< HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage High Insulated Gate Bipolar Transistor) Modules CM1500HG-66R IC ································································ 1500A VCES ·························································· 3300V 1-element in a Pack High Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM December 2012 HVM-1059-A Dimensions in mm 1 < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V, Tj = -40…+150°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 90°C Pulse (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 3300 3200 ± 20 1500 3000 1500 3000 14700 10200 5100 −50 ~ +150 −50 ~ +150 −55 ~ +150 10 VCC = 2500V, VCE ≤ VCES, VGE =15V, Tj =150°C Unit V V A A A A W V V °C °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 150 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) December 2012 (HVM-1059-A) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 1800V, IC = 1500A, VGE = ±15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C IC = 1500 A (Note 4) VGE = 15 V VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6 Ω Ls = 100 nH Inductive load VCC = 1800 V IC = 1500 A VGE = ±15 V RG(off) = 5.6 Ω Ls = 100 nH Inductive load 2 Min — — — 5.7 −0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 36.0 6.2 — 210.0 13.0 6.0 16.0 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 2.10 2.75 3.00 2.20 2.90 3.20 2.70 2.80 2.85 0.30 0.35 0.40 2.00 2.45 2.50 2.20 2.70 2.80 Max 6.0 — — 6.7 0.5 — — — — — 3.70 — — 1.25 1.25 — 0.50 0.50 — — — — — — — 3.30 3.30 — 1.00 1.00 — — — — — — Unit mA V µA nF nF nF µC V µs µs J J µs µs J J < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item VEC Emitter-collector voltage trr Reverse recovery time Conditions (Note 2) (Note 2) Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Erec(10%) Erec Reverse recovery energy Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C IE = 1500 A (Note 4) VGE = 0 V (Note 2) VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6 Ω Ls = 100 nH Inductive load (Note 5) Reverse recovery energy (Note 2) (Note 6) — — Limits Typ 2.15 2.30 2.25 0.50 0.70 0.80 1250 1500 1550 1050 1700 2000 1.05 1.75 2.00 1.20 2.00 2.30 Min — — — Limits Typ — — 6.0 Max 8.5 15.5 — Min 7.0 3.0 1.0 — 600 26.0 56.0 — — — Limits Typ — — — 1.4 — — — 15.0 0.18 1.5 Max 22.0 6.0 3.0 — — — — — — — Min — — — — — — — — — — — — — — Max — 2.80 — — Unit V µs — — — — — A µC — — J — — J — THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to heat sink, grease = 1W/m·k, D(c-s) = 100m Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C TC = 25°C Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating(150°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 (HVM-1059-A) 3 Unit N·m N·m N·m kg — mm mm nH mΩ Ω < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 3000 3000 Tj = 1 50°C 2500 VGE = 1 9V VG E = 11 V VGE = 1 5V 2000 VGE = 13 V 1500 1000 VGE = 9V Coll ector Current [A] Coll ector Current [A] 2500 VCE = VGE 2000 1500 1000 Tj = 2 5° C Tj = 1 50 °C 500 500 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 2 4 6 8 10 12 Gate - Emi tter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3000 3000 VGE = 15 V 2500 Tj = 125°C Tj = 25 °C 2000 Tj = 1 25°C 1500 Tj = 1 50° C 1000 Emitter Current [A] Coll ector Current [A] 2500 Tj = 150°C Tj = 25°C 2000 1500 1000 500 500 0 0 0 1 2 3 4 0 5 Collector-Emitter Saturation Voltage [V] December 2012 (HVM-1059-A) 1 2 3 4 Emitter-Collector Voltage [V] 4 5 < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 15 Gate-Emitter Voltage [V] Capacitance [nF] Cies 100 Coes 10 VCE = 18 00V, IC = 1 500 A Tj = 2 5° C Cres 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 1 -15 0.1 1 10 100 0 5 Collector-Emitter Voltage [V] 15 20 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 8 VCC = 18 00 V, VGE = ± 15V RG(on) = 1.6Ω, RG( off) = 5 .6 Ω LS = 1 00n H, Tj = 1 25°C In ductive loa d VCC = 18 00 V, VGE = ± 15V RG(on) = 1.6Ω, RG( off) = 5 .6 Ω LS = 1 00n H, Tj = 1 50°C In ductive loa d 7 6 Eo n 5 4 Eoff 3 2 Ere c 1 Switching Energies [J/pulse] 7 Switching Energies [J/pulse] 10 Eon 6 5 4 Eoff 3 2 Ere c 1 0 0 0 500 1000 1500 2000 2500 3000 0 Collector Current [A] December 2012 (HVM-1059-A) 500 1000 1500 2000 Collector Current [A] 5 2500 3000 < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 8 VCC = 180 0V, I C = 15 00A VGE = ±15 V, LS = 10 0nH Tj = 12 5°C, Indu cti ve lo ad VCC = 180 0V, I C = 15 00A VGE = ±15 V, LS = 10 0nH Tj = 15 0°C, Indu cti ve lo ad 7 6 Eon 5 4 Eoff 3 2 Ere c Switching Energies [J/pulse] Switching Energies [J/pulse] 7 1 6 Eon 5 4 Eoff 3 2 Ere c 1 0 0 0 2 4 6 8 10 12 0 2 Gate resistor [Ohm] 8 10 12 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 100 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 150°C Inductive load VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 125°C Inductive load 10 Switching Times [µs] 10 Switching Times [µs] 6 Gate resistor [Ohm] HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) td(off) 1 td(on) tf 0.1 td(off) td(on) 1 tr 0.1 tr 0.01 100 4 tf 1000 10000 0.01 100 Collector Current [A] December 2012 (HVM-1059-A) 1000 Collector Current [A] 6 10000 < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 100 10000 1000 1 trr 100 10 10000 1000 Irr 10 1000 1 trr 0.1 100 10 10000 1000 Emitter Current [A] Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 R th (j-c)Q = 8.5K/kW R th (j-c)R = 1 5.5K/kW 1 t ( t ) i 1 exp Z th ( j c) R i i 1 n 0.8 0.6 Ri [K/kW] : 1 0.0055 2 0.2360 3 0.4680 4 0.2905 ti [sec] : 0.0001 0.0131 0.0878 0.6247 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] December 2012 (HVM-1059-A) 7 100 Reverse Recovery Current [A] 10 Reverse Recovery Time [µs] Irr 0.1 100 10000 VCC = 1800V, VGE = ±15V R G(on) = 1.6Ω, LS = 100nH Tj = 150°C, Inductive load Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 1800V, VGE = ±15V R G(on) = 1.6Ω, LS = 100nH Tj = 125°C, Inductive load < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 4000 20 VCC 2500V, VGE = ±15V RG(on) = 1.6Ω, R G(off) = 5.6Ω Tj = 150°C VCC 2500V, VGE = ±15V Tj = 150°C, RG(off) = 5.6Ω 15 Collector Current [kA] Collector Current [A] 3000 2000 1000 0 5 0 0 1000 2000 3000 4000 0 Collector-Emitter Voltage [V] 4000 VCC 25 00 V, di/d t < 9 kA/µs Tj = 150 °C 3000 2000 1000 0 0 1000 2000 3000 4000 Emitter-Collector Voltage [V] December 2012 (HVM-1059-A) 1000 2000 3000 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) Reverse Recovery Current [A] 10 8 4000 < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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