CM900DUC-24NF Mega Power Dual IGBTMOD™ Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 900 Amperes/1200 Volts A D P (8 PLACES) U N G H H L S W K C2E1 C2 C1 G2 E1 E2 G1 X J F BB Y CB Z CC F J E2 C1 U V E H H H H H H G G AA LABEL T G2 C2 C2E1 L R (9 PLACES) M E2 Di1 Tr2 E2 C1 Tr1 Di2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 5.91 Millimeters Dimensions Inches Millimeters 150.0 M 0.075±0.008 1.9±0.2 B 5.10 129.5 N 0.47 12.0 C 1.67±0.01 42.5±0.25 P 0.26 6.5 D 5.41±0.01 137.5±0.25 R M6 Metric M6 E 6.54 166.0 S 0.08 2.0 F 2.91±0.01 74.0±0.25 T 0.99 25.1 G 1.65 42.0 U 0.62 15.7 Description: Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heatsinking £ RoHS Compliant Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM900DUC-24NF is a 1200V (VCES), 900 Ampere Dual IGBTMOD Power Module. H 0.55 14.0 V 0.71 18.0 J 1.50±0.01 38.0±0.25 W 0.75 19.0 0.16 4.0 X 0.43 11.0 Y 0.83 21.0 Z 0.41 10.5 Type Current Rating Amperes VCES Volts (x 50) AA 0.22 5.5 CM 900 24 K L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N 01/10 Rev. 0 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM900DUC-24NF Mega Power Dual IGBTMOD™ 900 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM900DUC-24NF Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current DC (TC = 96°C)*1 IC 900 Amperes Peak Collector Current (Pulse, Tj ≤ 150°C)*4 ICM 1800 Amperes Emitter Current (TC = 25°C) IE*3 900 Amperes IEM*3 1800 Amperes PC 5900 Watts Mounting Torque, M6 Mounting Screws – 40 in-lb (max.) Mounting Torque, M6 Main Terminal Screw – 40 in-lb (max.) – 1450 Grams Viso 2500 Volts Peak Emitter Current (Pulse)*4 *1 Maximum Collector Dissipation (Tj < 150°C, TC = 25°C) Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips. *3 IE, IEM, VEC, IFSM, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. 2 01/10 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM900DUC-24NF Mega Power Dual IGBTMOD™ 900 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage (Chip) Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1 mA VGE(th) IC = 90mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V – – 1.0 µA VCE(sat) IC = 900A, VGE = 15V, Tj = 25°C*6 – 1.8 2.5 Volts IC = 900A, VGE = 15V, Tj = 125°C*6 – 2.0 – Volts IC = 900A, Terminal-Chip – 0.286 – mΩ – – 140 nF VCE = 10V, VGE = 0V – – 16 nF – – 3 nF – 4800 – nC (Without Lead Resistance) Module Lead Resistance Test Conditions R(lead) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCC = 600V, IC = 900A, VGE = 15V td(on) VCC = 600V, IC = 900A, – – 600 ns tr VGE1 = VGE2 = 15V, – – 200 ns td(off) RG = 0.35Ω, Inductive Load – – 800 ns tf Switching Operation – – 300 ns Reverse Recovery Time trr*3 IE = 900A Reverse Recovery Charge Qrr*3 Emitter-Collector Voltage (Chip) VEC*3 Inductive Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time Times Fall Time IE = 900A, VGE = 0V*6 – – 500 ns – 50 – µC – – 3.2 Volts 0.35 – 2.2 Ω (Without Lead resistance) External Gate Resistance RG Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Thermal Resistance, Junction to Case*1 Rth(j-c)Q Per IGBT (1/2 Module) – – 0.021 *1 Rth(j-c)D Per Clamp Diode (1/2 Module) – – 0.034 °C/W Rth(c-f) Thermal Grease Applied (1/2 Module) – 0.012 – °C/W Thermal Resistance, Junction to Case Contact Thermal Resistance*1 Units °C/W *1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips. *3 IE, IEM, VEC, IFSM, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *6 Pulse width and repetition rate should be such as to cause negligible teperature rise. 01/10 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM900DUC-24NF Mega Power Dual IGBTMOD™ 900 Amperes/1200 Volts VGE = 20V 15 13 1400 1800 Tj = 25°C 12 1200 1000 11 800 600 10 400 200 0 9 8 0 2 4 6 8 1200 1000 800 600 400 200 0 0 8 12 16 4 3 2 1 0 20 0 400 800 1200 1600 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 6 IC = 900A IC = 360A IC = 1800A 2 0 4 8 12 16 Tj = 25°C Tj = 125°C 102 0.5 1.0 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 tf td(on) COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING TIME, (ns) VCC = 600V VGE = ±15V RG = 0.35Ω Tj = 125°C Inductive Load 102 3.5 Cres 100 10-1 10-1 4.0 103 tr 102 VCC = 600V VGE = ±15V IC = 900A Tj = 125°C Inductive Load 100 GATE RESISTANCE, RG, (Ω) 101 102 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tf 101 10-1 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) td(off) td(on) 102 101 101 2.5 3.0 Coes 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tr 2.0 Cies 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 1.5 101 REVERSE RECOVERY TIME, trr, (ns) 4 103 CAPACITANCE, Cies, Coes, Cres, (nF) 8 2000 VGE = 0V Tj = 25°C 0 SWITCHING TIME, (ns) 4 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1400 10 10 4 5 VCE = 10V Tj = 25°C Tj = 125°C 1600 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1600 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0.35Ω Tj = 25°C Inductive Load 103 Irr trr 102 101 102 102 101 104 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) EMITTER CURRENT, IE, (AMPERES) 01/10 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 16 VCC = 400V 10-2 10-1 100 8 10-2 4 Single Pulse TC = 25°C Per Unit Base Rth(j-c') = 0.021°C/W (IGBT) Rth(j-c') = 0.034°C/W (Clamp) 10-3 103 10-5 10-4 102 VCC = 600V VGE = ±15V Tj = 125°C RG = 0.35Ω Eon Eoff Inductive Load 101 101 10-3 102 GATE CHARGE, QG, (nC) TIME, (s) COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY ENERGY VS. FORWARD CURRENT (TYPICAL) SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) 103 VCC = 600V VGE = ±15V Tj = 125°C RG = 0.35Ω Inductive Load 102 101 101 102 EMITTER CURRENT, IE, (AMPERES) 01/10 Rev. 0 103 103 102 101 10-1 VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Eon Eoff Inductive Load 100 GATE RESISTANCE, RG, (Ω) 101 SWITCHING LOSS, Err, (mJ/PULSE) 103 1000 2000 3000 4000 5000 6000 7000 0 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 101 10-1 VCC = 600V 12 0 SWITCHING LOSS, Err, (mJ/PULSE) IC = 900A SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 -3 10 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & CLAMP DIODE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) GATE CHARGE, VGE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM900DUC-24NF Mega Power Dual IGBTMOD™ 900 Amperes/1200 Volts 103 VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive Load 102 101 10-1 100 101 GATE RESISTANCE, RG, (Ω) 5