2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO−92/TO-226AA package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 − 200 V Features • Sensitive Gate Trigger Current − 200 mA Maximum • Low Reverse and Forward Blocking Current − 50 mA Maximum, TC = 110°C • Low Holding Current − 5 mA Maximum • Passivated Surface for Reliability and Uniformity • These are Pb−Free Devices G A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 2N5060 50 to 60 Hz, RGK = 1 kW) 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 80°C) IT(RMS) *Average On-State Current (180° Conduction Angles) Value Unit V 30 60 100 200 MARKING DIAGRAM 0.8 A IT(AV) (TC = 67°C) (TC = 102°C) 0.51 0.255 ITSM 10 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s (TC = 67°C) (TC = 102°C) *Forward Peak Gate Power (Pulse Width v 1.0 msec; TA = 25°C) IT(AV) PGM 0.1 W PG(AV) 0.01 W *Forward Peak Gate Current (Pulse Width v 1.0 msec; TA = 25°C) IGM 1.0 A *Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; TA = 25°C) VRGM 5.0 V *Operating Junction Temperature Range TJ −40 to +110 °C *Storage Temperature Range Tstg −40 to +150 °C *Forward Average Gate Power (TA = 25°C, t = 8.3 ms) 12 3 50xx Y WW A 0.51 0.255 2N 50xx YWW TO−92 CASE 29 STYLE 10 A *Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) *Average On-State Current (180° Conduction Angles) K Specific Device Code = Year = Work Week PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *Indicates JEDEC Registered Data. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 10 1 Publication Order Number: 2N5060/D 2N5060 Series THERMAL CHARACTERISTICS Symbol Max Unit *Thermal Resistance, Junction−to−Case (Note 2) Characteristic RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W 2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit − − − − 10 50 mA mA − − 1.7 V − − − − 200 350 − − − − 0.8 1.2 0.1 − − IH − − − − 5.0 10 td tr − − 3.0 0.2 − − OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C IDRM, IRRM ON CHARACTERISTICS VTM *Peak Forward On−State Voltage (Note 4) (ITM = 1.2 A peak @ TA = 25°C) Gate Trigger Current (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 W) Gate Trigger Voltage (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 W) TC = 25°C TC = −40°C TC = 25°C TC = −40°C *Gate Non−Trigger Voltage (VAK = Rated VDRM, RL = 100 W) TC = 110°C Holding Current (Note 3) *(VAK = 7.0 Vdc, initiating current = 20 mA) VGT VGD TC = 25°C TC = −40°C Turn-On Time Delay Time Rise Time (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/ms Turn-Off Time (Forward Current = 1.0 A pulse, Pulse Width = 50 ms, 0.1% Duty Cycle, di/dt = 6.0 A/ms, dv/dt = 20 V/ms, IGT = 1 mA) IGT V V tq 2N5060, 2N5061 2N5062, 2N5064 mA mA ms ms − − 10 30 − − − 30 − DYNAMIC CHARACTERISTICS dv/dt Critical Rate of Rise of Off−State Voltage (Rated VDRM, Exponential, RGK = 1 kW) *Indicates JEDEC Registered Data. 3. RGK = 1000 W is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle p 1%. 5. RGK current is not included in measurement. http://onsemi.com 2 V/ms 2N5060 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 130 120 CASE MEASUREMENT POINT - CENTER OF FLAT PORTION 110 100 dc 90 80 a = 30° 70 60° 90° 120° 130 a a = CONDUCTION ANGLE 180° 60 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) CURRENT DERATING 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING 90 70 dc 50 a = 30° 50 a a = CONDUCTION ANGLE 60° 90° 120° 180° 30 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature http://onsemi.com 3 0.4 2N5060 Series CURRENT DERATING 10 ITSM , PEAK SURGE CURRENT (AMP) 5.0 3.0 2.0 TJ = 110°C 1.0 0.7 5.0 3.0 2.0 0.5 1.0 1.0 2.0 3.0 0.3 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES Figure 4. Maximum Non−Repetitive Surge Current 0.2 0.8 0.1 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) i T , INSTANTANEOUS ON‐STATE CURRENT (AMP) 25°C 7.0 0.07 0.05 0.03 0.02 0.01 120° a a = CONDUCTION ANGLE a = 30° 0.6 60° 180° 90° 0.4 dc 0.2 0 0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 3. Typical Forward Voltage Figure 5. Power Dissipation http://onsemi.com 4 0.5 r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED 2N5060 Series 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (SECONDS) Figure 6. Thermal Response I GT , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 0.8 200 VG , GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 100 RGK = 1.0 k 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 50 2N5062‐64 20 10 5.0 2N5060‐61 2.0 1.0 0.5 0.2 100 110 -75 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current 4.0 I H , HOLDING CURRENT (NORMALIZED) 0.3 −75 VAK = 7.0 V RL = 100 100 VAK = 7.0 V RL = 100 RGK = 1.0 k 3.0 2.0 2N5060,61 1.0 0.8 2N5062‐64 0.6 0.4 -75 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Holding Current http://onsemi.com 5 100 110 100 110 2N5060 Series ORDERING INFORMATION Package Shipping† TO−92 (Pb−Free) 5000 Units / Box Device 2N5060G 2N5060RLRA TO−92 2000 / Tape & Reel 2N5060RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel 2N5060RLRMG TO−92 (Pb−Free) 2000 / Ammo Pack 2N5061G TO−92 (Pb−Free) 5000 Units / Box 2N5061RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel 2N5062G TO−92 (Pb−Free) 5000 Units / Box 2N5062RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel 2N5064RLRMG TO−92 (Pb−Free) 2000 / Ammo Pack 2N5064RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel 2N5064G TO−92 (Pb−Free) 5000 Units / Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 2N5060 Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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