o C C o Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 1mA, IE = 0 IC = 10mA, IB = 0 IE = 50uA, IC = 0 VCB = 160V, IE = 0 VEB = 4V, IC = 0 IC= 1A, IB = 100mA VCE = 5V, IC = 5mA VCE = 5V, IC = 200mA DC Current Transfer Ratio VCE = 5V, IC = 500mA VCE =5V, IE=150mA, Transition Frequency f=100MHz Output Capacitance VCB = 10V, f=1MHz Note: Pulse test: pulse width ≤380uS, Duty cycle≤2% 1/4 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE 1 hFE 2 180 160 5 ----180 30 -----0.15 ---- ---1 1 0.3 0.8 390 -- V V V uA uA V V fT -- 200 -- MHz Cob -- 13 -- pF Version: E11 TSD1858 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain (VCE=5V, TA=25°C) Figure 2. VCE(SAT) vs. Collector Current Figure 3. VBE(SAT) vs. Collector Current Figure 4. Cib vs. VCE (IC/IB=10, TA=25°C) (f=1MHz, TA=25°C) Figure 5. Frequency vs. Emitter Current Figure 6. Cob vs. VCB (VCE=5V, TA=25°C) (f=1MHz, TA=25°C) (IC/IB=10, TA=25°C) 2/4 Version: E11 TSD1858 Low Vcesat NPN Transistor TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 3/4 Version: E11 TSD1858 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: E11