UTC-IC UTT15P06

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT15P06
Power MOSFET
15A, 60V P-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UTT15P06 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed, cost-effectiveness and minimum on-state resistance. It can
also withstand high energy in the avalanche.
„
FEATURES
* RDS(ON)=90mΩ VGS=-10V, ID=-15A
* High Switching Speed
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT15P06L-TN3-R
UTT15P06G-TN3-R
UTT15P06L-TN3-T
UTT15P06G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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QW-R502-733.a
UTT15P06
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±25
V
ID
-15
A
Continuous
TC=25°C
Drain Current
Pulsed
IDM
-45
A
Power Dissipation (Note 2)
PD
31.3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Steady state
Junction to Case
Notes: 1. Duty cycle≤1 %.
2. See SOA curve for voltage derating.
„
SYMBOL
θJA
θJC
RATINGS
62.5
4
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
Forward
VGS=+25V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=-10V, ID=-15A (Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
(Note 2)
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDS=-30V,
Gate to Source Charge
QGS
ID=-15A (Note 3)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-30V, ID=-1A, RG=12.5Ω
(Note 3)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IF=-15A, VGS=0V (Note 1)
Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-60
-1
-1
+100
-100
V
µA
nA
nA
-3
90
V
mΩ
1100 2660
115
90
14
3
8
16
30
50
20
-1.0
pF
pF
pF
27
nC
nC
nC
ns
ns
ns
ns
-15
-45
-1.5
A
A
V
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UTT15P06
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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