TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSM160N10CZ C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current TC=70°C TA=25°C 160 ID TA=70°C 127 A 14.2 11.4 Drain Current-Pulsed Note 1 IDM 620 A Avalanche Current, L=0.5mH IAS, IAR 40 A Avalanche Energy, L=0.5mH EAS, EAR 400 mJ TC=25°C Maximum Power Dissipation TC=70°C TA=25°C 300 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 210 W 2.4 1.68 TSTG -55 to +175 °C TJ -55 to +175 °C Symbol Limit * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/6 Unit 0.5 o 62.5 o C/W C/W Version: B13 TSM160N10 100V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 4.5 5.5 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 154 -- Qgs -- 35 -- Qgd -- 40 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30V, ID = 30A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 9840 -- Coss -- 750 -- Crss -- 260 -- td(on) -- 25 -- tr -- 40 -- td(off) -- 85 -- tf -- 45 -- VSD - 0.8 1.3 nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time RG = 3.3Ω Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward VGS=0V, IS=30A Voltage nS V Reverse Recovery Time IS = 30A, TJ=25 C tfr 120 nS Reverse Recovery Charge dI/dt = 100A/us Qfr 160 nC o Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 2/6 Version: B13 TSM160N10 100V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Gate Threshold Voltage Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: B13 TSM160N10 100V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: B13 TSM160N10 100V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: B13 TSM160N10 100V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B13