UNISONIC TECHNOLOGIES CO., LTD UF3N30 Preliminary Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3N30L-TM3-R UF3N30G-TM3-R UF3N30L-TN3-R UF3N30G- TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-251 TO-252 S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 G G Pin Assignment 2 3 D S D S Packing Tape Reel Tape Reel 1 of 3 QW-R502-826.a UF3N30 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 300 V VGSS ±20 V Continuous ID 3 A Continuous Drain Current 12 A Pulsed IDM Avalanche Energy EAS 52 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=300V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=1.3A, IG=100µA, Gate to Source Charge QGS VGS=10V Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω, Rise Time tR VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=0.85A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 300 2 1 100 -100 V µA nA nA 4 2 V Ω 200 90 30 pF pF pF 4 0.64 1.6 10 50 30 40 nC nC nC ns ns ns ns 3 12 1.3 A A V 2 of 3 QW-R502-826.a UF3N30 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-826.a