TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g o MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current per diode SYMBOL TSF10H100C UNIT VRRM 100 V 10 IF(AV) A 5 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM 0.5 A Non-repetitive avalanche energy at L=60mH, per diode EAS 60 mJ dV/dt VAC 10000 V/μs 1500 V Voltage rate of change (Rated VR) Isolation voltage from terminal to heatsink t = 1 min Breakdown voltage ( IR =1.0mA ) Instantaneous forward voltage per diode ( Note2 ) VBR IF = 5A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = 100°C Typical thermal resistance (Note 3) Operating junction temperature range Storage temperature range VF IR MIN. TYP. MAX. 100 - - - - 0.8 - - 0.7 - - 100 - - 6 V V μA mA O RθJC 4.3 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: 2.0 μs Pulse width, f=1.0 kHz Note 2: Pulse test with pulse width=300 μs, 1% duty cycle Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate Document Number: DS_D1401020 Version: C14 TSF10H100C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING ITO-220AB 50 / Tube CODE TSH10H100C C0 Suffix "G" EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSF10H100C C0 TSF10H100C C0 TSF10H100C C0G TSF10H100C C0 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 12 10 8 6 4 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 2 TJ=150oC 10 TJ=25oC TJ=125oC 1 TJ=100oC 0.1 0.01 0 0 25 50 75 100 125 0 150 0.2 0.4 CASE TEMPERATURE (oC) 0.8 1 1.2 FORWARD VOLTAGE (V) FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 TYPICAL REVERSE CHARACTERISTICS 100 1000 TJ=150oC 10 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 0.6 1 TJ=125oC 0.1 TJ=100oC 0.01 100 f=1.0MHz Vsig=50mVp-p 0.001 TJ=25oC 0.0001 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number: DS_D1401020 100 10 0.1 1 10 100 REVERSE VOLTAGE (V) Version: C14 TSF10H100C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H I 0.95 0.50 1.45 0.90 0.037 0.020 0.057 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.45 - 0.057 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1401020 Version: C14