RY A IN CQ89D IM L RE Central CQ89M CQ89N P TM Semiconductor Corp. 1.0 AMP TRIAC 400 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) Peak One Cycle Surge (tp=10 ms) IT (RMS) ITSM Peak Gate Current IGM Average Gate Power Dissipation PG (AV) Tstg Junction Temperature TJ E R P ΘJC IN ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IH VGT VGT VTM dv/dt CQ89M CQ89N UNITS 600 800 V Y AR 400 M I L Storage Temperature Thermal Reistance CQ89D 1.0 A 10 A 1.0 A 0.1 W -40 to +150 °C -40 to +125 °C 10 °C/W TYP MAX UNITS 10 µA VD=Rated VDRM VD=Rated VDRM, TC=125°C 200 µA VD=12V, QUAD I, II, III, IV 10 mA VD=12V 10 mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV 2.0 V IT=1.0A VD=2/3 VDRM, TC=125°C 5.0 2.5 V 2.0 V V/µs R4 (10-June 2004) Central RY Semiconductor Corp. INA IM TM L RE P CQ89D CQ89M CQ89N 1.0 AMP TRIAC 400 THRU 800 VOLTS SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) MT2 3) MT1 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.055 0.067 1.40 1.70 B 4° 4° C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70 4.50 G 0.090 0.106 2.29 2.70 H 0.028 0.051 0.70 1.30 J 0.014 0.019 0.36 0.48 K 0.017 0.023 0.44 0.58 L 0.059 1.50 M 0.118 3.00 SOT-89 (REV: R4) R4 (10-June 2004)