UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2306 is N-channel power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2306L-AE2-R UT2306G-AE2-R UT2306L-AE3-R UT2306G-AE3-R Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel MARKING 23F L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-130.D UT2306 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID 3.5 A Pulsed Drain Current (Note 1, 2) IDM 14 A Power Dissipation PD 0.83 W ℃ Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 150 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250μA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250μA VGS=10V, ID=3.5A VGS=5V, ID=2.8A 1 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V,VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, VGS=10V, ID=1A, RG=6Ω, RL=15Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge QG VDS=15V, VGS=10V, ID=3.5A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=1.25A Maximum Continuous Drain-Source Diode IS Forward Current Note:1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on FR4 board t≦10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 1.5 42 70 2 65 90 400 80 45 V μA nA V mΩ pF pF pF 10 8 19 6.2 12.5 2.4 1.3 19 15 35 12 16 ns ns ns ns nC nC nC 0.8 1.3 V 1.3 A 2 of 5 QW-R502-130.D UT2306 Drain Current,ID (A) TYPICAL CHARACTERISTICS Drain Current,ID (A) Power MOSFET Drain-Source On Resistance IDS=250μA 100 80 VGS=5V 60 VGS=10V 40 20 0 4 6 8 Drain Current,ID (A) 10 1.6 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.4 0 25 50 75 100 125 150 Junction Temperature,TJ (℃) 20 VGS=10V IDS=3.5A 1.4 1.2 Source-Drain Diode Forward Drain-Source On Resistance Source Current,IS (A) Normalized On Resistance 1.8 2 1.4 0.2 -50 -25 0 2.0 Gate Threshold Voltage 1.6 Normalized Threshold Voltage On-Resistance,RDS(ON) (mΩ) 120 10 TJ=150℃ TJ=25℃ RON@TJ=25℃:42mΩ 0.2 -50 -25 0 25 50 75 100 125 150 Junction Temperature,TJ (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 0.0 0.4 0.8 1.2 1.6 Source-Drain Voltage,VSD (V) 2.0 3 of 5 QW-R502-130.D UT2306 Drain Current,ID (A) TYPICAL CHARACTERISTICS(Cont.) Power,PTOT (W) Power MOSFET Capacitance 600 Gate Charge 10 Frequency=1MHZ 500 VDS=15V ID=3.5A 8 CISS 400 6 300 4 200 COSS 100 2 CRSS 0 0 0 5 10 15 20 25 Drain-Source Voltage,VDS (V) 30 2 4 6 8 10 12 14 Gate Charge,QG (nC) Safe Operation Area 50 0 2 Thermal Transient Impedance 1 it Duty=0.5 300μs R D S( O N ) Li m 10 0.1 1ms 1 10ms 100ms 0.1 TA=25℃ 0.01 0.01 1 0.1 10 Drain-Source Voltage,VDS (V) 1s DC 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.01 0.2 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in 2 pad RθJA: 150℃/W 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 of 5 QW-R502-130.D UT2306 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-130.D