< IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 225A Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant Dual switch (Half-Bridge) ●Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL t=0.8 SECTION A DETAIL B SECTION C-C INTERNAL CONNECTION 9 8 Terminal code Tr2 10 7 Di1 Di2 11 6 Tr1 NTC Th 1 2 3 4 5 Publication Date : December 2013 1 1 2 3 4 5 6 7 8 9 10 11 TH1 TH2 G1 Es1 Cs1 C2E1 C2E1 G2 Es2 E2 C1 Tolerance otherwise specified Division of Dimension 3 Tolerance 0.5 to ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC Item DC, TC=96 °C Collector current ICRM Ptot (Note1) IERM (Note1) (Note2, 4) 225 Pulse, Repetitive, VGE=15 V Total power dissipation IE Conditions TC=25 °C DC Emitter current (Note3) A 450 (Note2, 4) 1250 (Note2) W 225 Pulse, Repetitive (Note3) A 450 MODULE Rating Unit Visol Symbol Isolation voltage Item Terminals to base plate, RMS, f=60 Hz, AC 1 min Conditions 4000 V Tjmax Maximum junction temperature Instantaneous event (overload) 175 TCmax Maximum case temperature (Note4) 125 Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=22.5 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.90 2.35 Refer to the figure of test circuit T j =125 °C - 2.10 - (Note5) T j =150 °C - 2.15 - IC=225 A, T j =25 °C - 1.80 2.25 VGE=15 V, T j =125 °C - 2.00 - (Note5) T j =150 °C - 2.05 - IC=225 A, VGE=15 V, VCEsat (Terminal) Collector-emitter saturation voltage VCEsat (Chip) Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time VEC VCC=600 V, IC=225 A, VGE=15 V VCC=600 V, IC=225 A, VGE=±15 V, RG=1.5 Ω, Inductive load (Note1) Emitter-collector voltage (Note1) (Chip) - - 20 - - 4.0 - - 0.33 - 420 - - - 800 - - 200 - - 600 - - 300 T j =25 °C - 2.75 3.55 Refer to the figure of test circuit T j =125 °C - 2.30 - (Note5) T j =150 °C - 2.20 - IE=225 A, G-E short-circuited, (Terminal) VEC VCE=10 V, G-E short-circuited IE=225 A, T j =25 °C - 2.65 3.45 G-E short-circuited, T j =125 °C - 2.20 - (Note5) T j =150 °C - 2.10 - V V nF nC ns V V trr (Note1) Reverse recovery time VCC=600 V, IE=225 A, VGE=±15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=1.5 Ω, Inductive load - 6.0 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=225 A, - 21.7 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=1.5 Ω, T j =150 °C, - 23.1 - Reverse recovery energy per pulse Inductive load - 17.1 - mJ - - 1.0 mΩ - 3.2 - Ω Err (Note1) R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 °C (Note4) Per switch Publication Date : December 2013 2 mJ < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note4) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW (Note4) (Note6) (Note4) Max. Unit Min. THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Junction to case, per Inverter IGBT Thermal resistance Rth(j-c)D Rth(c-s) Limits Conditions Min. (Note4) (Note4) Junction to case, per Inverter DIODE Case to heat sink, per 1 module, Contact thermal resistance Thermal grease applied (Note4, 7) Typ. Max. - - 0.12 - - 0.18 - 15 - Unit K/W K/kW MECHANICAL CHARACTERISTICS Symbol Mt Item Mounting torque Flatness of base plate 4.5 N·m 2.5 3.0 3.5 N·m - 350 - g 17 - - 18.5 - - 10 - - 16.3 - - ±0 - +100 Mounting to heat sink - ec 4.0 M 5 screw Mounting torque Clearance Max. 3.5 mass da Typ. M 6 screw m Creepage distance Terminal to terminal Terminal to base plate Terminal to terminal Terminal to base plate On the centerline X, Y (Note8) Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE) 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. R 1 1 6. B( 25 / 50) = ln( 25 ) /( ), − R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side Unit Min. Main terminals Ms ds Limits Conditions -:Concave +:Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on thickness (t1.6~t2.0) of the PCB. Publication Date : December 2013 3 mm mm μm < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions Limits Min. Typ. Max. Unit VCC (DC) Supply voltage Applied across C1-E2 terminals - 600 850 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 terminals 14.0 15.0 16.5 V RG External gate resistance Per switch 1.5 - 15 Ω CHIP LOCATION (Top view) V Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor Publication Date : December 2013 4 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS vGE 5 90 % 0V iE 0 IE + 6,7 iC VCC 90 % RG 0A 0.5×I r r 8 vGE 10% iC -VGE 0A tr 9 td(on) 10 tf t td(off) Switching characteristics test circuit and waveforms t r r , Q r r characteristics test waveform iE iC iC ICM vCE VCC 0.1×ICM vEC VCC vCE 0.1×VCC 0.02×ICM 0 t IEM ICM VCC 0.1×VCC 0 t Irr vCE 0 trr ～ ～ 4 +VGE Q r r =0.5×I r r ×t r r t Load 3 -VGE ～ ～ iE 11 ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t 0A t 0V t ti DIODE Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) TEST CIRCUIT 11 11 Shortcircuited 5 VGE=15V V Shortcircuited 3 IC 3 IE V 8 Q1 10 9 Q2 D1 V CE s a t characteristics test circuit IE 8 10 9 6,7 Shortcircuited 8 10 V 4 6,7 IC 8 5 3 4 Shortcircuited VGE=15V 9 Shortcircuited V 6,7 6,7 Shortcircuited 5 3 4 4 11 11 5 10 9 D2 VEC characteristics test circuit Publication Date : December 2013 5 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) 450 VGE=20 V 15 V 12 V T j =150 °C (V) 3 350 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat IC (A) 400 COLLECTOR CURRENT (Chip) 3.5 300 11 V 250 200 10 V 150 9V 100 T j =125 °C 2.5 2 T j =25 °C 1.5 1 0.5 50 0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 0 100 (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) IC 400 (A) G-E short-circuited (Chip) (Chip) 1000 T j =125 °C (A) IC=450 A 8 IE IC=225 A T j =150 °C 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE 300 FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 VCEsat (V) T j =25 °C 200 COLLECTOR CURRENT IC=90 A 4 100 T j =25 °C 2 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 VGE 18 20 0 (V) 0.5 1 1.5 2 2.5 EMITTER-COLLECTOR VOLTAGE Publication Date : December 2013 6 3 VEC 3.5 (V) 4 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=1.6 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C VCC=600 V, VGE=±15 V, IC=225 A, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 100 10000 10000 1000 (ns) (ns) tr, tf 1000 100 tf td(off) td(on) SWITCHING TIME tr SWITCHING TIME td(off) tf td(on), td(off) (ns) tr 10 SWITCHING TIME 1000 SWITCHING TIME td(on), tf, td(off) (ns) tr td(on) 100 1 10 100 100 1000 COLLECTOR CURRENT IC 10 1 10 (A) 100 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=1.6 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, IC/IE=225 A, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eon Eoff Eon Err 10 1 Eoff Err 10 1 10 100 1000 1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 10 EXTERNAL GATE RESISTANCE Publication Date : December 2013 7 100 RG (Ω) < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C VCC=600 V, VGE=±15 V, RG=1.6 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 100 10000 Cies (nF) 10 (A) Coes 100 1000 trr Irr 1 (ns) CAPACITANCE Irr Cres 0.1 trr 0.01 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE VCE IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=225 A, Tj=25 °C Single pulse, TC=25 °C R t h ( j - c ) Q =0.12 K/W, R t h ( j - c ) D =0.18 K/W Zth(j-c) NORMALIZED TRANSIENT THERMAL RESISTANCE (V) 1000 EMITTER CURRENT 15 VGE GATE-EMITTER VOLTAGE 100 (V) 20 10 5 0 0 100 10 100 200 GATE CHARGE 400 QG 600 (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME Publication Date : December 2013 8 (S) 0.1 1 10 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) 10 RESISTANCE R (kΩ) 100 1 0.1 -50 -25 0 25 50 TEMPERATURE T 75 100 125 (°C) Publication Date : December 2013 9 < IGBT MODULES > CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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