TSM6N60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6.0 Features ● ● ● Block Diagram High power and current handing capability. Low RDS(ON) 1.25mΩ (Max.) Low gate charge typical @ 20.7nC (Typ.) Ordering Information Part No. Package Packing TO-251 75pcs / Tube TSM6N60CH C5G TSM6N60CP ROG TO-252 Note: “G” denotes for Halogen Free 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Tc = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Tc = 25ºC Continuous Drain Current Pulsed Drain Current Tc = 100ºC (Note 1) Single Pulse Avalanche Energy (Note 2) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Symbol Limit Unit VDS 600 V VGS ±30 V 6.0 A 4.2 A IDM 24 A EAS 180 mJ PTOT 89 W TJ 150 ID Storage Temperature Range TSTG Note1: Repetitive Rating : Pulse width limited by maximum junction temperature. Note2: L=10mH, IAS =6.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25ºC ºC o -55 to +150 C Thermal Performance Parameter Symbol Limit Thermal Resistance - Junction to Case RӨJC 1.4 Thermal Resistance - Junction to Ambient RӨJA 50 1/5 Unit o C/W Version: A12 TSM6N60 600V N-Channel Power MOSFET Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 3.0A RDS(ON) -- 1.1 1.25 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 2.75 4 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Qg -- 20.7 28 Qgs -- 5.1 -- Qgd -- 5.4 -- Ciss -- 1248 -- Coss -- 117 -- Crss -- 11.3 -- Turn-On Delay Time td(on) -- 21 44 Turn-On Rise Time VGS = 10V, ID = 6A, tr -- 7.6 15 Turn-Off Delay Time VDD = 300V, RGEN =25Ω td(off) -- 57 107 tf -- 6.2 8 IS -- -- 6.0 A VSD -- 0.86 1.5 V Dynamic (Note a) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 480V, ID = 6A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF (Note a) Turn-Off Fall Time nS Source-Drain Diode Ratings and Characteristic Source Current Diode Forward Voltage IS = 6.0A, VGS = 0V Note a: Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. 2/5 Version: A12 TSM6N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters 3/5 Version: A12 TSM6N60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters 4/5 Version: A12 TSM6N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A12