TC1070/TC1071/TC1187 50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown Features: General Description: • • • • The TC1070, TC1071 and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply current is typically 50 μA at full load (20 to 60 times lower than in bipolar regulators). • • • • 50 µA Ground Current for Longer Battery Life Adjustable Output Voltage Very Low Dropout Voltage Choice of 50 mA (TC1070), 100 mA (TC1071) and 150 mA (TC1187) Output Power-Saving Shutdown Mode Over Current and Over Temperature Protection Space-Saving 5-Pin SOT-23 Package Pin Compatible with Bipolar Regulators Applications: • • • • • • • Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers The TC1070, TC1071 and TC1187 are stable with an output capacitor of only 1 μF and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output versions, please see the TC1174 (IOUT = 300 mA) data sheet. Typical Application VIN 1 2 VIN Package Type VOUT TC1070 TC1071 TC1187 5 VOUT C1 + 1 µF GND 5-Pin SOT-23 VOUT ADJ 5 4 R1 3 SHDN The devices’ key features include ultra low-noise operation, very low dropout voltage – typically 85 mV (TC1070); 180 mV (TC1071); and 270 mV (TC1187) at full load, and fast response to step changes in load. Supply current is reduced to 0.5 μA (maximum) when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. Output voltage is programmed with a simple resistor divider from VOUT to ADJ to GND. ADJ TC1070 TC1071 TC1187 4 1 2 3 R2 VIN Shutdown Control (from Power Control Logic) © 2007 Microchip Technology Inc. VOUT = VREF x GND SHDN +1 ] [ R1 R2 DS21353D-page 1 TC1070/TC1071/TC1187 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage .........................................................6.5V Output Voltage........................... (-0.3V) to (VIN + 0.3V) Power Dissipation................Internally Limited (Note 5) Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V Operating Temperature Range...... -40°C < TJ < 125°C Storage Temperature..........................-65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units Test Conditions VIN Input Operating Voltage 2.7 — 6.0 V Note 6 IOUTMAX Maximum Output Current 50 100 150 — — — — — — mA TC1070 TC1071 TC1187 VOUT Adjustable Output Voltage Range VREF — 5.5 V VREF Reference Voltage 1.165 1.20 1.235 V ΔVREF/ΔT VREF Temperature Coefficient — 40 — ppm/°C ΔVOUT/ΔVIN Line Regulation ΔVOUT/VOUT Load Regulation VIN-VOUT Dropout Voltage — 0.05 0.35 % (VR + 1V) ≤ VIN ≤ 6V TC1070; TC1071 TC1187 — — 0.5 0.5 2 3 % IL = 0.1 mA to IOUTMAX IL = 0.1 mA to IOUTMAX (Note 2) 2 65 85 180 270 — — 120 250 400 mV TC1071; TC1187 TC1187 — — — — — IL = 0.1 mA IL = 20 mA IL = 50 mA IL = 100 mA IL = 150 mA (Note 3) — 50 80 μA SHDN = VIH, IL = 0 Supply Current IIN Note 1 IINSD Shutdown Supply Current — 0.05 0.5 μA SHDN = 0V PSRR Power Supply Rejection Ratio — 64 — dB FRE ≤ 1 kHz IOUTSC Output Short Circuit Current — 300 450 mA VOUT = 0V ΔVOUT/ΔPD Thermal Regulation — 0.04 — V/W Note 4 TSD Thermal Shutdown Die Temperature — 160 — °C ΔTSD Thermal Shutdown Hysteresis — 10 — °C eN Output Noise — 260 — nV/√Hz SHDN Input High Threshold 45 — — %VIN IL = IOUTMAX SHDN Input VIH VIN = 2.5V to 6.5V Note 1: TC VOUT = (VOUTMAX – VOUTMIN) x 106 VOUT x ΔT 2: 3: 4: 5: 6: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. DS21353D-page 2 © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol VIL Parameter Min Typ Max Units SHDN Input Low Threshold — — 15 %VIN Adjust Input Leakage Current — 50 — pA Test Conditions VIN = 2.5V to 6.5V ADJ Input IADJ Note 1: TC VOUT = (VOUTMAX – VOUTMIN) x 10 6 VOUT x ΔT 2: 3: 4: 5: 6: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. © 2007 Microchip Technology Inc. DS21353D-page 3 TC1070/TC1071/TC1187 2.0 TYPICAL CHARACTERISTICS Note: Unless otherwise specified, all parts are measured at temperature = +25°C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.020 DROPOUT VOLTAGE (V) 0.018 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.100 0.090 ILOAD = 10mA DROPOUT VOLTAGE (V) Note: 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 CIN = 1μF COUT = 1μF -40 0.020 0 20 50 TEMPERATURE (°C) 70 125 0.040 0.030 0.020 0.300 ILOAD = 10mA CIN = 1μF COUT = 1μF -20 0 20 50 TEMPERATURE (°C) 70 125 Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA 0.012 0.010 0.008 0.006 0.004 CIN = 1μF COUT = 1μF 0.000 0.250 0.200 0.150 0.100 0.050 CIN = 1μF COUT = 1μF 0.000 -40 -20 0 20 50 TEMPERATURE (°C) 70 125 -40 Ground Current vs. VIN (VOUT = 3.3V) 90 ILOAD = 10mA 80 70 60 50 40 30 20 CIN = 1μF COUT = 1μF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) DS21353D-page 4 -20 0 20 50 TEMPERATURE (°C) 70 125 Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 100mA 80 GND CURRENT (μA) GND CURRENT (μA) 0.050 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.014 90 0.060 -40 0.016 0.002 0.070 0.000 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.018 -20 ILOAD = 50mA 0.080 0.010 0.000 Dropout Voltage vs. Temperature (VOUT = 3.3V) 70 60 50 40 30 20 CIN = 1μF COUT = 1μF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 TYPICAL CHARACTERISTICS (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C) Ground Current vs. VIN (VOUT = 3.3V) 80 ILOAD = 0 ILOAD = 150mA 3 60 2.5 50 VOUT (V) GND CURRENT (μA) 70 VOUT vs. VIN (VOUT = 3.3V) 3.5 40 30 2 1.5 1 20 0.5 CIN = 1μF COUT = 1μF 10 0 CIN = 1μF COUT = 1μF 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 3.0 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) VOUT vs. VIN (VOUT = 3.3V) 3.5 0.5 1 1.5 Output Voltage vs. Temperature (VOUT = 3.3V) 3.320 ILOAD = 100mA ILOAD = 10mA 3.315 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 3.285 0.5 CIN = 1μF COUT = 1μF 0.0 0 3.290 3.288 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) CIN = 1μF COUT = 1μF VIN = 4.3V 3.280 3.275 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA VOUT (V) 3.286 3.284 3.282 3.280 3.278 3.276 CIN = 1μF COUT = 1μF VIN = 4.3V 3.274 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) © 2007 Microchip Technology Inc. DS21353D-page 5 TC1070/TC1071/TC1187 TYPICAL CHARACTERISTICS (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C) Output Voltage vs. Temperature (VOUT = 5V) 5.025 ILOAD = 10mA 4.990 4.988 5.010 4.986 5.005 5.000 4.995 4.990 4.985 4.984 4.982 4.980 4.978 VIN = 6V CIN = 1μF COUT = 1μF -40 ILOAD = 150mA 4.992 5.015 VOUT (V) VOUT (V) 5.020 Output Voltage vs. Temperature (VOUT = 5V) 4.994 VIN = 6V CIN = 1μF COUT = 1μF 4.976 -20 -10 0 20 40 85 4.974 125 -40 -20 -10 TEMPERATURE (°C) ILOAD = 10mA 70 50 40 30 20 10 -10 0 20 40 TEMPERATURE (°C) 85 50 40 30 20 VIN = 6V CIN = 1μF COUT = 1μF -10 125 Stability Region vs. Load Current RLOAD = 50Ω COUT = 1μF CIN = 1μF 1.0 -20 20 40 85 125 Power Supply Rejection Ratio -30 -35 COUT = 1μF to 10μF -40 100 -45 10 1 0 TEMPERATURE (°C) 1000 COUT ESR (Ω) NOISE (μV/√Hz) 125 ILOAD = 150mA -40 Output Noise vs. Frequency 10.0 85 0 0 -20 40 60 10 VIN = 6V CIN = 1μF COUT = 1μF -40 20 Temperature vs. Quiescent Current (VOUT = 5V) 80 Stable Region PSRR (dB) GND CURRENT (μA) 60 Temperature vs. Quiescent Current (VOUT = 5V) GND CURRENT (μA) 70 0 TEMPERATURE (°C) -50 IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1μF -55 -60 -65 0.1 -70 0.1 -75 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) DS21353D-page 6 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 TYPICAL CHARACTERISTICS (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C) Measure Rise Time of 3.3V LDO Thermal Shutdown Response of 5.0V LDO Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 184μS Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF VSHDN VOUT VOUT ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. Measure Rise Time of 5.0V LDO Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 192μS Measure Fall Time of 3.3V LDO Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 52μS VSHDN VSHDN VOUT VOUT © 2007 Microchip Technology Inc. DS21353D-page 7 TC1070/TC1071/TC1187 TYPICAL CHARACTERISTICS (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C) Measure Fall Time of 5.0V LDO Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 88μS VSHDN VOUT DS21353D-page 8 © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. (5-Pin SOT-23) Symbol 1 VIN 3.1 2 GND 3 SHDN Description Unregulated supply input. Ground terminal. Shutdown control input. 4 ADJ Output voltage adjust terminal. 5 VOUT Regulated voltage output. Input Voltage Supply (VIN) 3.4 Output Voltage Adjust (ADJ) Connect unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator, some input capacitance is necessary for proper operation. A 1 µF capacitor connected from VIN to ground is recommended for most applications. Output voltage setting is programmed with a resistor divider from VOUT to this input. A capacitor may also be added to this input to reduce output noise (see Section 4.2 “Output Capacitor”). 3.2 Connect the output load to VOUT of the LDO. Also connect the positive side of the LDO output capacitor as close as possible to the VOUT pin. Ground (GND) Connect the unregulated input supply ground return to GND. Also connect the negative side of the 1 µF typical input decoupling capacitor close to GND and the negative side of the output capacitor C1 to GND. 3.3 3.5 Regulated Voltage Output (Vout) Shutdown Control Input (SHDN) The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.5 μA (maximum). © 2007 Microchip Technology Inc. DS21353D-page 9 TC1070/TC1071/TC1187 4.0 DETAILED DESCRIPTION 4.1 The TC1070, TC1071 and TC1187 are adjustable output voltage regulators. (If a fixed version is desired, please see the TC1014/TC1015/TC1185 data sheet.) Unlike bipolar regulators, the TC1070, TC1071 and TC1187 supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0 mA to IOUTMAX operating load current range, (an important consideration in RTC and CMOS RAM battery back-up applications). Figure shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05 μA (typical), VOUT falls to zero volts. 3.0V Battery + 1 VIN + C1 1 μF 2 3 VOUT 5 R1 470K GND SHDN +2.45V C2 + 1 μF TC1070 TC1071 TC1187 ADJ 4 C3 100 pF to 0.01 μF (Optional) R2 470K Shutdown Control (from Power Control Logic) FIGURE 4-1: DS21353D-page 10 Battery-Operated Supply Adjust Input The output voltage setting is determined by the values of R1 and R2 (Equation 4-1). The ohmic values of these resistors should be between 470K and 3M to minimize bleeder current. The output voltage setting is calculated using the following equation. EQUATION 4-1: VOUT = VREF x [ R1 +1 R2 ] The voltage adjustment range of the TC1070, TC1071 and TC1187 is from VREF to (VIN – 0.05V). If so desired, a small capacitor (10 pF to 0.01 μF) may be added to the ADJ input to further reduce output noise. 4.2 Output Capacitor A 1 μF (minimum) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5.0Ω, and a resonant frequency above 1 MHz. A 1 μF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Equation 5-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst-case actual power dissipation: EQUATION 5-1: = 3.0V ±10% VOUTMIN = 2.7V – 2% ILOADMAX = 40 mA TJMAX = 125°C TAMAX = 55°C Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = [(3.0 x 1.10) – (2.7 x .0.98)]40 x 10–3 P D≈ (VINmax – VOUTmin)ILOADmax Where: PD VINMAX VOUTMIN ILOADMAX VINMAX = Worst-case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current = 26.2 mW Maximum allowable power dissipation: PDMAX = (TJMAX – TAMAX) θJA = (125 – 55) 220 = 318 mW The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 5-Pin SOT-23 package has a θJA of approximately 220° C/Watt. In this example, the TC1070 dissipates a maximum of 26.2 mW which is below the allowable limit of 318 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits. EQUATION 5-2: 5.3 PDMAX = (TJMAX – TAMAX) θJA where all terms are previously defined. © 2007 Microchip Technology Inc. Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θJA and therefore increase the maximum allowable power dissipation limit. DS21353D-page 11 TC1070/TC1071/TC1187 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SOT-23-5 Example: XXNN (V) Adjustable Legend: XX...X Y YY WW NNN e3 * Note: 6.2 TC1070 Code TC1071 Code TC1187 Code BANN BBNN R9NN XXNN Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Taping Form Component Taping Orientation for 5-Pin SOT-23 (EIAJ SC-74A) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size: Package 5-Pin SOT-23 DS21353D-page 12 Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in. © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 5-Lead Plastic Small Outline Transistor (OT) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 Units Dimension Limits Number of Pins MILLIMETERS MIN NOM MAX N 5 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 Overall Height A 0.90 – Molded Package Thickness A2 0.89 – 1.30 Standoff A1 0.00 – 0.15 Overall Width E 2.20 – 3.20 Molded Package Width E1 1.30 – 1.80 Overall Length D 2.70 – 3.10 1.90 BSC 1.45 Foot Length L 0.10 – 0.60 Footprint L1 0.35 – 0.80 Foot Angle φ 0° – 30° Lead Thickness c 0.08 – 0.26 Lead Width b 0.20 – 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-091B © 2007 Microchip Technology Inc. DS21353D-page 13 TC1070/TC1071/TC1187 DS21353D-page 14 © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 APPENDIX A: REVISION HISTORY Revision D (March 2007) • Ground current changed to 50 µA. • Package type changed to SOT-23. • Section 3.0 “Pin Descriptions”: Added pin descriptions. • Section 6.0 “Packaging Information”: Updated packaging information. Revision C (January 2006) • Undocumented changes. Revision B (May 2002) • Undocumented changes. Revision A (March 2002) • Original Release of this Document. © 2007 Microchip Technology Inc. DS21353D-page 15 TC1070/TC1071/TC1187 NOTES: DS21353D-page 16 © 2007 Microchip Technology Inc. TC1070/TC1071/TC1187 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XXXXX Device Temperature Range Package Device TC1070: 50 mA, Adjustable CMOS LDO w/Shutdown TC1071: 100 mA, Adjustable CMOS LDO w/Shutdown TC1187: 150 mA, Adjustable CMOS LDO w/Shutdown Temperature Range V Package CT713 = Examples: a) TC1070VCT713: b) TC1071VCT713: c) TC1187VCT713: 50 mA, Adjustable 5LD SOT-23 package 100 mA, Adjustable, 5LD SOT-23 package 150 mA, Adjustable 5LD SOT-23 package = -40°C to +125°C Plastic small outline transistor (OT) SOT-23, 5 lead, (tape and reel). © 2007 Microchip Technology Inc. DS21353D-page 17 TC1070/TC1071/TC1187 NOTES: DS21353D-page 18 © 2007 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. 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Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2007 Microchip Technology Inc. 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