2N4029, 2N4033 Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC 1 Adc Total Device Dissipation @ TA = 25°C 2N4029 2N4033 PT Total Device Dissipation @ TC = 25°C 2N4029 2N4033 PT 1 EMITTER W 0.5 0.8 W 1.0 4.0 TJ, Tstg −65 to +200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient 2N4029 2N4033 RqJA Operating and Storage Junction Temperature Range 2 BASE TO−18 CASE 206AA STYLE 1 2N4029 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case 2N4029 2N4033 RqJC °C/W 325 195 150 40 November, 2013 − Rev. 1 JAN Device Package Shipping 2N4029 TO−18 Bulk 2N4033 TO−39 Bulk JANTX Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2013 ORDERING INFORMATION Level °C/W TO−39 CASE 205AB STYLE 1 2N4033 1 JANTXV Publication Order Number: 2N4029/D 2N4029, 2N4033 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit −80 − − −25 − − −10 −10 mA nA − − −10 −25 mA nA 50 100 70 25 − 300 − − − − − −0.15 −0.5 −1.0 − − −0.9 −1.2 1.5 6.0 − 20 − 80 OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −10 mAdc) Collector −Emitter Cutoff Current (VCE = −60 Vdc) ICES Collector−Base Cutoff Current (VCB = −80 Vdc, IE = 0) (VCB = −60 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = −5 Vdc) (VEB = −3 Vdc) IEBO Vdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −0.1 mAdc, VCE = −5 Vdc) (IC = −100 mAdc, VCE = −5 Vdc) (IC = −500 mAdc, VCE = −5 Vdc) (IC = −1 Adc, VCE = −5 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) (IC = −1 Adc, IB = −100 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Magnitude of Small−Signal Current Gain (IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz) |hfe| Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo Input Capacitance (VEB = −0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo − pF pF SWITCHING CHARACTERISTICS Delay Time (Reference Figure in MIL−PRF−19500/512) td − 15 ns Rise Time (Reference Figure in MIL−PRF−19500/512) tr − 25 ns Storage Time (Reference Figure in MIL−PRF−19500/512) ts − 175 ns Fall Time (Reference Figure in MIL−PRF−19500/512) tf − 35 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N4029, 2N4033 450 1.2 150°C VBESAT, BASE−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 400 350 300 250 25°C 200 150 −55°C 100 50 0 0.1 VCE = 10 V 1 10 0.8 25°C 0.6 150°C 0.4 0.2 IC/IB = 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Base−Emitter Saturation Voltage 1.1 IC/IB = 10 0.2 150°C 25°C 0.1 −55°C 0 0.1 1 10 VBEON, BASE−EMITTER VOLTAGE (V) VCESAT, COLLECTOR−EMITTER SATURATION VOLTAGE (V) −55°C 0 0.1 0.3 1.0 VCE = 1 V −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0 0.1 100 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage 70 1.0 300 mA CIBO, INPUT CAPACITANCE (pF) VCESAT, COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.0 IC = 10 mA 100 mA 0.1 500 mA 0.01 0.01 0.10 1 IB, BASE CURRENT (mA) 60 50 40 30 20 10 0 −5 10 TJ = 25°C fTEST = 10 kHz −4 −3 −2 VBE, BASE−EMITTER (V) Figure 5. Collector Saturation Region Figure 6. Input Capacitance http://onsemi.com 3 −1 0 COBO, OUTPUT CAPACITANCE (pF) 35 30 ft, CURRENT GAIN BANDWIDTH (MHz) 2N4029, 2N4033 TJ = 25°C fTEST = 10 kHz 25 20 15 10 5 0 −20 −18 −16 −14 −12 −10 −8 −6 −4 VBC, BASE−COLLECTOR VOLTAGE (V) −2 0 350 TJ = 25°C VCE = −5 V 300 250 200 150 100 50 0 1 Figure 7. Output Capacitance 10 IC, COLLECTOR CURRENT (mA) Figure 8. Current Gain Bandwidth Product http://onsemi.com 4 100 2N4029, 2N4033 PACKAGE DIMENSIONS TO−18 3 CASE 206AA ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C DETAIL X 3X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- 2N4029, 2N4033 PACKAGE DIMENSIONS TO−39 3−Lead CASE 205AB ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C DETAIL X 3X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. 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