IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com • High Current: IC = 500 mA max • This is a Pb−Free Device (3) (2) (1) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector−Base Voltage V(BR)CBO Collector−Emitter Voltage Emitter−Base Voltage Value 50 Vdc V(BR)CEO 50 Vdc V(BR)EBO 5.0 Vdc IC 500 mAdc Symbol Max Unit Power Dissipation* PD 285 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Collector Current − Continuous R1 Unit Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Total for both Transistors. R2 R1 (4) THERMAL CHARACTERISTICS Characteristic Q1 Q2 (5) (6) SC−74 MARKING DIAGRAM 6 1 D10 M SC−74R 318AA Style 21 D10 = Specific Device Code M = Date Code ORDERING INFORMATION Device IMD10AMT1G Package Shipping† SC−74R 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 0 Publication Order Number: IMD10AMT1G/D IMD10AMT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1(PNP) omitted) Characteristic Symbol Min Max Unit Collector−Base Breakdown Voltage (IC = 50 mAdc, IE = 0 A) V(BR)CBO 50 − Vdc Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0 A) V(BR)CEO 50 − Vdc Emitter−Base Breakdown Voltage (IE = 50 mAdc, IC = 0 A) V(BR)EBO 5.0 − Vdc Collector−Base Cutoff Current (VCB = 50 Vdc, IE = 0 A) ICBO − 100 nA Emitter−Base Cutoff Current (VEB = 6.0 Vdc, IC = 0 A) IEBO − 0.5 mA Collector−Emitter Cutoff Current (VCE = 15 Vdc, IB = 0 A) ICEO − 500 nA Collector−Emitter Cutoff Current (VCE = 25 Vdc, IB = 0 A) ICES − 100 nA 68 100 − 600 VCE(sat) − 0.3 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOL 4.9 − Vdc Input Resistor Q1(PNP) Q2(NPN) R1 70 7.0 130 13 W kW Resistor Ratio Q1(PNP) Q2(NPN) R1/R2 0.008 − 0.012 − OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (VCE = 5.0 V, IC = 100 mA) Q1(PNP) (VCE = 5.0 V, IC = 1.0 mA) Q2(NPN) hFE Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 IMD10AMT1G TYPICAL CHARACTERISTICS (NPN) 1000 IC/IB = 10 VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 10 VCE = 5 V 25°C 75°C −25°C 100 10 1 10 75°C −25°C 1 Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage 100 Vin, INPUT VOLTAGE (V) 75°C 10 25°C 1 −25°C 0.1 0.01 0 100 IC, COLLECTOR CURRENT (mA) VO = 0.2 V VO = 5 V 100 10 IC, COLLECTOR CURRENT (mA) 1 2 3 10 25°C 1 75°C 0.1 4 −25°C 1 10 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 3. Output Current vs. Input Voltage Figure 4. Input Voltage vs. Output Current 4 Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 25°C 0.1 0.01 100 1000 0.001 1 3 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) Figure 5. Output Capacitance http://onsemi.com 3 50 100 IMD10AMT1G TYPICAL CHARACTERISTICS (PNP) 1 1000 IC/IB = 10 VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5 V 100 75°C 25°C −25°C 10 1 10 100 75°C 1000 −25°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. Collector−Emitter Saturation Voltage 10 75°C Vin, INPUT VOLTAGE (V) 100 VO = 0.2 V VO = 5 V 25°C −25°C 10 1 0.1 0.01 0 1 2 3 −25°C 75°C 0.1 4 25°C 1 1 10 100 1000 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 8. Output Current vs. Input Voltage Figure 9. Input Voltage vs. Output Current 25 Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 25°C 0.01 1000 0.001 0.1 20 15 10 5 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) Figure 10. Output Capacitance http://onsemi.com 4 50 IMD10AMT1G PACKAGE DIMENSIONS SC−74R CASE 318AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. D HE 4 5 3 2 6 E 1 DIM A A1 b c D E e L HE q b e A 0.05 (0.002) q c L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 21: PIN 1. COLLECTOR 1 2. EMITTER 2 3. BASE 2 4. COLLECTOR 2 5. EMITTER 1 6. BASE 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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