TSC TSM2308CXRFG

TSM2308
60V N-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Gate
2. Source
3. Drain
60
ID (A)
156 @ VGS = 10V
3
192 @ VGS = 4.5V
2.1
Block Diagram
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
DC-DC Power System
●
Load Switch
Ordering Information
Part No.
TSM2308CX RFG
Package
Packing
SOT-23
3Kpcs / 7” Reel
N-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
3
A
IDM
6
A
IS
3
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
TA=25 C
1.25
PD
o
TA=75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
W
0.8
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
80
o
150
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
2
b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec.
1/6
Version: A11
TSM2308
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
--
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 48V, VGS = 0V
IDSS
µA
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Diode Forward Voltage
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 2A
IS = 1A, VGS = 0V
VDS = 48V, ID = 3A,
VGS = 4.5V
VDS = 15V, VGS = 0V,
f = 1.0MHz
--
--
1.0
--
130
156
--
160
192
VSD
--
--
-1.2
Qg
--
3.99
--
Qgs
--
1.31
--
Qgd
--
1.78
--
Ciss
--
511
--
Coss
--
38
--
Crss
--
25
--
td(on)
--
5.3
--
RDS(ON)
mΩ
V
nC
pF
b.c
Turn-On Delay Time
Turn-On Rise Time
VDD = 30V, ID = 3A, VGEN
Turn-Off Delay Time
= 10V, RG = 3.3Ω
tr
--
17.5
--
td(off)
--
14.2
--
--
2.4
--
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/6
nS
Version: A11
TSM2308
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A11
TSM2308
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Capacitance
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A11
TSM2308
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.25
2.55
0.089
0.100
1.20
1.40
0.047
0.055
2.80
3.00
0.110
0.118
0.90
1.15
0.035
0.045
0.00
0.10
0.000
0.004
0.30
0.50
0.012
0.020
0.08
0.15
0.003
0.006
0.30
0.50
0.012
0.020
5º
10º
5º
10º
Marking Diagram
08 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: A11
TSM2308
60V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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6/6
Version: A11