TCM828/TCM829 Switched Capacitor Voltage Converters Features Description • • • • • • • The TCM828/TCM829 devices are CMOS “chargepump” voltage converters in ultra-small, 5-Pin SOT-23 packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12 kHz for the TCM828, and 35 kHz for the TCM829. Charge Pump in 5-Pin SOT-23 Package >95% Voltage Conversion Efficiency Voltage Inversion and/or Doubling Low 50 µA (TCM828) Quiescent Current Operates from +1.5V to +5.5V Up to 25 mA Output Current Only Two External Capacitors Required External component requirement is only two capacitors (3.3 µF nominal) for standard voltage inverter applications. With a few additional components, a positive doubler can also be built. All other circuitry, including control, oscillator and power MOSFETs, are integrated on-chip. Supply current is 50 µA (TCM828) and 115 µA (TCM829). Applications • • • • • LCD Panel Bias Cellular Phones Pagers PDAs, Portable Dataloggers Battery-Powered Devices The TCM828 and TCM829 devices are available in a 5-Pin SOT-23 surface mount package. Package Type Typical Application Circuit TCM828/TCM829 SOT-23 Voltage Inverter C+ C- TCM828/TCM829 C1 VIN INPUT OUT 1 VOUTPUT OUT GND C2 VIN 2 C- 3 5 C+ 4 GND Ordering Information Package Temperature Range 5-Pin SOT-23 -40°C to +85°C TCM828VT 5-Pin SOT-23 -40°C to +125°C TCM829ECT 5-Pin SOT-23 -40°C to +85°C Part No. TCM828ECT Note: © 2010 Microchip Technology Inc. 5-Pin SOT-23 is equivalent to EIAJ SC-74A. DS21488B-page 1 TCM828/TCM829 NOTES: DS21488B-page 2 © 2010 Microchip Technology Inc. TCM828/TCM829 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Input Voltage (VIN to GND) .................................. +30V Output Voltage (OUT to GND) ...................6.0V, +0.3V Current at OUT Pin ............................................ 50 mA Short-Circuit Duration – OUT to GND ............Indefinite Operating Temperature Range ................ -40°C to +85°C Variable Temp. Range (TCM828 only) ............................... .............................................................................-40°C to +125°C Power Dissipation (TA ≤ 70°C) ........................ 240 mW Storage Temperature (Unbiased) ..........-65°C to +150°C Lead Temperature (Soldering, 10 sec)............ +300°C ELECTRICAL CHARACTERISTICS (0°C TO +85°C) Electrical Specifications: TA = 0°C to +85°C, VIN = +5V, C1 = C2 = 10 µF (TCM828), C1 = C2 = 3.3 µF (TCM829), unless otherwise noted. Typical values are at TA = +25°C. Parameters Sym Min Typ Max Units Supply Current IDD — 50 90 µA — 115 260 µA TCM829, TA = +25°C Minimum Supply Voltage V+ 1.5 — — V RLOAD = 10 kΩ, TA = 0°C to +85°C Maximum Supply Voltage V+ — — 5.5 V RLOAD = 10 kΩ 8.4 12 15.6 kHz TCM828, TA = +25°C 24.5 35 45.5 kHz TCM829, TA = +25°C Oscillator Frequency FOSC Conditions TCM828, TA = +25°C Power Efficiency PEFF — 96 — % ILOAD = 3 mA,TA = +25°C Voltage Conversion Efficiency VEFF 95 99.9 — % RLOAD = ∞ Output Resistance ROUT — 25 50 Ω IOUT = 5 mA,TA = +25°C — — 65 Ω IOUT = 5 mA,TA = 0°C to +85°C Note 1: Capacitor contribution is approximately 20% of the output impedance [ESR = 1/pump frequency x capacitance)]. ELECTRICAL CHARACTERISTICS (-40°C TO +85°C) Electrical Specifications: TA = -40°C to +85°C, VIN = +5V, C1 = C2 = 10 µF (TCM828), C1 = C2 = 3.3 µF (TCM829), unless otherwise noted. Typical values are at TA = +25°C. (Note 1) Parameters Sym Min Typ Max Units Supply Current IDD — — 115 µA — — 325 µA TCM829 Supply Voltage Range V+ 1.5 — 5.5 V RLOAD = 10 kΩ Oscillator Frequency Output Resistance Note 1: FOSC ROUT Conditions TCM828 6 — 15.6 kHz TCM828 19 — 45.5 kHz TCM829 — — 65 Ω IOUT = 5 mA All -40°C to +85°C specifications above are assured by design. © 2010 Microchip Technology Inc. DS21488B-page 3 TCM828/TCM829 NOTES: DS21488B-page 4 © 2010 Microchip Technology Inc. TCM828/TCM829 2.0 TYPICAL CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range. 70 40 60 35 OUTPUT CURRENT (mA) OUTPUT RESISTANCE (Ω) Note: Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted. 50 40 30 TCM828 TCM829 20 VIN = 4.75V, VOUT = – 4.0V 30 VIN = 3.15V, VOUT = – 2.5V 25 20 15 VIN = 1.9V, VOUT = –1.5V 10 10 5 0 0 1.5 2.5 3.5 4.5 10 0 SUPPLY VOLTAGE (V) Output Resistance vs. FIGURE 2-3: vs. Capacitance. 80 40 70 35 60 VIN = 1.5V 50 40 30 20 VIN = 3.3V VIN = 5.0V VIN = 4.75V, V– = – 4.0V 30 VIN = 3.15V, V– = – 2.5V 25 20 15 VIN = 1.9V, VOUT = – 1.5V 10 0 0°C 25°C 85°C 0 5 Output Resistance vs. © 2010 Microchip Technology Inc. 10 15 20 25 30 35 CAPACITANCE (µF) TEMPERATURE (°C) FIGURE 2-2: Temperature. TCM828 – Output Current 5 10 0 –40°C 40 CAPACITANCE (µF) OUTPUT CURRENT (mA) OUTPUT RESISTANCE (Ω) FIGURE 2-1: Supply Voltage. 30 20 FIGURE 2-4: vs. Capacitance. TCM829 – Output Current DS21488B-page 5 TCM828/TCM829 450 14 400 VIN = 4.75V, VOUT = – 4.0V 350 PUMP FREQUENCY (kHz) OUTPUT VOLTAGE RIPPLE (mVp-p) Note:Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted. 300 VIN = 3.15V, VOUT = – 2.5V 250 200 VIN = 1.9V, VOUT = – 1.5V 150 100 VIN = 5.0V 12 VIN = 3.3V 10 VIN = 1.5V 8 6 4 2 50 0 0 5 10 25 20 25 30 35 0 –40 5 0°C CAPACITANCE (µF) FIGURE 2-5: TCM828 – Output Voltage Ripple vs. Capacitance. FIGURE 2-8: vs. Temperature. 300 85°C TCM828 – Pump Frequency 45 200 VIN = 3.15V, VOUT = – 2.5V 150 VIN = 1.9V, VOUT = – 1.5V 100 VIN = 5.0V 40 VIN = 4.75V, VOUT = – 4.0V 250 PUMP FREQUENCY (kHz) OUTPUT VOLTAGE RIPPLE (mVp-p) 25°C TEMPERATURE (°C) 50 35 VIN = 3.3V 30 25 VIN = 1.5V 20 15 10 5 0 0 5 15 10 20 0 –40°C 35 30 0°C CAPACITANCE (µF) 25°C 85°C TEMPERATURE (°C) FIGURE 2-6: TCM829 – Output Voltage Ripple vs. Capacitance. FIGURE 2-9: vs. Temperature. TCM829 – Pump Frequency 0 100 –1 OUTPUT VOLTAGE (V) SUPPLY CURRENT (µ A) p 120 80 TCM829 60 40 TCM828 VIN = 2.0V –2 VIN = 3.3V –3 –4 VIN = 5.0V –5 20 0 –6 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 SUPPLY VOLTAGE (V) FIGURE 2-7: Voltage. DS21488B-page 6 Supply Current vs. Supply 10 20 30 40 50 OUTPUT CURRENT (mA) FIGURE 2-10: Current. Output Voltage vs. Output © 2010 Microchip Technology Inc. TCM828/TCM829 Note: Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted. y p 100 EFFICIENCY (%) VIN = 5.0V 80 VIN = 3.3V VIN =1.5V 60 40 0 FIGURE 2-11: Current. 10 20 30 40 OUTPUT CURRENT (mA) 50 Efficiency vs. Output © 2010 Microchip Technology Inc. DS21488B-page 7 TCM828/TCM829 NOTES: DS21488B-page 8 © 2010 Microchip Technology Inc. TCM828/TCM829 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE TCM828/TCM829 SOT-23 Symbol 1 OUT 2 VIN 3 C1- 4 GND Ground 5 C1+ Commutation capacitor positive terminal © 2010 Microchip Technology Inc. Function Inverting charge pump output Positive power supply input Commutation capacitor negative terminal DS21488B-page 9 TCM828/TCM829 NOTES: DS21488B-page 10 © 2010 Microchip Technology Inc. TCM828/TCM829 4.0 DETAILED DESCRIPTION The TCM828/TCM829 charge pump converters invert the voltage applied to the VIN pin. Conversion consists of a two phase operation (Figure 4-1). During the first phase, switches S2 and S4 are open, while S1 and S3 are closed. During this time, C1 charges to the voltage on VIN and load current is supplied from C2. During the second phase, S2 and S4 are closed, and S1 and S3 are open. This action connects C1 across C2, restoring charge to C2. IN S2 S1 C1 TCM828/ TCM829 C2 S3 S4 VOUT = -(VIN) FIGURE 4-1: Charge Pump. Ideal Switched Capacitor © 2010 Microchip Technology Inc. DS21488B-page 11 TCM828/TCM829 NOTES: DS21488B-page 12 © 2010 Microchip Technology Inc. TCM828/TCM829 5.0 APPLICATIONS INFORMATION 5.0.1 OUTPUT VOLTAGE CONSIDERATIONS The TCM828/TCM829 devices perform voltage conversion, but do not provide regulation. The output voltage will droop in a linear manner with respect to load current. The value of this equivalent output resistance is approximately 25Ω nominal at +25°C and VIN = +5V. VOUT is approximately – 5V at light loads, and droops according to the equation below: The losses in the circuit due to factor 4 above are also shown in Equation 5-2. The output voltage ripple is shown in Equation 5-3. EQUATION 5-2: P LOSS ( 4 ) – 2V 3. 4. OUT RIPPLE OUT ]×f 2 ) + ( 0.5 ) ( C2 ) ( V RIPPLE 2 – OSC CHARGE PUMP EFFICIENCY The overall power efficiency of the charge pump is affected by four factors: 2. 2+V I OUT VRIPPLE = ---------------------------- + 2 ( I OUT ) ( ESRC2 ) ( f OSC ) ( C2 ) VOUT = –(VIN –VDROOP) 1. V IN EQUATION 5-3: VDROOP = IOUT × ROUT 5.0.2 = [ ( 0.5 ) ( C1 ) ( V Losses from power consumed by the internal oscillator, switch drive, etc. (which vary with input voltage, temperature and oscillator frequency). I2R losses due to the on-resistance of the MOSFET switches on-board the charge pump. Charge pump capacitor losses due to effective series resistance (ESR). Losses that occur during charge transfer (from the commutation capacitor to the output capacitor) when a voltage difference between the two capacitors exists. Most of the conversion losses are due to factors 2, 3 and 4 above. These losses are shown in Equation 5-1. f V+ VOUT C1 FIGURE 5-1: Model. V+ C2 RL Ideal Switched Capacitor REQUIV 1 R EQUIV = --------------f × C1 VOUT C2 RL EQUATION 5-1: P LOSS ( 2, 3, 4 ) = IOUT 2 × R OUT 1 ≅ I OUT 2 × -------------------------- + 8R SWITCH + 4ESR C1 + ESR C2 ( f OSC )C1 FIGURE 5-2: Resistance. Equivalent Output The 1/(fOSC)(C1) term in Equation 5-1 is the effective output resistance of an ideal switched capacitor circuit (Figures 5-1 and 5-2). © 2010 Microchip Technology Inc. DS21488B-page 13 TCM828/TCM829 CAPACITOR SELECTION 5.0.5 In order to maintain the lowest output resistance and output ripple voltage, it is recommended that low ESR capacitors be used. Additionally, larger values of C1 will lower the output resistance and larger values of C2 will reduce output ripple. (See Equation 5-1). Table 5-1 shows various values of C1 and the corresponding output resistance values @ +25°C. It assumes a 0.1Ω ESRC1 and 2Ω RSW. Table 5-2 shows the output voltage ripple for various values of C2. The VRIPPLE values assume 10 mA output load current and 0.1Ω ESRC2. TABLE 5-1: TCM828 ROUT (Ω) TCM829 ROUT (Ω) 0.1 850 302 1 100 45 3.3 42 25 10 25 19 47 18 17 100 17 17 I TABLE 5-2: OUTPUT VOLTAGE RIPPLE VS. C2 (ESR = 0.1Ω) IOUT 10MA C2 (µF) TCM828 VRIPPLE (mV) TCM829 ROUT (Ω) 1 835 286 3.3 254 88 10 85 31 47 20 8 100 10 5 5.0.4 The most common application for charge pump devices is the inverter (Figure 5-3). This application uses two external capacitors – C1 and C2 (plus a power supply bypass capacitor, if necessary). The output is equal to V–IN plus any voltage drops, due to loading. Refer to Table 5-1 and Table 5-1 for capacitor selection. VOUT C3 3.3 µF* VOUT OUTPUT RESISTANCE VS. C1 (ESR = 0.1Ω) C1 (µF) VOLTAGE INVERTER 5 C1+ 1 OUT 2 IN 3 C1- TCM828/ TCM829 5.0.3 GND C2 3.3 µF* C1 4 Voltage Inverter *10 µF (TCM828) FIGURE 5-3: 5.0.6 Test Circuit. CASCADING DEVICES Two or more TCM828/829 devices can be cascaded to increase output voltage (Table 5-4). If the output is lightly loaded, it will be close to (– 2 x VIN) but will droop at least by ROUT of the first device multiplied by the IQ of the second. It can be seen that the output resistance rises rapidly for multiple cascaded devices. For large negative voltage requirements see the TC682 or TCM680 data sheets. INPUT SUPPLY BYPASSING The VIN input should be capacitively bypassed to reduce AC impedance and minimize noise effects due to the switching internal to the device. The recommended capacitor depends on the configuration of the TCM828/TCM829 devices. If the device is loaded from OUT to GND, it is recommended that a large value capacitor (at least equal to C1) be connected from the input to GND. If the device is loaded from IN to OUT, a small (0.1 µF) capacitor is sufficient. RL 3.3 µF* ... V+IN 2 2 C1 3 TCM828/ 4 TCM829 5 "1" 3 C1 1 TCM828/ 4 TCM829 5 ... C2 "n" 1 VOUT C2 VOUT = -nVIN FIGURE 5-4: Cascading TCM828 or TCM829 Devices to Increase Output Voltage. DS21488B-page 14 © 2010 Microchip Technology Inc. TCM828/TCM829 5.0.7 PARALLELING DEVICES To reduce the value of ROUT, multiple TCM828/ TCM829 devices can be connected in parallel (Figure 5-5). The output resistance will be reduced by a factor of N, where N is the number of TCM828/ TCM829 device. Each device will require it’s own pump capacitor (C1), but all devices may share one reservoir capacitor (C2). However, to preserve ripple performance, the value of C2 should be scaled according to the number of paralleled TCM828/ TCM829 devices. V+IN C1 4 TCM828/ TCM829 5 C1 TCM828/ 4 TCM829 5 "1" D2 VOUT = (2VIN) (VFD1) - (VFD2) C3 C4 Combined Doubler and 3 C1 1 TCM828/ 4 TCM829 5 "n" ... VOUT = V-IN 5.0.9 1 VOUT C2 FIGURE 5-5: Paralleling TCM828 or TCM829 Devices to Reduce Output Resistance. 5.0.8 VOUT = V-IN C2 FIGURE 5-6: Inverter. 2 2 3 D1 1 OF SINGLE DEVICE V ROUT = OUT NUMBER OF DEVICES V+IN . . . D1, D2 = 1N4148 2 3 DIODE PROTECTION FOR HEAVY LOADS When heavy loads require the OUT pin to sink large currents, being delivered by a positive source, diode protection may be needed. The OUT pin should not be allowed to be pulled above ground. This is accomplished by connecting a Schottky diode (1N5817) as shown in Figure 5-7. VOLTAGE DOUBLER/INVERTER Another common application of the TCM828/TCM829 devices is shown in Figure 5-6. This circuit performs two functions in combination. C1 and C2 form the standard inverter circuit described above. C3 and C4, plus the two diodes, form the voltage doubler circuit. C1 and C3 are the pump capacitors, while C2 and C4 are the reservoir capacitors. Because both sub-circuits rely on the same switches, if either output is loaded, both will drop toward GND. Make sure that the total current drawn from both the outputs does not total more than 40 mA. © 2010 Microchip Technology Inc. GND 4 TCM828/ TCM829 OUT FIGURE 5-7: 5.0.10 1 High V– Load Current. LAYOUT CONSIDERATIONS As with any switching power supply circuit, good layout practice is recommended. Mount components as close together as possible, to minimize stray inductance and capacitance. Also use a large ground plane to minimize noise leakage into other circuitry. DS21488B-page 15 TCM828/TCM829 NOTES: DS21488B-page 16 © 2010 Microchip Technology Inc. TCM828/TCM829 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SOT-23 Example: Device XXNN Legend: XX...X Y YY WW NNN e3 * Note: Code TCM828ECT728 CANN TCM828VT713 CWNN TCM829ECT713-GVAO CBNN CA25 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2010 Microchip Technology Inc. DS21488B-page 17 TCM828/TCM829 PIN 1 User Direction of Feed Device Marking User Direction of Feed Device Marking W PIN 1 P Reverse Reel Component Orientation RT Suffix Device (Mark Upside Down) Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package 5-Pin SOT-23 FIGURE 6-1: DS21488B-page 18 Carrier Width (W) 8 mm Pitch (P) Part Per Full Reel Reel Size 4 mm 3000 7 in Component Taping Orientation for 5-Pin SOT-23 (EIAJ SC-74A) Devices. © 2010 Microchip Technology Inc. TCM828/TCM829 . $ !$%$/"-!0!!$ 1/&$ $"$ $$+22--- 2/ b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 3$! ! 4 $! 5% 8 &1! 44## 5 56 7 5 4"1$ )* 6%$!"4"1$ 6,9$ : ""1//!! ; : $" && : 6,<"$ # : ""1/<"$ # : ; 6,4$ : . $4$ 4 : = . $$ 4 : ; . $ > : > 4"/!! ; : = )* 4"<"$ 8 : ! !"#" $%" "&! $%! ! "&! $%! !! $'" ! "$ #( )*+ )! ! $'$,%! --$ %$$ ! !" - *) © 2010 Microchip Technology Inc. DS21488B-page 19 TCM828/TCM829 5-Lead Plastic Small Outline Transistor (CT) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS21488B-page 20 © 2010 Microchip Technology Inc. TCM828/TCM829 APPENDIX A: REVISION HISTORY Revision B (August 2010) The following is the list of modifications: 1. 2. 3. Added new operating temperature for TCM828 (TCM828VT). Reformatted the original document. Updated package drawings. Revision A (March 2001) • Original Release of this Document. © 2010 Microchip Technology Inc. DS21488B-page 21 TCM828/TCM829 NOTES: DS21488B-page 22 © 2010 Microchip Technology Inc. TCM828/TCM829 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: TCM828: TCM829: Temperature Range: E V Package: CMOS Voltage Converter. CMOS Voltage Converter. = -40°C to +85°C = -40°C to +125°C CT = 5-Lead Plastic Small Outline Transistor, SOT-23. © 2010 Microchip Technology Inc. Examples: a) TCM828ECT728: Extended Temp., 5-LD SOT-23 Package. Various Temperature 5-LD SOT-23 Package. b) TCM828VT713: c) TCM829ECT713-GVAO: Extended Temp., 5-LD SOT-23 Package. DS21488B-page 23 TCM828/TCM829 NOTES: DS21488B-page 24 © 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 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Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2010, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-60932-445-2 Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2010 Microchip Technology Inc. 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