UNISONIC TECHNOLOGIES CO., LTD UTD20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER M OSFET FEATURES * Ambient operating temperature: 175°C * Low drain-source and low on-resistance * Logic level * Perfect gate charge × RDS(ON) product * Superior thermal resistance * Avalanche rated * Specified dv/dt * For fast switching buck converters * Halogen free SYMBOL ORDERING INFORMATION Ordering Number Package UTD20N03G-TN3-R TO-252 www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 D 3 S Packing Tape Reel 1 of 3 QW-R502-342.A UTD20N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TC=25°C) ID 30 A Pulsed Drain Current (TC=25°C) IDM 120 A Single Pulsed (Note 2) EAS 15 mJ Avalanche Energy Repetitive (Note 3) EAR 6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6 kV/µs Power Dissipation (TC=25°C) PD 60 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. ID =15 A, VDD =25 V, RGS =25 Ω 3. Repetitive Rating: Pulse width limited by TJ 4. IS =30 A, VDS =24 V, di/dt =100A/µs,TJ(MAX) = 175 °C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP MAX 100 2.5 1.7 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =1 mA VDS =30 V,VGS =0 V VGS =20 V, VDS =0 V 30 VGS(TH) VDS =VGS, ID =25µA VGS =4.5 V, ID =15 A VGS =10 V, ID =15 A 1.2 DYNAMIC PARAMETERS Input Capacitance CISS VDS =25 V, VGS =0 V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD =15 V, VGS =10 V, ID =15 A, RG =12.7 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDD =15 V, ID =15 A,VGS =5V Gate Source Charge QGS VDD =15 V, ID =15 A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Inverse Diode Forward Voltage VSD IF =30 A, VGS =0 V Maximum Continuous Drain-Source Diode IS Forward Current TC =25°C Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VR =15 V,IF = IS, dI/dt =100A/µs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.01 1 1 100 V µA nA 1.6 22.9 15.5 2 31 20 V mΩ mΩ 530 200 60 1.3 700 275 90 pF pF pF Ω 6.2 11 23 18 8.4 2.5 6.4 9.3 17 34 27 11 3.1 9.6 ns ns ns ns nC nC nC 1.1 1.4 V 30 A 120 A 18 3 ns nC 15 2 2 of 3 QW-R502-342.A UTD20N03 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 0 10 20 30 40 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 10 10 VGS=10V ID=15A 8 6 VGS=4.5V ID=15A 4 0.5 1.0 1.5 2.0 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 12 2 Drain Current, ID (A) 12 Drain Current, ID (A) Drain Current vs. Gate Threshold Voltage 8 6 4 2 0 0 0 250 200 50 100 150 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-342.A