TSC TSM7900D_10

TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
TDFN 3x3
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6, 7, 8. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
20
Features
ID (A)
32 @ VGS = 4.5V
6.5
40 @ VGS = 2.5V
5.0
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
●
ESD Protect 2KV
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
TSM7900DCQ RF
Package
Packing
TDFN 3x3
3Kpcs / 7” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS @4.5V.
ID
6
A
Pulsed Drain Current, VGS @4.5V
IDM
30
A
IS
1.4
A
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
0.8
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
1.25
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
30
o
C/W
50
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: B07
TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
0.8
1.0
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS = 5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
30
35
--
35
40
Drain-Source On-State Resistance
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.0A
RDS(ON)
mΩ
Forward Transconductance
VDS = 10V, ID = 6.0A
gfs
--
30
--
S
Diode Forward Voltage
IS = 1.5A, VGS = 0V
VSD
--
0.6
1.2
V
Qg
--
15
20
Qgs
--
3.4
--
Qgd
--
1.2
--
Ciss
--
950
--
Coss
--
450
--
Crss
--
125
--
td(on)
--
140
200
tr
--
210
250
td(off)
--
3700
4800
--
2000
2600
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 6A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: B07
TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B07
TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B07
TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
TDFN Mechanical Drawing
TDFN 3x3 DIMENSION
DIM
5/6
MILLIMETERS
MIN.
TYP.
MAX.
A
1.750
1.800
1.850
B
0.470
0.520
0.570
C
0.270
0.320
0.370
D
2.950
3.000
3.050
E
2.950
3.000
3.050
F
2.250
2.300
2.350
G
0.177
0.203
0.280
H
0.610
0.660
0.710
I
0.005
0.020
0.050
J
0.650
0.750
0.850
Version: B07
TSM7900D
20V Dual N-Channel MOSFET w/ESD Protected
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: B07