UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES 1 TO-92 * Low frequency power amplifier * Complement to 2SB562 1 TO-92NL *Pb-free plating product number: 2SD468L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SD468-x-T92-B 2SD468L-x-T92-B 2SD468-x-T92-K 2SD468L-x-T92-K 2SD468-x-T9N-B 2SD468L-x-T9N-B 2SD468-x-T9N-K 2SD468L-x-T9N-K www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B E C B E C B Packing Tape Box Bulk Tape Box Bulk 1 of 4 QW-R211-003.B 2SD468 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Collector Peak Current ICP 1.5 A Collector Power Dissipation PC 0.9 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Voltage Gain Bandwidth Product Collector Output Capacitance Note: Pulse test SYMBOL BVCBO BVCEO BVEBO ICBO hFE VCE(SAT) VBE fT Cob TEST CONDITIONS Ic=10µA, IE=0 Ic=1mA, RBE=∞ IE=10µA, IC=0 VCB=20V, IE=0 VCE=2V, Ic=0.5A (Note) Ic=0.8A, IB=0.08A (Note) VCE=2V, Ic=0.5A (Note) VCE=2V, Ic=0.5A (Note) VCB=10V, IE=0, f=1MHz MIN 25 20 5 TYP 85 0.2 0.79 190 22 MAX 1 240 0.5 1 UNIT V V V µA V V MHz pF CLASSIFICATION OF hFE RANK RANGE B 85 - 170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 120 - 240 2 of 4 QW-R211-003.B 2SD468 9W Collector Current, IC (A) . =0 PC Collector Power Dissipation, PC (W) TYPICAL CHARACTERISTICS DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 5,000 VCE=2V 300 Ta=75℃ 25℃ 100 30 10 3 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DC Current Transfer Ratio, hFE 1,000 Collector current, IC (mA) NPN SILICON TRANSISTOR VCE=2V 2,000 1,000 500 Ta=75℃ 200 100 25℃ 50 20 10 5 1 3 10 30 100 300 1,000 Collector Current, IC (mA) 3 of 4 QW-R211-003.B 2SD468 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Collector Output Capacitance vs. Collector to Base Voltage 200 f=1MHz IE=0 100 50 20 10 5 2 5 10 20 50 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-003.B