\yJ.£.i±£.u ij <z3s.ml-Conau.ctoi , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1909 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -140V(Min) 3.B/IITTER • Good Linearity of HFE 1 • Complement to Type 2SC5101 2 TO-3PML package 3 APPLICATIONS • Designed for audio and general purpose applications <*> ABSOLUTE MAXIMUM RATINGS(Ta=25"C) SYMBOL PARAMETER VALUE UNIT ;f f VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V mm VEBO Emitter-Base Voltage -6 V DIM MM A 19.90 B C D F G Ic Collector Current-Continuous -10 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25°C 80 W Junction Temperature 150 °C N Q R S 0 -55-150 °c Y Z Tj Tstg Storage Temperature Range H J K L 15.90 5.50 0.90 3.30 2.90 5.90 0.59S 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 MAX 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1909 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified TYP. MAX PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A -0.5 V ICBO Collector Cutoff Current VCB= -UOV; IE= 0 -10 uA IEBO Emitter Cutoff Current VEB= -6V; lc= 0 -10 uA hFE DC Current Gain lc= -3A; Vce= -4V COB Collector Output Capacitance I E =0; V CB =-10V;f=1MHz Current-Gain — Bandwidth Product I E =0.5A;V CE =-12V ft CONDITIONS MIN SYMBOL -140 UNIT V 50 400 PF 20 MHz 0.17 vs 1.86 us 0.27 v s Switching times ton Turn-on Time tstg Storage Time tf | C =_5A, R L =12Q, |B1= -iB2= -Q.5A, Vcc= -60V Fall Time hFE classifications o P Y 50-100 70-140 90-180