MICROCHIP TCM829

TCM828/TCM829
Switched Capacitor Voltage Converters
Features
Description
•
•
•
•
•
•
•
The TCM828/TCM829 devices are CMOS “chargepump” voltage converters in ultra-small, 5-Pin SOT-23
packages. They invert and/or double an input voltage
which can range from +1.5V to +5.5V. Conversion
efficiency is typically >95%. Switching frequency is
12 kHz for the TCM828, and 35 kHz for the TCM829.
Charge Pump in 5-Pin SOT-23 Package
>95% Voltage Conversion Efficiency
Voltage Inversion and/or Doubling
Low 50 µA (TCM828) Quiescent Current
Operates from +1.5V to +5.5V
Up to 25 mA Output Current
Only Two External Capacitors Required
External component requirement is only two capacitors
(3.3 µF nominal) for standard voltage inverter
applications. With a few additional components, a
positive doubler can also be built. All other circuitry,
including control, oscillator and power MOSFETs, are
integrated on-chip. Supply current is 50 µA (TCM828)
and 115 µA (TCM829).
Applications
•
•
•
•
•
LCD Panel Bias
Cellular Phones
Pagers
PDAs, Portable Dataloggers
Battery-Powered Devices
The TCM828 and TCM829 devices are available in a
5-Pin SOT-23 surface mount package.
Package Type
Typical Application Circuit
TCM828/TCM829
SOT-23
Voltage Inverter
C+
C-
TCM828/TCM829
C1
VIN
INPUT
OUT 1
VOUTPUT
OUT
GND
C2
VIN
2
C-
3
5
C+
4
GND
Ordering Information
Package
Temperature
Range
5-Pin SOT-23
-40°C to +85°C
TCM828VT
5-Pin SOT-23
-40°C to +125°C
TCM829ECT
5-Pin SOT-23
-40°C to +85°C
Part No.
TCM828ECT
Note:
© 2010 Microchip Technology Inc.
5-Pin SOT-23 is equivalent to EIAJ
SC-74A.
DS21488B-page 1
TCM828/TCM829
NOTES:
DS21488B-page 2
© 2010 Microchip Technology Inc.
TCM828/TCM829
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings †
Input Voltage (VIN to GND) .................................. +30V
Output Voltage (OUT to GND) ...................6.0V, +0.3V
Current at OUT Pin ............................................ 50 mA
Short-Circuit Duration – OUT to GND ............Indefinite
Operating Temperature Range ................ -40°C to +85°C
Variable Temp. Range (TCM828 only) ...............................
.............................................................................-40°C to +125°C
Power Dissipation (TA ≤ 70°C) ........................ 240 mW
Storage Temperature (Unbiased) ..........-65°C to +150°C
Lead Temperature (Soldering, 10 sec)............ +300°C
ELECTRICAL CHARACTERISTICS (0°C TO +85°C)
Electrical Specifications: TA = 0°C to +85°C, VIN = +5V, C1 = C2 = 10 µF (TCM828), C1 = C2 = 3.3 µF (TCM829),
unless otherwise noted. Typical values are at TA = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Supply Current
IDD
—
50
90
µA
—
115
260
µA
TCM829, TA = +25°C
Minimum Supply
Voltage
V+
1.5
—
—
V
RLOAD = 10 kΩ,
TA = 0°C to +85°C
Maximum Supply
Voltage
V+
—
—
5.5
V
RLOAD = 10 kΩ
8.4
12
15.6
kHz
TCM828, TA = +25°C
24.5
35
45.5
kHz
TCM829, TA = +25°C
Oscillator Frequency
FOSC
Conditions
TCM828, TA = +25°C
Power Efficiency
PEFF
—
96
—
%
ILOAD = 3 mA,TA = +25°C
Voltage Conversion
Efficiency
VEFF
95
99.9
—
%
RLOAD = ∞
Output Resistance
ROUT
—
25
50
Ω
IOUT = 5 mA,TA = +25°C
—
—
65
Ω
IOUT = 5 mA,TA = 0°C to +85°C
Note 1:
Capacitor contribution is approximately 20% of the output impedance [ESR = 1/pump frequency x
capacitance)].
ELECTRICAL CHARACTERISTICS (-40°C TO +85°C)
Electrical Specifications: TA = -40°C to +85°C, VIN = +5V, C1 = C2 = 10 µF (TCM828), C1 = C2 = 3.3 µF
(TCM829), unless otherwise noted. Typical values are at TA = +25°C. (Note 1)
Parameters
Sym
Min
Typ
Max
Units
Supply Current
IDD
—
—
115
µA
—
—
325
µA
TCM829
Supply Voltage Range
V+
1.5
—
5.5
V
RLOAD = 10 kΩ
Oscillator Frequency
Output Resistance
Note 1:
FOSC
ROUT
Conditions
TCM828
6
—
15.6
kHz
TCM828
19
—
45.5
kHz
TCM829
—
—
65
Ω
IOUT = 5 mA
All -40°C to +85°C specifications above are assured by design.
© 2010 Microchip Technology Inc.
DS21488B-page 3
TCM828/TCM829
NOTES:
DS21488B-page 4
© 2010 Microchip Technology Inc.
TCM828/TCM829
2.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.
70
40
60
35
OUTPUT CURRENT (mA)
OUTPUT RESISTANCE (Ω)
Note: Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted.
50
40
30
TCM828
TCM829
20
VIN = 4.75V, VOUT = – 4.0V
30
VIN = 3.15V, VOUT = – 2.5V
25
20
15
VIN = 1.9V, VOUT = –1.5V
10
10
5
0
0
1.5
2.5
3.5
4.5
10
0
SUPPLY VOLTAGE (V)
Output Resistance vs.
FIGURE 2-3:
vs. Capacitance.
80
40
70
35
60
VIN = 1.5V
50
40
30
20
VIN = 3.3V
VIN = 5.0V
VIN = 4.75V, V– = – 4.0V
30
VIN = 3.15V, V– = – 2.5V
25
20
15
VIN = 1.9V, VOUT = – 1.5V
10
0
0°C
25°C
85°C
0
5
Output Resistance vs.
© 2010 Microchip Technology Inc.
10
15
20
25
30
35
CAPACITANCE (µF)
TEMPERATURE (°C)
FIGURE 2-2:
Temperature.
TCM828 – Output Current
5
10
0
–40°C
40
CAPACITANCE (µF)
OUTPUT CURRENT (mA)
OUTPUT RESISTANCE (Ω)
FIGURE 2-1:
Supply Voltage.
30
20
FIGURE 2-4:
vs. Capacitance.
TCM829 – Output Current
DS21488B-page 5
TCM828/TCM829
450
14
400
VIN = 4.75V, VOUT = – 4.0V
350
PUMP FREQUENCY (kHz)
OUTPUT VOLTAGE RIPPLE (mVp-p)
Note:Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted.
300
VIN = 3.15V, VOUT = – 2.5V
250
200
VIN = 1.9V, VOUT = – 1.5V
150
100
VIN = 5.0V
12
VIN = 3.3V
10
VIN = 1.5V
8
6
4
2
50
0
0
5
10
25
20
25
30
35
0
–40
5
0°C
CAPACITANCE (µF)
FIGURE 2-5:
TCM828 – Output Voltage
Ripple vs. Capacitance.
FIGURE 2-8:
vs. Temperature.
300
85°C
TCM828 – Pump Frequency
45
200
VIN = 3.15V, VOUT = – 2.5V
150
VIN = 1.9V, VOUT = – 1.5V
100
VIN = 5.0V
40
VIN = 4.75V, VOUT = – 4.0V
250
PUMP FREQUENCY (kHz)
OUTPUT VOLTAGE RIPPLE (mVp-p)
25°C
TEMPERATURE (°C)
50
35
VIN = 3.3V
30
25
VIN = 1.5V
20
15
10
5
0
0
5
15
10
20
0
–40°C
35
30
0°C
CAPACITANCE (µF)
25°C
85°C
TEMPERATURE (°C)
FIGURE 2-6:
TCM829 – Output Voltage
Ripple vs. Capacitance.
FIGURE 2-9:
vs. Temperature.
TCM829 – Pump Frequency
0
100
–1
OUTPUT VOLTAGE (V)
SUPPLY CURRENT (µ A)
p
120
80
TCM829
60
40
TCM828
VIN = 2.0V
–2
VIN = 3.3V
–3
–4
VIN = 5.0V
–5
20
0
–6
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
SUPPLY VOLTAGE (V)
FIGURE 2-7:
Voltage.
DS21488B-page 6
Supply Current vs. Supply
10
20
30
40
50
OUTPUT CURRENT (mA)
FIGURE 2-10:
Current.
Output Voltage vs. Output
© 2010 Microchip Technology Inc.
TCM828/TCM829
Note: Circuit of Figure 5-3, VIN = +5V, C1 = C2 = C3, TA = +25°C, unless otherwise noted.
y
p
100
EFFICIENCY (%)
VIN = 5.0V
80
VIN = 3.3V
VIN =1.5V
60
40
0
FIGURE 2-11:
Current.
10
20
30
40
OUTPUT CURRENT (mA)
50
Efficiency vs. Output
© 2010 Microchip Technology Inc.
DS21488B-page 7
TCM828/TCM829
NOTES:
DS21488B-page 8
© 2010 Microchip Technology Inc.
TCM828/TCM829
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
TCM828/TCM829
SOT-23
Symbol
1
OUT
2
VIN
3
C1-
4
GND
Ground
5
C1+
Commutation capacitor positive terminal
© 2010 Microchip Technology Inc.
Function
Inverting charge pump output
Positive power supply input
Commutation capacitor negative terminal
DS21488B-page 9
TCM828/TCM829
NOTES:
DS21488B-page 10
© 2010 Microchip Technology Inc.
TCM828/TCM829
4.0
DETAILED DESCRIPTION
The TCM828/TCM829 charge pump converters invert
the voltage applied to the VIN pin. Conversion consists
of a two phase operation (Figure 4-1). During the first
phase, switches S2 and S4 are open, while S1 and S3
are closed. During this time, C1 charges to the voltage
on VIN and load current is supplied from C2. During the
second phase, S2 and S4 are closed, and S1 and S3
are open. This action connects C1 across C2, restoring
charge to C2.
IN
S2
S1
C1
TCM828/
TCM829
C2
S3
S4
VOUT = -(VIN)
FIGURE 4-1:
Charge Pump.
Ideal Switched Capacitor
© 2010 Microchip Technology Inc.
DS21488B-page 11
TCM828/TCM829
NOTES:
DS21488B-page 12
© 2010 Microchip Technology Inc.
TCM828/TCM829
5.0
APPLICATIONS INFORMATION
5.0.1
OUTPUT VOLTAGE
CONSIDERATIONS
The TCM828/TCM829 devices perform voltage
conversion, but do not provide regulation. The output
voltage will droop in a linear manner with respect to
load current. The value of this equivalent output
resistance is approximately 25Ω nominal at +25°C and
VIN = +5V. VOUT is approximately – 5V at light loads,
and droops according to the equation below:
The losses in the circuit due to factor 4 above are also
shown in Equation 5-2. The output voltage ripple is
shown in Equation 5-3.
EQUATION 5-2:
P
LOSS ( 4 )
– 2V
3.
4.
OUT RIPPLE
OUT
]×f
2 ) + ( 0.5 ) ( C2 ) ( V
RIPPLE
2
–
OSC
CHARGE PUMP EFFICIENCY
The overall power efficiency of the charge pump is
affected by four factors:
2.
2+V
I OUT
VRIPPLE = ---------------------------- + 2 ( I OUT ) ( ESRC2 )
( f OSC ) ( C2 )
VOUT = –(VIN –VDROOP)
1.
V
IN
EQUATION 5-3:
VDROOP = IOUT × ROUT
5.0.2
= [ ( 0.5 ) ( C1 ) ( V
Losses from power consumed by the internal
oscillator, switch drive, etc. (which vary with
input voltage, temperature and oscillator
frequency).
I2R losses due to the on-resistance of the
MOSFET switches on-board the charge pump.
Charge pump capacitor losses due to effective
series resistance (ESR).
Losses that occur during charge transfer (from
the commutation capacitor to the output
capacitor) when a voltage difference between
the two capacitors exists.
Most of the conversion losses are due to factors 2, 3
and 4 above. These losses are shown in Equation 5-1.
f
V+
VOUT
C1
FIGURE 5-1:
Model.
V+
C2
RL
Ideal Switched Capacitor
REQUIV
1
R EQUIV = --------------f × C1
VOUT
C2
RL
EQUATION 5-1:
P LOSS ( 2, 3, 4 ) = IOUT 2 × R OUT
1
≅ I OUT 2 × -------------------------- + 8R SWITCH + 4ESR C1 + ESR C2
( f OSC )C1
FIGURE 5-2:
Resistance.
Equivalent Output
The 1/(fOSC)(C1) term in Equation 5-1 is the effective
output resistance of an ideal switched capacitor circuit
(Figures 5-1 and 5-2).
© 2010 Microchip Technology Inc.
DS21488B-page 13
TCM828/TCM829
CAPACITOR SELECTION
5.0.5
In order to maintain the lowest output resistance and
output ripple voltage, it is recommended that low ESR
capacitors be used. Additionally, larger values of C1 will
lower the output resistance and larger values of C2 will
reduce output ripple. (See Equation 5-1).
Table 5-1 shows various values of C1 and the
corresponding output resistance values @ +25°C. It
assumes a 0.1Ω ESRC1 and 2Ω RSW. Table 5-2 shows
the output voltage ripple for various values of C2. The
VRIPPLE values assume 10 mA output load current and
0.1Ω ESRC2.
TABLE 5-1:
TCM828 ROUT (Ω)
TCM829 ROUT (Ω)
0.1
850
302
1
100
45
3.3
42
25
10
25
19
47
18
17
100
17
17
I
TABLE 5-2:
OUTPUT VOLTAGE RIPPLE
VS. C2 (ESR = 0.1Ω) IOUT
10MA
C2 (µF)
TCM828 VRIPPLE
(mV)
TCM829 ROUT (Ω)
1
835
286
3.3
254
88
10
85
31
47
20
8
100
10
5
5.0.4
The most common application for charge pump
devices is the inverter (Figure 5-3). This application
uses two external capacitors – C1 and C2 (plus a
power supply bypass capacitor, if necessary). The
output is equal to V–IN plus any voltage drops, due to
loading. Refer to Table 5-1 and Table 5-1 for capacitor
selection.
VOUT
C3
3.3 µF*
VOUT
OUTPUT RESISTANCE VS. C1
(ESR = 0.1Ω)
C1 (µF)
VOLTAGE INVERTER
5
C1+
1 OUT
2
IN
3 C1-
TCM828/
TCM829
5.0.3
GND
C2
3.3 µF*
C1
4
Voltage Inverter
*10 µF (TCM828)
FIGURE 5-3:
5.0.6
Test Circuit.
CASCADING DEVICES
Two or more TCM828/829 devices can be cascaded to
increase output voltage (Table 5-4). If the output is
lightly loaded, it will be close to (– 2 x VIN) but will droop
at least by ROUT of the first device multiplied by the IQ
of the second. It can be seen that the output resistance
rises rapidly for multiple cascaded devices. For large
negative voltage requirements see the TC682 or
TCM680 data sheets.
INPUT SUPPLY BYPASSING
The VIN input should be capacitively bypassed to
reduce AC impedance and minimize noise effects due
to the switching internal to the device. The
recommended capacitor depends on the configuration
of the TCM828/TCM829 devices.
If the device is loaded from OUT to GND, it is
recommended that a large value capacitor (at least
equal to C1) be connected from the input to GND. If the
device is loaded from IN to OUT, a small (0.1 µF)
capacitor is sufficient.
RL
3.3 µF*
...
V+IN
2
2
C1
3 TCM828/
4 TCM829
5
"1"
3
C1
1
TCM828/
4 TCM829
5
...
C2
"n"
1
VOUT
C2
VOUT = -nVIN
FIGURE 5-4:
Cascading TCM828 or
TCM829 Devices to Increase Output Voltage.
DS21488B-page 14
© 2010 Microchip Technology Inc.
TCM828/TCM829
5.0.7
PARALLELING DEVICES
To reduce the value of ROUT, multiple TCM828/
TCM829 devices can be connected in parallel
(Figure 5-5). The output resistance will be reduced by
a factor of N, where N is the number of TCM828/
TCM829 device. Each device will require it’s own pump
capacitor (C1), but all devices may share one reservoir
capacitor (C2). However, to preserve ripple
performance, the value of C2 should be scaled
according to the number of paralleled TCM828/
TCM829 devices.
V+IN
C1
4
TCM828/
TCM829
5
C1
TCM828/
4 TCM829
5
"1"
D2
VOUT = (2VIN) (VFD1) - (VFD2)
C3
C4
Combined Doubler and
3
C1
1
TCM828/
4 TCM829
5
"n"
...
VOUT = V-IN
5.0.9
1
VOUT
C2
FIGURE 5-5:
Paralleling TCM828 or
TCM829 Devices to Reduce Output Resistance.
5.0.8
VOUT = V-IN
C2
FIGURE 5-6:
Inverter.
2
2
3
D1
1
OF SINGLE DEVICE
V
ROUT = OUT
NUMBER OF DEVICES
V+IN . . .
D1, D2 = 1N4148
2
3
DIODE PROTECTION FOR HEAVY
LOADS
When heavy loads require the OUT pin to sink large
currents, being delivered by a positive source, diode
protection may be needed. The OUT pin should not be
allowed to be pulled above ground. This is
accomplished by connecting a Schottky diode
(1N5817) as shown in Figure 5-7.
VOLTAGE DOUBLER/INVERTER
Another common application of the TCM828/TCM829
devices is shown in Figure 5-6. This circuit performs
two functions in combination. C1 and C2 form the
standard inverter circuit described above. C3 and C4,
plus the two diodes, form the voltage doubler circuit. C1
and C3 are the pump capacitors, while C2 and C4 are
the reservoir capacitors. Because both sub-circuits rely
on the same switches, if either output is loaded, both
will drop toward GND. Make sure that the total current
drawn from both the outputs does not total more than
40 mA.
© 2010 Microchip Technology Inc.
GND
4
TCM828/
TCM829
OUT
FIGURE 5-7:
5.0.10
1
High V– Load Current.
LAYOUT CONSIDERATIONS
As with any switching power supply circuit, good layout
practice is recommended. Mount components as close
together as possible, to minimize stray inductance and
capacitance. Also use a large ground plane to minimize
noise leakage into other circuitry.
DS21488B-page 15
TCM828/TCM829
NOTES:
DS21488B-page 16
© 2010 Microchip Technology Inc.
TCM828/TCM829
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SOT-23
Example:
Device
XXNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Code
TCM828ECT728
CANN
TCM828VT713
CWNN
TCM829ECT713-GVAO
CBNN
CA25
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2010 Microchip Technology Inc.
DS21488B-page 17
TCM828/TCM829
PIN 1
User Direction of Feed
Device
Marking
User Direction of Feed
Device
Marking
W
PIN 1
P
Reverse Reel Component Orientation
RT Suffix Device
(Mark Upside Down)
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
5-Pin SOT-23
FIGURE 6-1:
DS21488B-page 18
Carrier Width (W)
8 mm
Pitch (P)
Part Per Full Reel
Reel Size
4 mm
3000
7 in
Component Taping Orientation for 5-Pin SOT-23 (EIAJ SC-74A) Devices.
© 2010 Microchip Technology Inc.
TCM828/TCM829
.
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© 2010 Microchip Technology Inc.
DS21488B-page 19
TCM828/TCM829
5-Lead Plastic Small Outline Transistor (CT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS21488B-page 20
© 2010 Microchip Technology Inc.
TCM828/TCM829
APPENDIX A:
REVISION HISTORY
Revision B (August 2010)
The following is the list of modifications:
1.
2.
3.
Added new operating temperature for TCM828
(TCM828VT).
Reformatted the original document.
Updated package drawings.
Revision A (March 2001)
• Original Release of this Document.
© 2010 Microchip Technology Inc.
DS21488B-page 21
TCM828/TCM829
NOTES:
DS21488B-page 22
© 2010 Microchip Technology Inc.
TCM828/TCM829
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
/XX
Device
Temperature
Range
Package
Device:
TCM828:
TCM829:
Temperature Range: E
V
Package:
CMOS Voltage Converter.
CMOS Voltage Converter.
= -40°C to +85°C
= -40°C to +125°C
CT = 5-Lead Plastic Small Outline Transistor, SOT-23.
© 2010 Microchip Technology Inc.
Examples:
a)
TCM828ECT728:
Extended Temp.,
5-LD SOT-23
Package.
Various Temperature
5-LD SOT-23
Package.
b)
TCM828VT713:
c)
TCM829ECT713-GVAO:
Extended Temp.,
5-LD SOT-23
Package.
DS21488B-page 23
TCM828/TCM829
NOTES:
DS21488B-page 24
© 2010 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-445-2
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2010 Microchip Technology Inc.
DS21488B-page 25
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07/15/10
DS21488B-page 26
© 2010 Microchip Technology Inc.