UNISONIC TECHNOLOGIES CO., LTD UTP45N02 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve SYMBOL *Pb-free plating product number: UTP45N02L 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UTP45N02-TN3-R UTP45N02L-TN3-R UTP45N02-TN3-T UTP45N02L-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 6 QW-R502-180.A UTP45N02 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Derate Above 25℃ RATINGS UNIT 20 V ±10 V 45 A 90 W PD W/℃ 0.606 ℃ Junction Temperature TJ +175 ℃ Storage Temperature TSTG -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL VDSS VGSS ID SYMBOL θJA θJC MIN TYP MAX 80 1.65 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS =0V, ID =250 µA 20 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS =0 V Gate-to-Source Leakage Current IGSS VGS = ±10 V ON CHARACTERISTICS Gate to Source Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1 Drain-to-Source On Resistance RDS(ON) VGS = 5V, ID =45 A DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Time tON Turn-ON Delay Time tD(ON) VGS =5 V, VDD =15 V, Turn-ON Rise Time tR ID≈45 A, RGS = 5Ω, Turn-OFF Delay Time tD(OFF) RL = 0.33Ω Turn-OFF Fall-Time tF Turn-OFF Time tOFF Total Gate Charge QG VGS=0V~10V VDD = 16V, Gate-Source Charge QGS VGS=0V ~ 5 V ID≈45A, Gate-Drain Charge QGD VGS=0V~ 1 V RL = 0.35Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=45 A Reverse Recovery Time tRR ISD = 45 A,dISD /dt = 100 A/µs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 ±100 V µA nA 2 0.022 V Ω 1300 724 250 pF 260 15 160 20 20 50 30 1.5 1.5 125 ns 60 60 36 1.8 nC V ns 2 of 5 QW-R502-180.A UTP45N02 Power MOSFET Drain to Source On Resistance,RDS(On) (mΩ) Normalized On Resistance Drain Current,ID (A) On-State Drain Current,ID(ON) (A) TYPICAL CHARACTERISTICS Normalized Power Dissipation vs Temperature Derating 50 1.0 Drain Current,ID (A) Power Dissipation Multiplier 1.2 0.8 0.6 0.4 Maximum Continuous Drain Current vs Case Temperature 40 30 20 10 0.2 0 0 25 50 75 100 125 150 Case Temperature,TC (℃) 175 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Case Temperature,TC (℃) 175 3 of 5 QW-R502-180.A UTP45N02 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Switching Time (ns) Avalanche Current,IAS (A) Normalized Drain to Source Breakdown Voltage 1.5 1.0 0.5 2500 -40 Capacitance vs. Drain to Source Voltage 20 Capacitance,C (pF) 2000 1500 CISS 1000 COSS 500 0 0 CRSS ID=250μA 1.5 1.0 0.5 -40 0 40 80 120 160 Junction Temperature,TJ (℃) Normalized Switching Waveforms for Constant Gate Current VDD=BVDSS 15 5 0 5 15 10 Drain to Source Voltage,VDS (V) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 20 G(REF) G(ACT) 5.00 VDD=BVDSS 3.75 RL=0.44Ω IG(REF)=0.5mA VGS=5V Plateau Voltage in Descending Order: VDD=BVDSS VDD=0.75BVDSS VDD=0.50BVDSS VDD=0.25BVDSS 10 200 2.50 1.25 G(REF) Time,t (μs) 80 G(ACT) Gate to Source Voltage,VGS (V) VGS=0V,f=1MHZ Normalized Drain to Source Breakdown Voltage vs Junction Temperature 0 -80 0 40 80 120 160 200 Junction Temperature,TJ (℃) Drain to Source Voltage,VDS (V) 0 -80 2.0 VGS=VDS,ID=250μA Normalized Gate Threhold Voltage 2.0 Normalized Gate Threshold Voltage vs Junction Temperature 0 4 of 5 QW-R502-180.A UTP45N02 Peak Current,IDM (A) TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Impedance,ZθJC Drain Current,ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-180.A