CSM_EE-SY1200_E_1_1 EE-SY1200 Photomicrosensor (Reflective) ■ Dimensions Detector center (Unit: mm) Emitter center 1.9 (0.7) (1) (0.8) (0.8) 3.2 Note. Unless otherwise specified tolerances are ±0.15. No burrs dimensions are included in outline dimensions. The burrs dimensions are 0.15 MAX. Diagonal line indicate the region is part Au plating area. ■ Features • Ultra-compact model. • PCB surface mounting type. • High S/N ratio (High light current / Low leakage current) ■ Absolute Maximum Ratings (Ta=25°C) Item Recommended Soldering Pattern 1.1 E 2-1 2-1.7 2-1 K 1.2 2-0.65 2-0.45 2-0.65 0.7 C A Terminal No. A Emitter Note 1. The shaded portion in the above figure may cause shorting. Do not wire in this portion. 2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm. Name Internal Circuit Anode K Cathode C Collector E Emitter Detector C A E K Symbol Rated value Unit Forward current IF 50*1 mA Pulse forward current IFP 500*2 mA Reverse voltage VR 4 V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5 V Collector current IC 20 mA Collector dissipation PC 50*1 mW Operating temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Reflow soldering temperature Tsol 240*3 °C *1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. *2. The pulse width is 10 μs maximum with a frequency of 100 Hz. *3. Complete soldering within 10 seconds for reflow soldering. ■ Electrical and Optical Characteristics (Ta=25°C) Value Item Symbol Unit MIN. TYP. MAX. Condition Forward voltage VF --- 1.2 1.4 V IF = 20 mA Reverse current IR --- --- 10 μA VR = 4 V Peak emission wavelength λP --- 940 --- nm --- Light current 1 I L1 200 --- 1000 μA Light current 2 I L2 150 --- --- μA IF = 10 mA, VCE = 2 V, Aluminumdeposited surface, d = 4 mm*1 IF = 4 mA, VCE = 2 V, Aluminum-deposited surface, d = 1 mm*1 ID --- 2 200 nA VCE = 10 V, 0 lx Detector Leakage current 1 I LEAK1 --- --- 500 nA Leakage current 2 I LEAK2 --- --- 200 nA VCE (sat) --- --- --- V --- λP --- 850 --- nm --- Rising time tr --- 30 --- μs Falling time tf --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 Emitter Dark current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength IF = 10 mA, VCE = 2 V, with no reflection*2 IF = 4 mA, VCE = 2 V, with no reflection*2 *1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object. *2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use. 1 EE-SY1200 ■ Engineering Data 50 40 30 20 0 Ta=25°C 2,500 VCE=2V d=1mm 2,000 Ta=+70°C 30 1,500 20 1,000 10 500 1,600 IF=10mA, d=1mm 1,200 IF=7mA, d=1mm 1,000 IF=15mA, d=4mm 800 0 0.2 0.4 0.6 0.8 1 0 1.2 1.4 1.6 1.8 Forward voltage VF (V) Fig 5. Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Fig 4. Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Ta=+25°C 40 0 20 40 60 80 100 Ambient temperature Ta (°C) 1,400 Ta=-30°C 120 IF=10mA VCE=2V 110 100 VCE=2V d=4mm 0 5 10 15 20 Forward current IF (mA) Fig 6. Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) 10 -20 50 3,000 IF PC 0 -40 60 Fig 3. Light Current vs. Forward Current Characteristics (Typical) Light current IL (µA) 60 Fig 2. Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Fig 1. Forward Current vs. Collector Dissipation Temperature Rating 10,000 1,000 100 10 90 1 IF=10mA, d=4mm 600 80 IF=4mA, d=1mm 400 0.1 IF=7mA, d=4mm IF=2mA, d=1mm 200 70 0.01 IF=4mA, d=4mm 0 0 2 4 IF=2mA, d=4mm 6 8 10 Collector-Emitter voltage VCE (V) 60 -40 0 20 40 60 80 100 Ambient temperature Ta (°C) Fig 8. Sensing Distance Characteristics (Typical) 0.001 -30 -20 -10 tf 100 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (°C) 120 Aluminum-deposited surface 90 d 80 IF=4mA, 10mA VCE=10V 70 60 50 Relative light current IL (%) tr 1,000 0 Fig 9. Sensing Position Characteristics (Typical) 100 10,000 Relative light current IL (%) Response time tr,tf (µs) Fig 7. Response Time vs. Load Resistance Characteristics (Typical) -20 White 100 Black d L - 0 + 80 IF=10mA VCE=2V d=4mm 60 40 40 30 10 20 IF=4mA VCE=2V d=1mm 20 10 1 0.1 1 10 100 Load resistance RL (kΩ) Relative light current IL (%) Fig 10. Sensing Position Characteristics (Typical) 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Distance d (mm) Fig 11. Response Time Measurement Circuit Black 0 d - 0 0 + -4 -3 -2 -1 0 1 2 3 4 Card moving distance L (mm) Fig 12. Light Current Measurement Setup Diagram Aluminum-deposited surface t 80 tr tf 60 IF=10mA VCE=2V d=4mm Input IF=4mA VCE=2V d=1mm 20 0 -6 -5 t 90% 10% Output L 40 0 -6 Input White 100 0 -5 -4 -3 -2 IL d Glass VCC Output Sensor RL -1 0 1 2 3 4 Card moving distance L (mm) 2 EE-SY1200 ■ Tape and Reel ● Reel Dimension (Unit: mm) φ13±0.5 φ21±0.8 0.2 0.4 0.6 φ60±1 0.8 0.6 0.4 0.2 0.8 2±0.5 13 +10 180 -30 ● 15.4±1 Tape Dimension (Unit: mm) 4 φ1.5 2 4 1.75 5.5 12 3.45 0.3 1.35 2.15 ● Part Mounting Direction • The devices are oriented in the rectangular holes in the carrier tape so that the edge with the LED faces the round feeding holes. Tape Quantity 2,000 pcs./reel 3 0.2 0.4 0.6 0.8 0.8 A 0.6 K Pull-out direction 0.4 C 0.2 ● E EE-SY1200 ■ Precautions to be taken on mounting ● Temperature Profile ● 1. Reflow soldering must be done within 48 hours stored at the conditions of humidity 60%RH or less and temperature 5 to 25°C. 2. In case of long time storage after open, please mount at the conditions of humidity 70%RH or less and temperature 5 to 30°C within 1 week by using dry box or resealing with desiccant in moisture-proof bag by sealer. The reflow soldering can be implemented in two times complying with the following diagram. All the temperatures in the product must be within the diagram. 240°C MAX. Temperature (°C) 1to 4°C/sec 200°C 10 sec MAX. 160°C MAX. 1to 4°C/sec 50 sec MAX. 1to 4°C/sec 120 sec MAX. Treatment after Opening ● Baking before Mounting In case that it could not carry out the above treatment, it is able to mount by baking treatment. However baking treatment shall be limited only 1 time. Recommended conditions : 60°C, 12 to 24 hours (reeled one) 100°C, 8 to 24 hours (loose one) Time (sec) ● Manual soldering The manual soldering cannot be applied to the products. There is a possibility that the housing is deformed and/or Au plating is peeled off by heat. ● Other Notes The use of infrared lamp causes the temperature at the resin to rise particularly too high. All the temperatures in the product must be within the above diagram. Do not immerse the resin part into the solder. Even if within the above temperature diagram, there is a possibility that the gold wire in the products is broken in case that the deformation of PCB gives the stress to the product terminals. Please confirm the conditions of the reflow soldering fully by actual solder reflow machine prior to the mass production use. ■ Storage and Handling after Opening ● Storage Conditions In order to avoid the absorption of moisture, the products shall be stored in a dry box with desiccant or in the following conditions. Storage temp. : 5 to 30°C Storage humidity : 70%RH or less 4