CEDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8004 is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage. MARKING CODE: V SOT-883L CASE • Devices are Halogen Free by design APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices MAXIMUM RATING: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature FEATURES: • ESD protection up to 2kV • Low rDS(on) • Low threshold voltage • Logic level compatible • Small, TLP™ 1x0.6mm, SOT-883L, ultra low profile 0.4mm leadless surface mount package • Complimentary N-Channel MOSFET CEDM7004 SYMBOL VDS VGS ID PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=100μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=100mA rDS(ON) VGS=4.5V, ID=430mA rDS(ON) VGS=2.5V, ID=200mA rDS(ON) VGS=1.8V, ID=100mA gFS VDS =10V, ID=100mA Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A Qgs VDS=10V, VGS=4.5V, ID=1.0A Qgd VDS=10V, VGS=4.5V, ID=1.0A 30 8.0 450 100 UNITS V V mA mW -65 to +150 °C otherwise noted) MIN TYP 30 0.5 MAX 3.0 1.0 1.0 1.6 2.6 1.0 1.1 1.1 2.0 3.3 8.9 45 8.5 10 55 15 200 0.88 0.35 0.128 UNITS μA μA V V V Ω Ω Ω mS pF pF pF nC nC nC R4 (1-November 2012) CEDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: V R4 (1-November 2012) w w w. c e n t r a l s e m i . c o m