MITSUBISHI CM600DY

MITSUBISHI HVIGBT MODULES
CM600DY-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600DY-34H
● IC ................................................................... 600A
● VCES ....................................................... 1700V
● Insulated Type
● 2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57±0.25
4 - M8 NUTS
57±0.25
C2
E1
C2
20
E1
G1
G2
E2
E2
C1
C1
E1
E2
C1
G1
C2
16
40
6 - M4 NUTS
C1
140
30
CM
124±0.25
C2
E1
CIRCUIT DIAGRAM
G2
18
6 - φ 7 MOUNTING HOLES
44
53
E2
57
5
55.2
35
11.85
11.5
LABEL
31.5
28
5
38
14
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM600DY-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
Conditions
VGE = 0V
VCE = 0V
DC, TC = 95°C
Pulse
Ratings
1700
±20
600
1200
600
1200
6900
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1.
2.
3.
4.
VCE = VCES, VGE = 0V
Min
—
Limits
Typ
—
Max
15
IC = 60mA, VCE = 10V
4.5
5.5
6.5
V
VGE = VGES, VCE = 0V
Tj = 25°C
IC = 600A, VGE = 15V
Tj = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.75
3.30
70
10.0
3.8
3.3
—
—
—
—
2.40
—
100
—
—
0.016
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.018
0.056
—
µA
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
(Note 4)
VCE = 10V
VGE = 0V
VCC = 850V, IC = 600A, VGE = 15V
VCC = 850V, IC = 600A
VGE1 = VGE2 = 15V
RG = 3.3Ω
Resistive load switching operation
IE = 600A, VGE = 0V
IE = 600A
die / dt = –1200A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
Unit
mA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T j) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM600DY-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE = 9V
400
VGE = 8V
200
VGE = 7V
0
4
2
6
8
COLLECTOR CURRENT IC (A)
VGE = 10V
1200
VCE = 10V
1000
800
600
400
200
0
10
Tj = 25°C
Tj = 125°C
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
VGE = 13V
600
0
EMITTER-COLLECTOR VOLTAGE VEC (V)
VGE = 12V
VGE = 11V
Tj = 25°C
VGE = 14V
1000
VGE = 15V
VGE = 20V
800
1000 1200
IC = 1200A
8
IC = 600A
6
4
2
IC = 240A
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
4
3
2
1
Tj = 25°C
Tj = 125°C
0
Tj = 25°C
COLLECTOR CURRENT IC (A)
5
0
10
0
200
400
600
800
1000 1200
EMITTER CURRENT IE (A)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR CURRENT IC (A)
1200
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres
: f = 1MHz
2
102
7
5
3
2
101
7
5
3
2
Cies
Coes
Cres
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM600DY-34H
td(on)
3
2
10–1
7
5
SWITCHING ENERGY (J/P)
td(off)
tr
tf
5 7 102
5 7 103
2 3
2 3
REVERSE RECOVERY TIME trr (µs)
100
7
5
5
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 850V, Tj = 125°C
3 Inductive load
3
2 VGE = ±15V, RG = 3.3Ω
2
trr
100
103
7
7
5
5
Irr
3
3
2
2
10–1
7
5
5 7 102
2 3
5 7 103
5
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1.0
VCC = 850V, VGE = ±15V,
RG = 3.3Ω, Tj = 125°C,
0.8 Inductive load
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
VCC = 850V, IC = 600A,
VGE = ±15V, Tj = 125°C,
2.5 Inductive load
0.6
Eon
0.4
Eoff
0.2
2.0
1.5
Eon
1.0
0.5
Erec
0
0
200
400
600
800
0
1000 1200
10
20
30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
VCC = 850V
IC = 600A
16
12
8
4
0
0
Eoff
Erec
40
CURRENT (A)
20
GATE-EMITTER VOLTAGE VGE (V)
2 3
102
7
5
COLLECTOR CURRENT IC (A)
SWITCHING ENERGY (J/P)
SWITCHING TIMES (µs)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
VCC = 850V, VGE = ±15V
3 RG = 3.3Ω, Tj = 125°C
2 Inductive load
0
1000
2000
3000
4000
GATE CHARGE QG (nC)
5000
REVERSE RECOVERY CURRENT Irr (A)
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
101
7
5
3
2
100
7
5
3
2
50
Single Pulse
TC = 25°C
Rth(j – c)Q = 0.018K/ W
Rth(j – c)R = 0.056K/ W
(Per 1/2 module)
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
Mar. 2003