MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC ................................................................... 600A ● VCES ....................................................... 1700V ● Insulated Type ● 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 4 - M8 NUTS 57±0.25 E1 C2 C1 E2 20 E1 G1 C1 E2 E1 CIRCUIT DIAGRAM E2 G1 C1 C2 G2 16 3 - M4 NUTS C1 140 30 CM 124±0.25 C2 E1 6 - φ 7 MOUNTING HOLES 40 53 5 55.2 35 11.85 11.5 LABEL 31.5 28 5 38 14 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions VGE = 0V VCE = 0V DC, TC = 95°C Pulse Ratings 1700 ±20 600 1200 600 1200 6900 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 (Note 1) Pulse TC = 25°C, IGBT part (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W °C °C V N·m N·m N·m kg ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min — Limits Typ — Max 15 IC = 60mA, VCE = 10V 4.5 5.5 6.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — — — — — — 2.75 3.30 70 10.0 3.8 3.3 — — — — 2.40 — 100 — — 0.016 2.50 — 100 — 0.016 0.5 3.58 — — — — — 1.20 1.50 2.00 0.60 3.12 2.00 — 0.018 0.056 — 3.25 2.00 — 0.056 — µA Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions (Note 4) VCE = 10V VGE = 0V VCC = 850V, IC = 600A, VGE = 15V VCC = 850V, IC = 600A VGE1 = VGE2 = 15V RG = 3.3Ω Resistive load switching operation IE = 600A, VGE = 0V IE = 600A die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 1/2 module) IF = 600A, Clamp diode part IF = 600A dif / dt = –1200A / µs, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/2 module) Unit mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W V µs µC K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 9V 400 VGE = 8V 200 VGE = 7V 0 4 2 6 8 COLLECTOR CURRENT IC (A) VGE = 10V 1200 VCE = 10V 1000 800 600 400 200 0 10 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 13V 600 0 EMITTER-COLLECTOR VOLTAGE VEC (V) VGE = 12V VGE = 11V Tj = 25°C VGE = 14V 1000 VGE = 15V VGE = 20V 800 1000 1200 IC = 1200A 8 IC = 600A 6 4 2 IC = 240A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 4 3 2 1 Tj = 25°C Tj = 125°C 0 Tj = 25°C COLLECTOR CURRENT IC (A) 5 0 10 0 200 400 600 800 1000 1200 EMITTER CURRENT IE (A) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 1200 103 7 VGE = 0V, Tj = 25°C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies Coes Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 MITSUBISHI HVIGBT MODULES CM600E2Y-34H td(on) 3 2 10–1 7 5 SWITCHING ENERGY (J/P) td(off) tr tf 5 7 102 5 7 103 2 3 2 3 REVERSE RECOVERY TIME trr (µs) 100 7 5 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 3.3Ω 2 trr 100 103 7 7 5 5 Irr 3 3 2 2 10–1 7 5 5 7 102 2 3 5 7 103 5 EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.0 VCC = 850V, VGE = ±15V, RG = 3.3Ω, Tj = 125°C, 0.8 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 850V, IC = 600A, VGE = ±15V, Tj = 125°C, 2.5 Inductive load 0.6 Eon 0.4 Eoff 0.2 2.0 1.5 Eon 1.0 0.5 Erec 0 0 200 400 600 800 0 1000 1200 10 20 30 GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 850V IC = 600A 16 12 8 4 0 0 Eoff Erec 40 CURRENT (A) 20 GATE-EMITTER VOLTAGE VGE (V) 2 3 102 7 5 COLLECTOR CURRENT IC (A) SWITCHING ENERGY (J/P) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 VCC = 850V, VGE = ±15V 3 RG = 3.3Ω, Tj = 125°C 2 Inductive load 0 1000 2000 3000 4000 GATE CHARGE QG (nC) 5000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 3 2 100 7 5 3 2 50 Single Pulse TC = 25°C Rth(j – c)Q = 0.018K/ W Rth(j – c)R = 0.056K/ W (Per 1/2 module) 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Mar. 2003