austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 (0) 3136 500 0 e-Mail: [email protected] Please visit our website at www.ams.com Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features al id Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3% (in circuit One Time Programmable - OTP) A build in 5V charge-pump guaranties constant IGBT drive at any battery voltage. The build in timer turns off the charge-pump 20 seconds after charging. Trip voltage accuracy ±1.5% PCB: No microvias need lv Small Size 1.5mm x 1.5mm x 0.6mm In circuit fuse trimming allows to set the voltage on the photoflash capacitor to ±3% accuracy. Average input current < 320mA Few external components - No Schottky-Diode needed - No output voltage divider needed am lc s on A te G nt st il The AS3635 is available in a space-saving WL-CSP package measuring only 1.5mm x 1.5mm and operates over the -30ºC to +85ºC temperature range. Reliable Flash on/off for IGBT timing. Charge time < 4sec @ Vbat>2.7V, CFLASH =22µF Charge complete indicator Undervoltage lockout Available in a tiny WL-CSP Package 3x3 balls 0.5mm pitch, 1.5x1.5mm package size Warning: Lethal voltages are present on applications using AS3635! Do not operate without training to handle high voltages. 3 Applications Figure 1. Typical Operating Circuit Xenon Flash driver for mobile phones, PDA and DSC #$%& !$)#-. $ $ #$%& !" ni '(& %% 45 ca $ ,6 Te ch !$)# #$%& , !$)# 67. )/ 18*1 +2+ % .. % !$)# &('( *1"2 3 ( 0$& *+, ( AS3635 www.austriamicrosystems.com/AS3635 (ptr) 1.4-8 1 - 20 AS3635 Datasheet - P i n o u t 4 Pinout Pin Assignment Figure 2. Pin Assignments (Top Through View) 4" 3" '5 3" !"#"$%#&'( )""""*+ !"%%* ",!""-". # ""/0"0"!"*+") ** AS3635 Pin Description 1 "20* " am lc s on A te G nt st il 0" 6#", lv al id Table 1. Pin Description for AS3635 Pin Number Pin Name A1 SW A2 VBAT A3 V5V CHARGE B2 PGND C2 FLASH GND DONE Positive supply voltage input 5V charge pump output Digital input pin, active high - enables charging of photoflash capacitor Power ground - connect to ground (GND) IGBT gate control - internally level shifted to 5V (from pin V5V) Digital input pin, active high - Enables flash (level shifted to IGBT_GATE) Signal ground - connect to ground (GND) Digital open drain output, active low - indicates end of charging Te ch C3 IGBT_GATE ni B3 C1 Xenon DCDC converter switching node ca B1 Description www.austriamicrosystems.com/AS3635 1.4-8 2 - 20 AS3635 Datasheet - A b s o l u t e M a x i m u m R a t i n g s 5 Absolute Maximum Ratings Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Table 3, “Electrical Characteristics,” on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Units VBAT, V5V to GND -0.3 +7.0 V CHARGE, DONE, FLASH to GND -0.3 VBAT + 0.3 V IGBT_GATE to GND -0.3 V5V + 0.3 V SW to PGND -0.3 +55.0 V PGND to GND 0.0 0.0 V Comments al id Max maximum 7.0V lv Min Connect PGND to GND directly below the pad (short connection recommended) am lc s on A te G nt st il Parameter +100 +IIN mA Norm: EIA/JESD78 0.76 W PT ±15000 V Air Discharge to module; IEC 61000 -4 -2 test bench ±8000 V Contact Test to module; IEC 61000 -4 -2 test bench ESD HBM pins SW, IGBT_GATE, PGND, V5V ±2000 V Norm: MIL 883 E Method 3015 ESD CDM ±500 V Norm: JEDEC JESD 22-C101C ESD MM ±100 V Norm: JEDEC JESD 22-A115-A level A Input Pin Current without causing latchup -100 Continuous Power Dissipation (TA = +70ºC) Continuous power dissipation 1 Electrostatic Discharge 2 ESD pins VBAT, CHARGE, DONE, FLASH Temperature Ranges and Storage Conditions Storage Temperature Range -55 +125 ºC Humidity 5 85 % Non condensing +260 ºC according to IPC/JEDEC J-STD-020 ca Body Temperature during Soldering Moisture Sensitivity Level (MSL) Represents a max. floor life time of unlimited MSL 1 Te ch ni 1. Depending on actual PCB layout and PCB used 2. Assembled on PCB board (requires capacitor CVBAT); special PCB layout (spark gaps) and external resistors required; system test for completed module (fully capsuled), no permanent interruption of operation www.austriamicrosystems.com/AS3635 1.4-8 3 - 20 AS3635 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics VVBAT = +2.51V to +5.5V, TAMB = -30ºC to +85ºC, unless otherwise specified. Typical values are at VVBAT = +3.6V, TAMB = +25ºC, unless otherwise specified. Table 3. Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit 1 VVBAT Supply Voltage 2.51 3.6 TAMB Operating Temperature -30 25 ISHUTDOWN Shutdown Current CHARGE = 0, charge pump OFF, FLASH = 0 TAMB<50ºC; VVBAT<3.7V VUVLO Undervoltage Lockout Measured on pin VBAT 2.3 V 85 ºC 1.0 µA 2.5 V 32.9 am lc s on A te G nt st il V 35.8 V 50 V 1.05 A VFLASH Capacitor Charger VTRIP Comparator trip voltage V(SW) - V(VBAT) in circuit adjustable with OTP. TAMB = 0°C to 50°C; only if VTRIP is trimmed by austriamicrosystems 31.9 VTRIPRANGE Programming range of VTRIP 5 bit programming 32.4V -11.2%/+10.5%; measured on pin SW Allows in-circuit trimming of the final charged voltage VFLASH on capacitor CFLASH 29.6 VSW Maximum voltage on pin SW ISW Switching current limit RSW Switch on resistance tEOC_DET 5.5 lv 0.5 al id General Operating Conditions 0.75 Internal transistor between SW and PGND 32.4 0.9 0.4 end of charge comparator trigger time - see Internal Circuit on page 8 128 138 148 5.25 > VVBAT > 2.7V 4.75 5.0 5.25 2.7V > VVBAT > 2.51V 4.3 Ω ns Charge Pump Parameters 5V Charge pump output voltage ICHRG_PUMP Charge Pump Operating Current fCLK Operating frequency CHARGE= 0->1->0 (20 seconds timer 2 running ), charge pump ON includes 48µA for internal biasing and oscillator ca VV5V 5.25 V 163 µA 2.0 MHz IGBT Control - See IGBT Driver on page 13 IGBT control voltage fall time RIGBT_ON IGBT switching on resistance TAMB=-30ºC to 85ºC IIGBT_SINK IGBT Sink Current VIGBT_GATE below 2.3V; TAMB=-30ºC to 85ºC IIGBT_BOOST IGBT Boost Current Te 0.171 0.214 0.256 µs 0.42 0.525 0.63 µs AS3635B 30 50 60 Ω AS3635E 5 15 20 Ω AS3635B 10 15 20 mA AS3635E 52 60 70 mA 40 46 53 mA Pin IGBT_GATE, rise/falltime 10% - 90%, V5V=5V, TAMB=25ºC, VIN=3.7V, AS3635E, load: 6.5nF (capacitor) ch IBGTFALL IGBT control voltage rise time ni IBGTRISE VIGBT_GATE above 2.3V; TAMB=-30ºC to 85ºC Digital Interface www.austriamicrosystems.com/AS3635 1.4-8 4 - 20 AS3635 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s Table 3. Electrical Characteristics (Continued) Parameter Condition Min VIH High Level Input Voltage Pins CHARGE, FLASH; 1.26 VIL Low Level Input Voltage pin DONE in trimmode 0.0 VOL Low Level Output Voltage Pin DONE, ILOAD=4mA ILEAK Leakage current Pin DONE RPD Pulldown resistance to 3 GND Pins CHARGE, FLASH Typ Max Unit V -1 52 0.54 V 0.2 V +1 µA al id Symbol kΩ lv Recommended Transformer parameters - see Table 4, “Recommended Transformers,” on page 15 LPRIMARY Primary Inductance LLEAK Primary Leakage Inductance N Turns Ratio VISOLATION Isolation Voltage 500 V ISATURATION Primary Saturation Current 0.84 A RPRIMARY Primary Winding Resistance 0.4 Ω RSECUNDAR Secondary Winding Resistance 60 Ω µH 0.4 am lc s on A te G nt st il Y 6 for VFLASH=320V (final charged voltage on CFLASH) µH 10.2 Te ch ni ca 1. Minimum VVBAT is set to 2.51V to allow a little margin to maximum VUVLO undervoltage lockout of 2.5V. 2. Setting CHARGE=1 resets the timeout timer. Additionally the timeout timer is automatically stopped at power on reset and once it has expired. 3. Measured with VBAT=3.7V, CHARGE or FLASH = 1.26V www.austriamicrosystems.com/AS3635 1.4-8 5 - 20 AS3635 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 7 Typical Operating Characteristics VBAT = 3.6V, TA = +25ºC (unless otherwise specified). CFLASH=22µF, TCHARGE Transformer = TTRN-3822, QIGBT=RJP4002ANS, ISW=750mA. Figure 3. Charging Waveform Figure 4. Charging Time vs. VBAT 4.0 3.4 3.2 3.0 lv 50mA/ Charging Time (s) 50V/Div 3.6 VFLASH 2.8 2.6 2.4 am lc s on A te G nt st il IBAT al id 3.8 VFLASH drop due to load of measurement 2.2 2.0 2.4 500ms/Div ch 70 Efficiency (%) 60 Note: Efficiency is mostly defined by external components used and transformer TTRN-3822 is optimized for size Te Efficiency (%) 50V/Div VFLASH IBAT 80 50 30 50mA/ 50V/Div ca 50mA/ VFLASH ni Figure 8. Efficiency vs. Charging Time 60 40 4.0 500ms/Div Figure 7. Efficiency vs. VFLASH 70 3.6 Figure 6. Charging Waveform VBAT=4.2V 500ms/Div 80 3.2 VBAT (V) Figure 5. Charging Waveform VBAT=2.51V IBAT 2.8 20 40 30 20 VBAT=3.6V VBAT=2.7V VBAT=4.2V 10 50 VBAT=3.6V VBAT=2.7V VBAT=4.2V 10 0 0 0 50 100 150 200 250 300 350 0.0 Voltage on CFLASH (V) www.austriamicrosystems.com/AS3635 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Charging Time (s) 1.4-8 6 - 20 AS3635 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 9. End of charge Voltage vs. VBAT Figure 10. IGBT_GATE driving waveform 327 FLASH Tamb = -25C Tamb = +85C Tamb = +25C 325 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 1µs/Div am lc s on A te G nt st il VBAT (V) Figure 11. SW switching waveform Figure 12. SW switching waveform VSW VSW Transformer: TTRN-3825 10V/Div Transformer: TTRN-3822 50ns/Div ca 50ns/Div Figure 13. V5V vs. VBAT (V5V CP on) Figure 14. Battery current vs. VBAT (V5V CP on) 300 ch 5.1 Battery Current IBAT (uA) ni 5.2 Te 5.0 4.9 IV5V = 10uA IV5V = no load 4.8 2.5 3.0 10V/Div 2.5 V5V (V) 1V/Div 326 al id IGBT_GATE lv End of Charge Voltage (V) 328 3.5 4.0 4.5 250 200 150 100 50 IV5V = 10uA IV5V = no load 0 2.5 Input Voltage (V) www.austriamicrosystems.com/AS3635 3.0 3.5 4.0 4.5 Input Voltage (V) 1.4-8 7 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n 8 Detailed Description The AS3635 is a photoflash capacitor charger and an integrated IGBT driver for a Xenon flash. The capacitor charger charges VFLASH to the final charging voltage (e.g. 320V) and the IGBT driver starts the actual Xenon flash. Additionally a charge pump is included to generate a stable 5V supply for accurate control of the IGBT on/off timings independent of the battery supply. al id The final charged voltage (VFLASH) can be in-field trimmed to e.g. 320V with the integrated OTP (one time programmable) memory (see section Trimming Procedure on page 12). VFLASH can be exactly trimmed to the maximum allowed output voltage resulting in an improved use of the available energy in the photoflash capacitor. lv Note: The AS3635 uses a WL-CSP (wafer level chip scale package) to optimize the PCB area required and minimize the module size. Therefore the actual DIE is visible (and it is not molded in plastic as for other packages like QFN or DFN) and the AS3635 is sensitive to external light. It has to be protected from direct light from the Xenon tube. Internal Circuit am lc s on A te G nt st il Figure 15. Internal circuit ','#5 0# 12 + "3 &#+6 ) #/ - . ++ # ' +"' 4 5 )*!+ % !!" +"',, &% 4 5 ca &' & ( " # & ( ch ni AS3635 !" #$ Te AS3635 Operation The AS3635 allows charging and refresh cycles under complete software control. Two typical configurations are shown in Figure 16 and Figure 17: Figure 16 shows a configuration without any refresh between the pre-flash and the actual flash. Typically this is used for applications where no noise at all should be generated on the battery when the camera is performing e.g. white color balancing (between pre-flash and flash cycle). www.austriamicrosystems.com/AS3635 1.4-8 8 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n Figure 16. AS3635 Charging Cycle without recharging between Pre-Flash and Flash & $ $% $ $% al id '!(# *+ lv ) ) !" am lc s on A te G nt st il # # Te ch ni ca , --. www.austriamicrosystems.com/AS3635 1.4-8 9 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n Figure 17 shows a configuration with continuous refresh of the voltage on the photoflash capacitor (VFLASH). Typically this is used in application where the maximum flash energy should be used. Figure 17. AS3635 Charging Cycle with continuous recharging al id '(%%) ! lv *+ , ! + . ! !" !" am lc s on A te G nt st il #$%& *+ Te ch ni ca (/'%$$#) www.austriamicrosystems.com/AS3635 1.4-8 10 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n A typical charging cycle and its voltages and current on the different pins and signals are shown in Figure 18: Figure 18. AS3635 Charging Cycle Details % , ( ' * lv ) am lc s on A te G nt st il #$ # & + al id !! " " %- The input CHARGE is set to high and charging begins (1). During a single cycle, the internal NMOS transistor connects the pin SW to PGND (2). Therefore the current ISW rises (3) until it reaches ISW current limit (4). Then the energy is transferred to the secondary side of the transformer and the voltage VCFLASH on the flash capacitor CFLASH rises (5). The output voltage VCFLASH gradually increases and once it hits the end of charge detection threshold (6) (detected on 1 ca VSW during the off time of the NMOS transistor between SW and PGND) 8 times (7) , DONE is pulled low (8). When CHARGE is set to low afterwards (9), DONE returns to high (10) finishing a full charging cycle. Te ch ni Note: For simplicity the number of actual charging cycles (NMOS SW on/off) are reduced in Figure 18. 1. The 8 cycles required for actual detection of the end of charge conditions are not shown in Figure 18. www.austriamicrosystems.com/AS3635 1.4-8 11 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n Trimming Procedure The final charging voltage on VFLASH can be trimmed in-circuit to cancel inaccuracies of VFLASH due to the transformer and diode. The trimming procedure is performed as follows: 2 al id Figure 19. AS3635 trimming circuit %&#./ AS3635 1. 2. 3. 4. 5. ) )* ' " #$ '+ , $-+ am lc s on A te G nt st il 0"1 ( lv $ ! " %&# ! The production test equipment starts a charging cycle (CHARGE=1) and waits until DONE=0 The voltage on VFLASH is measured and a correction code is calculated The trimmode control is unlocked using a special sequence The one time programmable memory (OTP) is programmed with the above calculated code The trimmode control can be disabled by fusing the OTP bit trimm_lock Te ch ni ca See austriamicrosystems application note ‘AN3635_In-Production_Trimming’ for a detailed description of the trimming setup and the trimming procedure. 2. The internal voltages (e.g. +3.4V/-2.8V/32.4V) are internally scaled to fit in the supply voltage range www.austriamicrosystems.com/AS3635 1.4-8 12 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n IGBT Driver The internal circuit of the IGBT driver is shown in Figure 20: Figure 20. IGBT Driver circuit al id !"#$%&'() AS3635 lv am lc s on A te G nt st il * +#,-./01")2#++ 793 0"#./34)4++)56)4) The IGBT driver is enable once the charge pump is switched on and the voltage on pin V5V has reached 4V (to guarantee at least 4V driving signal for the IGBT). 3 Te ch ni ca The IGBT driver includes all required resistors and pulldowns to operate the IGBT without any external circuitry . Do not add any external pulldown resistor on pin IGBT_GATE. 3. Exception: If the Sanyo IGBT TIG058E8 is used, add a series resistor of 50Ω for the gate drive. For Renesas RJP4006AGE add a series resistor of 68Ω. www.austriamicrosystems.com/AS3635 1.4-8 13 - 20 AS3635 Datasheet - D e t a i l e d D e s c r i p t i o n ESD Protection Diodes 4 The internal ESD diodes are shown in Figure 21 - do not operate ESD diodes in forward direction : Figure 21. ESD Diodes "#! # +! am lc s on A te G nt st il $% %* lv ! al id AS3635 &'() Te ch ni ca # 4. Exception: The diode between SW and PGND is designed to be operated in forward direction for very short pulses during charging. www.austriamicrosystems.com/AS3635 1.4-8 14 - 20 AS3635 Datasheet - A p p l i c a t i o n I n f o r m a t i o n 9 Application Information External Components Transformers TCHARGE and TTRIG Table 4. Recommended Transformers TTRIG N L Size (mm) Manufacturer C3-T2.5R 10.2 6.7µH 3.4x3.4x2.5 Mitsumi Electric www.mitsumi.co.jp TTRN-3825H 10.2 7µH 3.8x3.8x2.5 TTRN-3822H 10.2 7µH 3.8x3.8x2.2 TTRN-5820H 10.2 8.87µH 5.8x5.8x2.0 TTRN-0520H 10.41 8.35µH 5.0x5.0x2.0 LDT4520T-01 10.2 10µH 4.7x4.5x2.0 ATB322515 10.2 7µH 3.2x2.5x1.55 (H is max) Tokyo Coil www.tokyo-coil.co.jp am lc s on A te G nt st il TCHARGE Part Number lv Component al id Following transformers are recommend for the AS3635 (due to the OTP programming features see section Trimming Procedure on page 12, the output voltage VFLASH can be programmed): BO-02 7.3x2.5(3.5)x2.2 TDK www.tdk.com Tokyo Coil www.tokyo-coil.co.jp Always check if the voltage on the pin SW does never exceed the AS3635 maximum VSW (see Table 3 on page 4) specification during charging. IGBT As the AS3635 has an internal charge pump included, 2.5V, 2.7V and 4V IGBT can be used without limit on the supply VVBAT. The IGBT is used for two purposes: ca 1. Powering of the Xenon tube and generating together with the oscillation circuit consisting of TTRIG, CTRIG, RTRIG a sufficiently high trigger pulse to ignite the Xenon tube (about 3.5kV) - this is accomplished by a fast rising edge of the gate of the IGBT 2. Switching off the current through the Xenon tube at the end of the flash pulse to accurately control the light emitted by the flash. To protect the IGBT the switching off falling edge voltage should be less than 400V/µs (measured on the emitter of the IGBT) Both requirements are achieved with the internal driving circuit of the AS3635. Internal OTP trimming allows to adopt to different trigger coils and IGBTs. ni Table 5. Recommended IGBTs ch Component Te QIGBT Part Number min. Drive Voltage Size RJP4002ANS 2.5V RJP4003ANS 4.0V VSON-8 3 x 4.8mm Manufacturer Renesas www.renesas.com 2.7V 2.85x3.05x1.1 mm (H is max.) GT8G133 4.0V TSSOP-8 3.3 x 6.4mm Toshiba www.semicon.toshiba.co.jp 2 4.0V ECH8 2.8 x 2.9mm Sanyo www.sanyo.com 1 RJP4006AGE TIG058E8 1. Add a series resistor of 68Ω in the gate drive. 2. Add a series resistor of 47Ω in the gate drive. www.austriamicrosystems.com/AS3635 1.4-8 15 - 20 AS3635 Datasheet - A p p l i c a t i o n I n f o r m a t i o n Photoflash Capacitor CFLASH The photoflash capacitor stores the energy for the flash. Its capacitance define the maximum available energy. Using higher value capacitors as shown in Table 6 is possible, but will increase the charging time. It is recommended to use low ESR capacitors to avoid loosing power during flash (it is also possible to connect two capacitors in parallel to reduce ESR): Table 6. Recommended Photoflash Capacitors Part Number Capacitor CFLASH 330FW13A6.3X20 2x13.5µF 1 Voltage rating Size Manufacturer 330V Cylinder 2 x l=24mm, d=7mm Rubycon www.rubycon.co.jp al id Component lv 1. Different capacitor values are possible to be used together with the AS3635. Lower capacitor value will reduce charging time, lower ESR capacitor will improve light output energy and reduce losses in the capacitor during the flash pulse. am lc s on A te G nt st il Photoflash Charger rectification diode DCHARGE 5 The rectification diode should have very low parasitic capacitance and has to withstand the operating current and reverse voltages. Table 7. Recommended Rectification Diodes Component DCHARGE Part Number Parasitic Capacitor Voltage rating Size Manufacturer FVO2R80 5pF 800V 1.25x2.5mm Origin www.origin.co.jp GSD2004S 5pF / 2 2x240V SOT-23 2.4x3.0mm Vishay www.vishay.com BAS21 5pF / 2 2x250V SC-70 2.0x2.1mm OnSemi www.onsemi.com Supply Capacitor CVBAT and charge pump capacitor CV5V Low ESR capacitors should be used to minimize VBAT ripple. Multi-layer ceramic capacitors are recommended since they have extremely low ESR and are available in small footprints. The capacitor should be located as close to the device as possible. ca X5R dielectric material is recommended due to their ability to maintain capacitance over wide voltage and temperature range. Table 8. Recommended CVBAT and CV5V Capacitor C TC Code Rated Voltage Size GRM155R60J474 470nF X5R 6.3V 0402 ni Part Number ch Component GRM155R60J105 GRM155R61A105 1µF X5R 6.3V 10V 0402 CVBAT GRM188R60J475 4.7µF X5R 6.3V 0603 Murata www.murata.com Te CV5V Manufacturer If a different output capacitor is chosen, ensure low ESR values and voltage ratings. 5. A low parasitic capacitance improves charging efficiency. www.austriamicrosystems.com/AS3635 1.4-8 16 - 20 AS3635 Datasheet - A p p l i c a t i o n I n f o r m a t i o n PCB Layout Guideline Following layout recommendations apply: al id 1. Keep the path (and area) of GND - CVBAT - VBAT - TCHARGE(primary) - SW - GND as short as possible to minimize the leakage inductance of TCHARGE and ensure a proper supply connection for the AS3635 2. Place CVBAT as close as possible to the AS3635. 3. Ensure wide and short PCB paths for the path GND - CFLASH - XFLASH - QIGBT - GND to allow 150A to flow during the flash pulse. Connect this GND only at a single place to the main GND plane. 4. The IGBT has two ground connections: One ground for the driving input and one ground for the power path. 5. Ensure larger spacings for all high voltage paths; check with the PCB manufacturer to ensure proper minimum spacing for 320V paths and 4kV (Xenon tube trigger pin) paths. Te ch ni ca am lc s on A te G nt st il See austriamicrosystems demoboard layout (described in application note ‘AN3635’). lv 6. Minimize the parasitic capacitance of the PCB on the anode of DCHARGE especially to GND and VFLASH 7. See austriamicrosystems “WLP-CSP-Handling-Guidelines_1V0.pdf” for proper handling, PCB layout and soldering of the WL-CSP AS3635 device. www.austriamicrosystems.com/AS3635 1.4-8 17 - 20 AS3635 Datasheet - P a c k a g e D r a w i n g s a n d M a r k i n g s 10 Package Drawings and Markings Figure 22. 9 pin WL-CSP 1.5x1.5mm Marking 3635 <Code> lv Note: austriamicrosystems logo 3635 and version code (e.g. ‘A’ or ‘B’) <Code> Encoded Datecode (4 characters) am lc s on A te G nt st il " ) ) )" " ) ) )" " Te ch ni % % ( %" %" "" % " ! % ca #$% &$' Figure 23. 9 pin WL-CSP 1.5x1.5mm Package Dimensions Line 1: Line 2: Line 3: al id www.austriamicrosystems.com/AS3635 1.4-8 18 - 20 AS3635 Datasheet - O r d e r i n g I n f o r m a t i o n 11 Ordering Information The devices are available as the standard products shown in Table 9. Table 9. Ordering Information Order Code Marking Description Delivery Form Package Tape & Reel 9-pin WL-CSP (1.5mm x 1.5mm) RoHS compliant / Green / Pb-Free AS3635BZWLT 3635B ISW (charging current peak) = 900mA RIGBT_ON = 50Ω IIGBT_SINK = 15mA IIGBT_BOOST = 46mA VTRIP trimmed by customer AS3635EZWLT Tape & Reel 9-pin WL-CSP (1.5mm x 1.5mm) RoHS compliant / Green / Pb-Free am lc s on A te G nt st il 3635E ISW (charging current peak) = 900mA RIGBT_ON = 15Ω IIGBT_SINK = 60mA IIGBT_BOOST = 46mA VTRIP trimmed by customer lv Xenon Flash Driver with 5V IGBT Control al id Xenon Flash Driver with 5V IGBT Control Note: All products are RoHS compliant and austriamicrosystems green. Buy our products or get free samples online at ICdirect: http://www.austriamicrosystems.com/ICdirect Technical support is found at http://www.austriamicrosystems.com/Technical-Support For further information and requests, please contact us mailto:[email protected] or find your local distributor at http://www.austriamicrosystems.com/distributor Note: AS3635-ZWLT Te ch ni ca AS3635B, E Version Code - see Table 9 - ‘Description’ Z Temperature Range: -30ºC - 85ºC WL Package: Wafer Level Chip Scale Package (WL-CSP) 1.5x1.5mm T Delivery Form: Tape & Reel www.austriamicrosystems.com/AS3635 1.4-8 19 - 20 AS3635 Datasheet - O r d e r i n g I n f o r m a t i o n Copyrights Copyright © 1997-2011, austriamicrosystems AG, Schloss Premstaetten, 8141 Unterpremstaetten, Austria-Europe. Trademarks Registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. al id All products and companies mentioned are trademarks or registered trademarks of their respective companies. Disclaimer am lc s on A te G nt st il lv Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or lifesustaining equipment are specifically not recommended without additional processing by austriamicrosystems AG for each application. For shipments of less than 100 parts the manufacturing flow might show deviations from the standard production flow, such as test flow or test location. ca The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However, austriamicrosystems AG shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. 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