MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ……………………… 400 A ● VCES …………………… 6500 V ● 1-element in a Pack (for brake chopper) ● Insulated Type ● AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 1 of 8 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Conditions Item VGE = 0 V Collector-emitter voltage Gate-emitter voltage Collector current (Note 2) Maximum power dissipation (Note 3) Unit Tj = -40 °C 5800 Tj = +25 °C 6300 Tj = +125 °C 6500 V VCE = 0V, Tj = 25°C ± 20 V DC, Tc = 80°C 400 A Pulse Emitter current Ratings (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 800 A 400 A 800 A 5900 W 10200 V 5100 V Tj Junction temperature −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C tpsc Maximum short circuit pulse width 10 µs VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C ELECTRICAL CHARACTERISTICS Symbol Item Limits Conditions Unit Min Typ Max Tj = 25°C — — 7 Tj = 125°C — 20 60 6.0 7.0 V mA ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 40 mA, Tj = 25°C 5.0 IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C −0.5 — 0.5 µA Cies Input capacitance — 82.0 — nF Coes Output capacitance — 5.0 — nF Cres Reverse transfer capacitance — 1.4 — nF — 6.6 — µC Tj = 25°C — 4.5 — Tj = 125°C — 4.6 — — 1.2 — µs — 0.35 — µs — 3.0 — J/P — 8.2 — µs VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 3600 V, IC = 400 A VGE = ±15 V, Tj = 25 °C Qg Total gate charge VCE(sat) Collector-emitter saturation voltage td(on) Turn-on delay time IC = 400 A (Note 4) VGE = 15 V VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(on) = 15 Ω V tr Turn-on rise time Eon(10%) Turn-on switching energy td(off) Turn-off delay time VCC = 3600 V, IC = 400 A tf Turn-off fall time VGE = ±15 V, RG(off) = 50 Ω — 0.5 — µs tf2 Turn-off fall time Tj = 125 °C, Ls = 170 nH — 3.1 — µs Eoff(10%) Turn-off switching energy J/P Tj = 125 °C, Ls = 170 nH (Note 5) (Note 5) (Note 2) VEC Emitter-collector voltage trr Reverse recovery time (Note 2) Reverse recovery time (Note 2) trr2 Qrr Erec(10%) (Note 6) , Inductive load Inductive load IE = 400 A (Note 4) VGE = 0 V Reverse recovery charge Reverse recovery energy t(IGBT_off) = 60 µs (Note 2) (Note 2), (Note 5) — 2.7 — Tj = 25 °C — 4.0 — Tj = 125 °C — 3.6 — — 1.0 — VCC = 3600 V, IE = 400 A V µs VGE = ±15 V, RG(on) = 15 Ω — 2.4 — µs Tj = 125 °C, Ls = 170 nH — 740 — µC — 1.4 — J/P t(IGBT_off) = 60 µs (Note 6) , Inductive load HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 2 of 8 MITSUBISHI HVIGBT MODULES CM400E4G-130H th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Item Rth(j-c)Q Thermal resistance Rth(j-c)R Thermal resistance Rth(c-f) Contact thermal resistance Conditions Limits Unit Min Typ Max Junction to Case, IGBT part — — 21.0 K/kW Junction to Case, FWDi part — — 33.0 K/kW Junction to Case, Clamp-Di part — — 33.0 K/kW Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 9.0 — K/kW MECHANICAL CHARACTERISTICS Symbol Item Mt Mounting torque Ms Mt Conditions Limits Unit Min Typ Max M8: Main terminals screw 7.0 — 15.0 N·m M6: Mounting screw 3.0 — 6.0 N·m M4: Auxiliary terminals screw 1.0 — 3.0 N·m — 1.35 — kg m Mass CTI Comparative tracking index 600 — — — da Clearance 26.0 — — mm ds Creepage distance 56.0 — — mm LP CE Parasitic stray inductance Collector to Emitter — 27.0 — nH Anode to Cathode — 54.0 — nH RCC’+EE’ Internal lead resistance Tc = 25°C, Collector to Emitter — 0.19 — mΩ Tc = 25°C, Anode to Cathode — 0.38 — mΩ Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode clamp diode (Clamp-Di). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. t(IGBT_off) definition is shown as follows. Note 1. Note 2. Note 3. Note 4. Note 5. Note 6. IC time t(IGBT_off) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 3 of 8 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 90%VGE VGE 10%VGE 0 VCC IC 90%IC 90%IC di 50%IC 10%IC 10%VCE 10%VCE VCE td(on) tr ton Eon = t1 ∫ td(off) t2 10%IC dt 0 tf2 ic•vce dt Eoff = t1 t2 t3 ∫ t4 ic•vce dt t3 tf = (0.9ic − 0.1ic) / (di/dt) toff = td(off) + tf t4 Fig. ２ – Definitions of switching times & energies of IGBT part Qrr = – IE (IF) di/dt ∫ t6 VEC (VR) trr di 0 10%IE Erec = – ∫ ie dt 0 t6 ie•vec dt t5 Irr dt 0 10%VEC trr2 0 t5 t6 Fig. ３ – Definitions of reverse recovery charge & energy of FWDi part HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 4 of 8 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 800 800 Tj = 125°C VCE = VGE VGE = 20V 600 VGE = 15V VGE = 10V VGE = 12V 400 VGE = 8V 200 Collector Current [A] Collector Current [A] 600 0 400 Tj = 125°C Tj = 25°C 200 0 0 1 2 3 4 5 6 7 8 0 Collector - Emitter Voltage [V] 2 4 6 8 10 12 Gate - Emitter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 800 VGE = 15V Tj = 25°C Tj = 125°C 600 Emitter Current [A] Collector Current [A] 600 400 200 Tj = 125°C Tj = 25°C 400 200 0 0 0 2 4 6 8 Collector-Emitter Saturation Voltage [V] 0 2 4 6 8 Emitter-Collector Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 5 of 8 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 VCE = 3600V, IC = 400A Tj = 25°C 15 Capacitance [nF] 100 Gate-Emitter Voltage [V] Cies 10 Coes Cres 1 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 0 -15 0.1 1 10 0 100 2 Collector-Emitter Voltage [V] 6 8 10 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 8 VCC = 3600V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω LS = 170nH, Tj = 125°C Inductive load VCC = 3600V, IC = 400A VGE = ±15V, LS = 170nH Tj = 125°C, Inductive load 7 Eon Switching Energies [J/P] 6 Switching Energies [J/P] 4 5 Eoff 4 3 Erec 2 1 6 Eon 5 4 Eoff 3 2 Erec 1 0 0 0 200 400 600 800 1000 Collector Current [A] 0 20 40 60 80 100 Gate resistor [Ohm] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 6 of 8 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 100 Switching Times [µs] td(on) 1 tf tr Irr 10 1000 trr 1 100 0.1 0.01 10 100 10 1000 10 1000 100 Emitter Current [A] Collector Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 21.0K/kW Rth(j-c)R = 33.0K/kW 1 0.8 Z 0.6 0.4 th( j − c ) (t ) = n ⎧ ⎪ i⎨ ⎪⎩ ∑ R 1− exp i =1 ⎛ t ⎞⎫ ⎜− ⎟ ⎟⎪ ⎜ i ⎠⎬ ⎝ τ ⎪⎭ Ri [K/kW] : 1 0.0096 2 0.1893 3 0.4044 4 0.3967 τi [sec] : 0.0001 0.0058 0.0602 0.3512 0.2 0 0.001 0.01 0.1 1 10 Time [s] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 7 of 8 Reverse Recovery Current [A] Reverse Recovery Time [µs] td(off) 10 0.1 10000 VCC = 3600V, VGE = ±15V RG(on) = 15Ω, LS = 170nH Tj = 125°C, Inductive load VCC = 3600V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω LS = 170nH, Tj = 125°C Inductive load MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 1200 10000 VCC ≤ 4500V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω Tj = 125°C VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) = 50Ω 8000 Collector Current [A] Collector Current [A] 1000 800 600 400 6000 4000 2000 200 0 0 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 1200 Reverse Recovery Current [A] VCC ≤ 4500V, Tj = 125°C di/dt < 2000A/µs 1000 800 600 400 200 0 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 8 of 8