TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Ordering Information Part No. Package Packing TSM1NB60SCT B0 TO-92 1Kpcs / Bulk TSM1NB60SCT B0G TO-92 1Kpcs / Bulk TSM1NB60SCT A3 TO-92 2Kpcs / Ammo TSM1NB60SCT A3G TO-92 Note: “G” denotes for Halogen Free N-Channel MOSFET 2Kpcs / Ammo Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 0.5 A 0.25 A 2 A Tc=25ºC Continuous Drain Current ID Tc=100ºC Pulsed Drain Current * IDM Single Pulse Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature EAS 5 mJ dv/dt 4.5 V/ns PTOT 2.5 W TJ 150 ºC o TSTG -55 to +150 C Symbol Limit RӨJL 50 o 110 o Thermal Performance Parameter Thermal Resistance - Junction to Lead Thermal Resistance - Junction to Ambient RӨJA 1/6 Unit C/W C/W Version: A12 TSM1NB60S 600V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.25A RDS(ON) -- 8 10 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 10V, ID = 0.5A gfs -- 0.8 -- S Dynamic Total Gate Charge VDS = 480V, ID = 0.5A, Qg -- 6.1 -- Gate-Source Charge VGS = 10V Qgs -- 1.4 -- Gate-Drain Charge (Note 4,5) Qgd -- 3.3 -- Ciss -- 138 -- Coss -- 17.1 -- Crss -- 4.2 -- td(on) -- 7.7 -- tr -- 6.8 -- td(off) -- 15.3 -- tf -- 14.9 -- Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 0.5A, VDD = 300V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 0.5 A Source Current (Pulse) the MOSFET ISM -- -- 2 A Diode Forward Voltage IS = 0.5A, VGS = 0V VSD -- 0.9 1.4 V Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=0.5A, L=10mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤0.5A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 2/6 Version: A12 TSM1NB60S 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/6 Version: A12 TSM1NB60S 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/6 Version: A12 TSM1NB60S 600V N-Channel Power MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A12 TSM1NB60S 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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