UTC-IC 81CXXX

UNISONIC TECHNOLOGIES CO., LTD
81CXXX/81NXXX
CMOS IC
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
3
3
1
2
„
DESCRIPTION
2
SOT-23-3
SOT-23
(JEDEC TO-236)
The UTC 81CXXX and 81NXXX series are good performance
voltage detector and manufactured by CMOS technologies with
highly accurate, low power consumption. A delay circuit is built-in
to each detector, therefore, peripherals are unnecessary and high
density mounting is possible. Detect voltage is extremely accurate
with minimal temperature drift. Both CMOS and N-channel open
drain output configurations are available.
„
1
1
SOT-89
SOT-223
FEATURES
* Highly Accurate:
* Built-In Delay time :
Detect voltage ± 2%
1ms ~ 50ms
50ms ~ 200ms
200ms ~ 400ms
1
* Detect Voltage Temperature
Characteristics:
TYP± 100ppm/°C
* Wide Operating Voltage Range : 0.7V ~ 10.0V
* Low Current Consumption :
TYP 1.0μA (VIN=2.0V)
„
1
TO-92
ORDERING INFORMATION
CMOS:
Ordering Number
①:Delay Time
Lead Free
Halogen Free
Duration
Code
81CxxL-①-AA3-B-R
81CxxG-①-AA3-B-R
81CxxL-①-AB3-E-R
81CxxG-①-AB3-E-R
81CxxL-①-AE3-3-R
81CxxG-①-AE3-3-R
81CxxL-①-AE3-5-R
81CxxG-①-AE3-5-R
81CxxL-①-AE3-2-R
81CxxG-①-AE3-2-R
1~50 ms
P
81CxxL-①-AE2-3-R
81CxxG-①-AE2-3-R
50~200 ms
Q
81CxxL-①-AE2-5-R
81CxxG-①-AE2-5-R
200~400 ms
R
81CxxL-①-AE2-2-R
81CxxG-①-AE2-2-R
81CxxL-①-T92-D-B
81CxxG-①-T92-D-B
81CxxL-①-T92-E-B
81CxxG-①-T92-E-B
81CxxL-①-T92-D-K
81CxxG-①-T92-D-K
81CxxL-①-T92-E-K
81CxxG-①-T92-E-K
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
SOT-23-3
SOT-23-3
SOT-23-3
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
O
G
I
O
I
G
O
G
I
G
O
I
I
O
G
O
G
I
G
O
I
I
O
G
I
G
O
O
I
G
I
G
O
O
I
G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
1 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
ORDERING INFORMATION(Cont.)
N-Channel:
Ordering Number
①:Delay Time
Lead Free
Halogen Free
Duration
Code
81NxxL-①-AA3-B-R
81NxxG-①-AA3-B-R
81NxxL-①-AB3-E-R
81NxxG-①-AB3-E-R
81NxxL-①-AE3-3-R
81NxxG-①-AE3-3-R
81NxxL-①-AE3-5-R
81NxxG-①-AE3-5-R
81NxxL-①-AE3-2-R
81NxxG-①-AE3-2-R
1~50 ms
H
81NxxL-①-AE2-3-R
81NxxG-①-AE2-3-R
50~200 ms
J
81NxxL-①-AE2-5-R
81NxxG-①-AE2-5-R
200~400 ms
K
81NxxL-①-AE2-2-R
81NxxG-①-AE2-2-R
81NxxL-①-T92-D-B
81NxxG-①-T92-D-B
81NxxL-①-T92-E-B
81NxxG-①-T92-E-B
81NxxL-①-T92-D-K
81NxxG-①-T92-D-K
81NxxL-①-T92-E-K
81NxxG-①-T92-E-K
Note: 1. Pin assignment: I:VIN O:VOUT G:VSS
2. xx: Output Voltage, refer to Marking Information.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Package
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
SOT-23-3
SOT-23-3
SOT-23-3
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
O
G
I
O
I
G
O
G
I
G
O
I
I
O
G
O
G
I
G
O
I
I
O
G
I
G
O
O
I
G
I
G
O
O
I
G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
2 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
MARKING INFORMATION
PACKAGE
SOT-223
SOT-89
TO-92
VOLTAGE CODE
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
MARKING
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
PACKAGE INTEGER* CODE DECIMAL** CODE
1.
1
.0
A
2.
2
.1
B
3.
3
.2
C
4.
4
.3
D
SOT-23
5.
5
.4
E
SOT-23-3
6.
6
.5
F
.6
G
.7
H
.8
J
.9
K
* Represents the integer of the Detect Voltage
** Represents the decimal number of the Detect Voltage
„
MARKING
EXAMPLE:
81N27
3
N: N-Channel
Voltage Code
2HN G
2
UNISONIC TECHNOLOGIES CO., LTD
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Pin Code
G: Halogen Free
1
3 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
BLOCK DIAGRAM
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4 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VIN
IOUT
RATINGS
UNIT
12
V
50
mA
CMOS
VSS-0.3 ~ VIN+0.3
V
Output Voltage
VOUT
N-Ch open drain
VSS-0.3 ~ 9
V
SOT-223
800
mW
SOT-23/ SOT-23-3
150
mW
Power Dissipation
PD
SOT-89
500
mW
TO-92
300
mW
Operating Temperature
TOPR
-30 ~ +80
°C
Storage Temperature
TSTG
-40 ~ +125
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Input Voltage
Output Current
„
THERMAL DATA
PARAMETER
SYMBOL
SOT-223
SOT-23/ SOT-23-3
SOT-89
TO-92
Junction to Case
„
θJC
RATINGS
20
UNIT
°C/W
200
45
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Detection voltage (1.0V ~ 1.9V)
PARAMETER
SYMBOL
CIRCUIT
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1
Supply Current
ISS
2
3
Output Current
IOUT
4
VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
TEST CONDITIONS
VDF=1.6V ~ 6.0V
VIN=1.5V
VIN=5.0
N-ch
VDS=0.5V, VIN =1.0V
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
MIN
TYP
MAX UNIT
VDF (T)
VDF (T)
VDF (T)
V
×0.98
×1.02
VDF
VDF
VDF
V
×0.02 ×0.05 ×0.08
0.7
10.0
V
0.9
2.6
μA
2.0
4.2
μA
ΔVDF
ΔTOPR × VDF
tDLY *
5
VIN changes from
0.6V ~ 10V
UNISONIC TECHNOLOGIES CO., LTD
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mA
2.2
50
-15.4
mA
±100
ppm/°C
200
ms
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QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL
CIRCUIT
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1
Supply Current
ISS
2
3
Output Current
IOUT
4
VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
tDLY *
5
VIN=5.0V
N-ch
VDS=0.5V, VIN =2.0V
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
VIN changes from
0.6V ~ 10V
CIRCUIT
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1
Supply Current
ISS
2
3
IOUT
4
VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
VDF=1.6V ~ 6.0V
VIN=2.0V
MIN
TYP
MAX UNIT
VDF (T)
VDF (T)
VDF (T)
V
×0.98
×1.02
VDF
VDF
VDF
V
×0.02
×0.05 ×0.08
0.7
10.0
V
1.0
3.0
μA
2.0
4.2
μA
ΔVDF
ΔTOPR × VDF
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL
Output Current
TEST CONDITIONS
TEST CONDITIONS
VDF=1.6V ~ 6.0V
VIN =3.0V
VIN =5.0V
N-ch
VDS=0.5V, VIN =3.0V
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
5
VIN changes from
0.6V ~ 10V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
mA
-15.4
mA
±100
ppm/°C
50
200
ms
MIN
TYP
MAX UNIT
VDF (T)
VDF (T)
VDF (T)
V
×0.98
×1.02
VDF
VDF
VDF
V
×0.02 ×0.05 ×0.08
0.7
10.0
V
1.3
3.4
μA
2.0
4.2
μA
mA
10.1
ΔVDF
ΔTOPR × VDF
tDLY *
7.9
50
-15.4
mA
±100
ppm/°C
200
ms
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QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL
CIRCUIT
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1
Supply Current
ISS
2
3
Output Current
IOUT
4
VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
5
SYMBOL
CIRCUIT
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
Supply Current
VIN
ISS
1
2
3
Output Current
VDF=1.6V ~ 6.0V
VIN=4.0V
VIN=5.0V
N-ch
VDS=0.5V, VIN=4.0V
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
MIN
TYP
MAX UNIT
VDF (T)
VDF (T)
VDF (T)
V
×0.98
×1.02
VDF
VDF
VDF
V
×0.02 ×0.05 ×0.08
0.7
10.0
V
1.5
3.8
μA
2.0
4.2
μA
ΔVDF
ΔTOPR × VDF
tDLY *
Detection voltage (5.0V)
PARAMETER
TEST CONDITIONS
IOUT
4
VIN changes from
0.6V ~ 10V
TEST CONDITIONS
VDF=1.6V ~ 6.0V
VIN=5.0V
N-ch
VDS=0.5V, VIN =5.0V
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
11.5
mA
-15.4
mA
±100
ppm/°C
50
200
ms
MIN
TYP
MAX UNIT
VDF (T)
VDF (T)
VDF (T)
V
×0.98
×1.02
VDF
VDF
VDF
V
×0.02 ×0.05 ×0.08
0.7
10.0
V
2.0
4.2
μA
13.0
mA
-15.4
mA
ΔVDF
VDF
±100
ppm/°C
ΔTOPR × VDF
Temperature Characteristics
VIN changes from
Transient Delay Time
50
200
ms
5
tDLY *
(VDR ÆVOUT inversion)
0.6V ~ 10V
VDF (T): established detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
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www.unisonic.com.tw
7 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
TEST CIRCUITS
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8 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS
(1) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME
81C30Q
81C30R
400
200
320
tDLY (msec)
tDLY (msec)
150
240
100
160
50
-30
-10
10
30
50
70
Ambient Temp., Ta ( ℃)
80
-30
-10
10
30
70
50
Ambient Temp., Ta ( ℃)
81C30P
50
tDLY (msec)
40
30
20
10
0
-30
-10
10
30
50
70
Ambient Temp., Ta ( ℃)
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9 of 16
QW-R502-039,N
81CXXX/81NXXX
„
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(2)
P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
(2)
TRANSIENT DELAY TIME vs. INPUT VOLTAGE
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CMOS IC
10 of 16
QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(3) SUPPLY CURRENT vs. INPUT VOLTAGE
81N16
3.0
Ta=80℃
2.0
25℃
1.0
0.0
0
2
4
81N25
4.0
Supply Current, Iss ( μ A)
Supply Current, Iss ( μ A)
4.0
6
8
3.0
Ta=80℃
2.0
25℃
1.0
0.0
10
0
2
Input Voltage, V IN (V)
81N27
3.0
Ta=80℃
2.0
25℃
1.0
0
2
4
6
8
2.0
25℃
1.0
0
2
Supply Current, Iss ( μ A)
Supply Current, Iss ( μ A)
2.0
25℃
1.0
4
6
8
10
Input Voltage, V IN (V)
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6
8
10
81N30
4.0
Ta=80℃
2
4
Input Voltage, V IN (V)
81N29
0
10
Ta=80℃
0.0
10
3.0
0.0
8
3.0
Input Voltage, V IN (V)
4.0
6
81N28
4.0
Supply Current, Iss ( μ A)
Supply Current, Iss ( μ A)
4.0
0.0
4
Input Voltage, V IN (V)
3.0
Ta=80℃
2.0
25℃
1.0
0.0
0
2
4
6
8
10
Input Voltage, V IN (V)
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QW-R502-039,N
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
Supply Current, Iss (μA)
Supply Current, Iss (μA)
„
CMOS IC
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
(4) OUTPUT VOLTAGE vs. INPUT VOLTAGE
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QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29
3
2
1
0
0
2
3
Input Voltage, VIN (V)
4
3
2
1
0
4
VIN-VOUT:100kΩ
Ta=25℃ / 80℃
0
1
2
3
4
Input Voltage, VIN (V)
5
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
1
81N30
5
VIN-VOUT:100kΩ
Ta=25℃ / 80℃
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
4
(5) N-CHANNEL DRIVRE OUTPUT CURRENT vs. VDS
81N16
15
81N16
1400
Ta=25℃
Ta=25℃
Output Current, IOUT (uA)
Output Current, IOUT (mA)
1200
12
VIN=1.5V
9
6
1.0V
3
0
VIN=0.8V
1000
800
600
0.7V
400
200
0.0
0.5
1.0
VDS (V)
1.5
2.0
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0
0
0.2
0.4
0.6
VDS (V)
0.8
1.0
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QW-R502-039,N
81CXXX/81NXXX
„
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-039,N
81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
„
81N29
30
300
25
20
Output Current, I OUT (uA)
Output Current, I OUT (mA)
Ta=25℃
VIN=2.0V
15
10
1.0V
5
0
0.5
2.0
1.0
1.5
VDS (V)
150
50
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
350
81N30
Ta=25℃
300
50
Output Current, I OUT (uA)
Output Current, I OUT (mA)
0.7V
100
Ta=25℃
40
30
V IN=2.0V
20
10
0
0.0
V IN=0.8V
200
2.5
81N30
60
Ta=25℃
250
0
0.0
81N29
1.0V
0.5 1.0
1.5
2.0
2.5
3.0
3.5
VDS (V)
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V IN=0.8V
250
200
150
0.7V
100
50
0
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
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QW-R502-039,N
81CXXX/81NXXX
CMOS IC
Output Current, I OUT (mA)
Output Current, I OUT (uA)
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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