UNISONIC TECHNOLOGIES CO., LTD UK3919 Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. FEATURES *Pb-free plating product number:UK3919L * RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UK3919-TN3-R UK3919L-TN3-R UK3919-TN3-T UK3919L-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 6 QW-R502-200.A UK3919 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±64 A Pulsed Drain Current (Note1) IDM ±256 A Single Avalanche Current (Note2) IAS 27 A Single Avalanche Energy (Note2) EAS 73 mJ Total Power Dissipation PD 36 W ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-Resistance SYMBOL TEST CONDITIONS IDSS IGSS VDS =25 V, VGS =0 V VDS =0 V, VGS =±20V VGS(OFF) VDS =10V, ID =1mA VGS =10 V, ID =32 A VGS =5.0 V, ID =16 A RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =10V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Gate to Source Charge QG VDD =20V, VGS =10 V,ID =64 A Gate Charge at Threshold QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD =12.5V, ID=32 A, VGS =10V, Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) RG =10 Ω Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Body Diode Forward Voltage VSD IF=64 A, VGS=0 V Reverse Recovery Time tRR IF= 64 A,VGS=0 V ,di/dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting TCH= 25℃, VDD = 12.5 V, RG = 25Ω, VGS = 20 → 0 V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 2.0 TYP 2.5 4.5 6.8 2050 460 330 42 8 15 16 19 53 22 0.97 23 11 MAX UNIT 10 ±100 µA nA 3.0 5.6 13.7 V mΩ pF nC ns V ns nC 2 of 6 QW-R502-200.A Forward Transfer Admittance Gate Cut-off Voltage,VGS(OFF) (V) Drain Current, ID (A) Drain Current, ID (A) Total Power Diaaipation,PD (W) Percentage of Rated Power,dT (％) UK3919 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS QW-R502-200.A 3 of 6 UK3919 TYPICAL CHARACTERISTICS(Cont.) 10 Drain to Source On-State Resistance vs. Channel Temperature Capacitance, C (pF) Gate-to-Source Voltage, VGS (V) Gate-to-Source Voltage, VGS (V) On-State Resistance,RDS(ON) (mΩ) On-State Resistance,RDS(ON) (mΩ) Power MOSFET Switching Characteristics 1000 8 6 100 VGS=10V td(off) td(on) 4 10 tf tr 2 VDD=12.5V VGS=10V RG=10V ID=32A Pulsed 0 -100 -50 0 50 100 150 Channel Temperature,TCH (℃) 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 0.1 1 10 Drain Current,ID (A) 100 4 of 6 QW-R502-200.A UK3919 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Source to Drain Diode Forward Voltage VGS=10V 100 10 0V 1 0.1 Pulsed 0.01 0 Single Avalanche Current,IAS (A) 100 10 120 IAS=27A EAS=73mJ VDD=12.5V RG=25Ω VGS=20 0V Starting TCH=25℃ 10 100 80 10 Diode Forward Current,IF (A) 100 Single Avalanche Energy Derating Factor VDD=12.5V RG=25Ω VGS=20 0V IAS≤27A 60 40 20 0 25 50 75 100 125 150 Starting Channel Temperature,Starting,TCH (℃) Drain Current, ID (A) 0.1 1 Inductive Load,L (mH) 100 1 Single Avalanche Current vs. Inductive Load 1 0.01 di/dt=100A/μs VGS=0V 1 0.5 1 1.5 Source to Drain Voltage,VF(S-D) (V) 10 Reverse Recovery Time VS.Diode Forward Current 1000 Reverse Recovery Time,tRR (ns) Diode Forward Current,IF (A) 1000 Energy Derating Factor, (％) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-200.A UK3919 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Transirnt Thermal Resistance vs. Pulse Width Transient Thermal Resistance, rth(t) (℃/W) 1000 Rth(ch-A)=125℃/W 100 10 Rth(ch-C)=3.47℃/W 1 0.1 0.01 100μ Single Pulse 1m 10m 100m 1 Pulse Width,PW (s) 10 100 1000 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-200.A