CENTRAL CMDD2004_11

CMDD2004
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
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DESCRIPTION:
The Central Semiconductor CMDD2004 is a high
voltage silicon switching diode manufactured by
the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
applications requiring high voltage capability.
MARKING CODE: C24
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
250
UNITS
V
300
V
IO
IF
200
mA
225
mA
IFRM
IFSM
625
mA
4.0
A
IFSM
PD
1.0
A
250
mW
-65 to +175
°C
600
°C/W
MAX
100
UNIT
nA
100
μA
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
VR=240V
IR
VR=240V, TA=150°C
BVR
IR=100μA
300
VF
IF=100mA
1.0
V
V
CT
VR=0, f=1.0MHz
5.0
pF
trr
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
ns
R6 (24-June 2011)
CMDD2004
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: C24
R6 (24-June 2011)
w w w. c e n t r a l s e m i . c o m