TSP10U60S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC TO-277A(SMPC) - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case：TO-277A(SMPC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Indicated by cathode band Weight： 0.095 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER TSP10U60S Symbol Marking code UNIT 10U60 Maximum repetitive peak reverse voltage VRRM 60 V Maximum average forward rectified current (Note 1) IF(AV) 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 280 A Maximum instantaneous forward voltage per diode (Note 2) IF = 5A IF = 10A IF = 10A Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C VF TJ = 125°C TJ = 25°C TJ = 125°C IR MIN TYP MAX - 0.40 - - 0.47 0.54 - 0.43 0.47 - 80 300 uA - - 100 mA V Maximum DC reverse voltage VDC 42 Typical thermal resistance per diode RθjC 6 Operating junction temperature range TJ - 40 to + 150 O C - 40 to + 150 O C Storage temperature range TSTG V O C/W Note1 : Mounted on 30 mm x 30 mm 4 oz. pad PCB Note2 : Pulse Test with Pulse Width=300μs, 1% Duty Cycle Document Number：DS_D1311023 Version:A13 TSP10U60S Taiwan Semiconductor ORDERING INFORMATION GREEN COMPOUND PACKING CODE PART NO. CODE S1 TSP10U60S Suffix "G" S2 PACKAGE PACKING SMPC 1500/ 7" Plastic reel SMPC 6000/ 13" Plastic reel Note : For SMPC: Packing code (Whole series with green compound) EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSP10U60S S1G TSP10U60S S1 GREEN COMPOUND DESCRIPTION CODE Green compound G RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 20 15 10 5 WITH HEATSINK 30mm x 30mm 4 oz. pad PCB 0 0 25 50 75 100 125 10 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 TJ=85oC TJ=25oC 0.01 150 0 0.1 0.2 CASE TEMPERATURE (oC) 0.4 0.5 0.6 FORWARD VOLTAGE (V) FIG. 3 TYPICAL REVERSE CHARACTERISTICS FIG. 4 TYPICAL JUNCTION CAPACITANCE 100 10000 TJ=150oC 10 TJ=125oC CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 0.3 TJ=100oC 1 1000 TJ=85oC 0.1 f=1.0MHz Vsig=50mVp-p TJ=25oC 0.01 10 20 30 40 50 60 70 80 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number：DS_D1311023 90 100 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version:A13 TSP10U60S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 5.650 5.750 0.222 0.226 B 6.350 6.650 0.250 0.262 C 4.550 4.650 0.179 0.183 D 3.540 3.840 0.139 0.151 E 4.235 4.535 0.167 0.179 F 1.850 2.150 0.073 0.085 G 3.170 3.470 0.125 0.137 H I 1.043 1.000 1.343 1.300 0.041 0.039 0.053 0.051 J 1.930 2.230 0.076 0.088 K 0.175 0.325 0.007 0.013 L 1.000 1.200 0.039 0.047 SUGGESTED PAD LAYOUT Symbol A B C D E F Unit(mm) 4.8 4.72 1.4 1.27 6.8 1.04 MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code Document Number：DS_D1311023 Version:A13