UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (PULSE) Collector Power Dissipation VCBO VCEO VEBO Ic Icp Pc Junction Temperature Storage Temperature Tj Tstg RATING UNIT -400 -400 -5 -200 -400 1 10( Tc=25°C) 150 -55 ~ +150 V V V mA mA W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Reverse Transfer Capacitance BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob Cre UTC TEST CONDITIONS IC= -10µA,IE=0 IC= -1mA, IB=0, RBE=∞ IE= -10µA,IC=0 VCB= -300V,IE=0 VEB= -4V,IC=0 VCE= -10V, Ic= -50mA IC= -50mA,IB= -5mA IC= -50mA,IB= -5mA VCB= -30V,f=1MHz VCB= -30V,f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX -400 -400 -5 -0.1 -0.1 200 -0.8 -1.0 60 5 4 CO. LTD UNIT V V V µA µA V V pF pF 1 QW-R209-009,A UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL Gain-Bandwidth Product Turn-on Time Turn-off Time fT ton toff TEST CONDITIONS MIN TYP VCE= -30V,IC= -10mA See test circuit See test circuit MAX 70 0.25 5 UNIT MHz µs µs CLASSIFICATION OF hFE RANK RANGE D 60-120 E 100-200 TEST CIRCUIT(Unit : (resistance : Ω, capacitance : F) IB1 INPUT OUTPUT RB IB2 RL VR PW=20μs Duty Cycle≦1% 50 + + 100μ 470μ VCC= -150V VBE= 1V -10IB1= 10IB2=Ic= -50mA RL=3kΩ,RB=200Ω at Ic= -50mA ELECTRICAL CHARACTERISTICS CURVES IC-VBE -120 I(tot) mA -80 -60 TA=25℃ -40 TA=70℃ -20 0 TA= -30℃ 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage,VBE-V UTC 3 2 DC Current Gain,hFE -100 Collector Current,Ic-mA hFE-Ic 5 VCE= -10V 100 7 5 VCE= -10V TA=70℃ TA=25℃ TA= -30℃ 3 2 10 7 5 7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3 Collector Current,Ic- mA UNISONIC TECHNOLOGIES CO. LTD 2 QW-R209-009,A UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR Collector Current,Ic mA VCE (sat)-Ic 7 5 3 2 Switching Time,SW Time-μs T A=70℃ T A=-30℃ 7-1.0 10 7 5 3 2 1.0 7 5 3 2 2 3 5 7 -10 2 3 5 7-100 2 Collector Current,Ic- mA Switch Time -Ic 3 2 tf ton T A=-30℃ -1.0 7 5 T A=25℃ T A=75℃ 7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3 Collector Current,Ic- mA -1000 5 3 2 tstg ASO Icp 10ms Ic 100ms 1ms DC O (TC pe =2 ratio 5℃ n ) -100 DC 5 3 2 -10 5 3 2 -1.0 52 Op era tio n (T A =2 5℃ ) T C=25℃ 3 5 7 -10 2 3 5 7 -100 2 3 Collector to Emitter Voltage,V CE -V 5 Pc -Ta 12 Collector Dissipation,Pc -W 5 3 2 T A=25℃ VCC =-150V 0.1 10IB1=-10IB2=IC Ta=25℃ 7 5 -1.0 2 3 5 7 -10 2 3 5 7 -100 2 3 5 Collector Current,Ic- mA 10 8 6 4 2 0 UTC 7 Base to Emitter Saturation Voltage,VBE(sat)-V -1.0 7 5 Ic/I B=10 Ic/I B=10 3 2 -0.1 V BE (sat)-Ic -10 Collector Current,Ic- mA Collector to Emitter Saturation Voltage,VCE(sat)-V 5 No heat sink 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -℃ UNISONIC TECHNOLOGIES CO. LTD 3 QW-R209-009,A UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R209-009,A