SANYO 2SC5569

2SA2016 / 2SC5569
Ordering number : EN6309C
SANYO Semiconductors
DATA SHEET
2SA2016/2SC5569
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applicaitons
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
•
• Large current capacity
Adoption of FBET and MBIT processes
• High-speed switching
Low collector-to-emitter saturation voltage
Ultrasmall package facilitales miniaturization in end products
High allowable power dissipation
( )2SA2016
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
Emitter-to-Base Voltage
Unit
(-50)100
V
(-50)100
V
(--)50
V
(--)6
V
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7008B-003
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA2016-TD-E
2SC5569-TD-E
4.5
1.6
2.5
2
0.4
4.0
1.0
1
Packing Type: TD
1.5
TD
Marking
3
0.4
3.0
2SA2016
0.75
2SC5569
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
1.5
FF
AW
LOT No.
0.5
1
SANYO : PCP
2
1
3
2SA2016
3
2SC5569
http://semicon.sanyo.com/en/network
72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259 No.6309-1/8
2SA2016 / 2SC5569
Continued from preceding page.
Parameter
Symbol
Collector Current
Conditions
Ratings
Unit
(--)7
A
Collector Current (Pulse)
IC
ICP
(--)10
A
Base Current
IB
(--)1.2
A
1.3
W
When mounted on ceramic substrate (250mm2×0.8mm)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
VCE=(--)2V, IC=(--)500mA
VCE(sat)2
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
typ
max
200
VCE=(--)10V, IC=(--)500mA
VCE(sat)1
Collector-to-Emitter Saturation Voltage
Ratings
min
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
fT
Cob
Output Capacitance
Conditions
(--)0.1
μA
(--)0.1
μA
560
(290)330
VCB=(--)10V, f=1MHz
IC=(--)3.5A, IB=(--)175mA
MHz
(50)28
IC=(--)2A, IB=(--)40mA
IC=(--)2A, IB=(--)40mA
Unit
pF
(--230)160
(--390)240
mV
(--240)110
(--400)170
mV
(--)0.83
(--)1.2
V
IC=(--)10μA, IE=0A
(--50)100
V
V(BR)CES
V(BR)CEO
IC=(--)100μA, RBE=0Ω
(--50)100
V
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)6
tstg
tf
See specified Test Circuit.
V
(40)30
ns
(225)420
ns
25
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
2SA2016-TD-E
Device
PCP
1,000pcs./reel
2SC5569-TD-E
PCP
1,000pcs./reel
memo
Pb Free
No.6309-2/8
2SA2016 / 2SC5569
IC -- VCE
A
m
A
--50m
A
m
0
4
---30mA
A
0m
0
--1
--20mA
--3
--10mA
--2
IB=0mA
0
--0.4
--0.8
--1.2
--1.6
Collector-to-Emitter Voltage, VCE -- V
3
10mA
2
--5
--4
Ta=
75°
25°C C
--25°
C
--3
--2
--1
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
IT00207
IC -- VBE
8
2SC5569
VCE=2V
7
Collector Current, IC -- A
--6
IB=0mA
2SC5569
IT00206
2SA2016
VCE= --2V
--7
Collector Current, IC -- A
20mA
4
0
0
--2.0
IC -- VBE
--8
6
5
4
3
2
1
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0
--1.2
--1.4
IT00208
7
5
100
7
5
Ta=75°C
3
25°C
--25°C
2
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
10
0.01
5 7 --10
IT00210
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2016
IC / IB=20
3
2
--100
7
5
5°C
Ta=7
°C
--25
3
2
25°C
--10
7
5
3
2
--1.0
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00212
2SC5569
VCE=2V
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
VCE(sat) -- IC
--1000
1.4
IT00209
5
2
5 7 --0.1
1.2
7
3
3
1.0
100
2
2
0.8
hFE -- IC
5
3
10
--0.01
0.6
7
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
2
0.4
1000
2SA2016
VCE= --2V
3
0.2
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
DC Current Gain, hFE
30mA
Ta=7
5°C
25°C
--25°
C
0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
1
--1
7
5
60mA
50mA
40mA
80
6
--5
--4
70mA
90mA
Collector Current, IC -- A
--6
IC -- VCE
7
--90mA
--80mA
--70mA
--60mA
100m
A
2SA2016
Collector Current, IC -- A
--7
5 7 10
IT00211
VCE(sat) -- IC
1000
7
5
2SC5569
IC / IB=20
3
2
100
7
5
5°C
3
2
7
Ta=
C
25°
C
--25°
10
7
5
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00214
No.6309-3/8
2SA2016 / 2SC5569
VCE(sat) -- IC
Ta
=
--1000
7
5
3
2
5°C
--100
7
5
7
Ta=
C
25°
--25°C
3
2
--10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
7
3
2
Ta= --25°C
7
75°C
5
25°C
3
2
--100
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
3
2
100
7
5
5°C
Ta=7
C
--25°
3
2
2
3
5 7 0.1
2
C
25°
3
5 7 1.0
2
3
VBE(sat) -- IC
2SC5569
IC / IB=50
7
5
3
2
1000
Ta= --25°C
7
75°C
5
25°C
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
2SC5569
f=1MHz
3
Output Capacitance, Cob -- pF
100
7
5
3
2
10
7
5
5 7 10
IT00217
Cob -- VCB
5
2SA2016
f=1MHz
2
5 7 10
IT00215
Collector Current, IC -- A
Cob -- VCB
3
3
2
2
100
7
5
3
2
10
7
5
3
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
Collector-to-Base Voltage, VCB -- V
3
5 7 0.1
5
3
2
100
7
5
3
2
10
5 7 1.0
2
3
5 7 10
2
3
5
IT00219
f T -- IC
2SC5569
VCE=10V
7
Gain-Bandwidth Product, f T -- MHz
5
3
1000
2SA2016
VCE= --10V
7
2
Collector-to-Base Voltage, VCB -- V
IT00218
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
1000
7
5
100
0.01
5 7 --10
IT00216
Collector Current, IC -- A
5
2
10000
2SA2016
IC / IB=50
--1000
3
Collector Current, IC -- A
VBE(sat) -- IC
--10000
2SC5569
IC / IB=50
10
0.01
5 7 --10
IT00213
Collector Current, IC -- A
Output Capacitance, Cob -- pF
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
VCE(sat) -- IC
10000
7
5
2SA2016
IC / IB=50
--2
5° 25
C °C
75
°C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--10000
7
5
5
3
2
100
7
5
3
2
10
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00220
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00221
No.6309-4/8
2SA2016 / 2SC5569
ASO
IC=7A
10
s
ms
DC
1.0
7
5
s
0μ
3
2
50
Collector Current, IC -- A
1m
s
0μ
10
10
7
5
op
era
tio
n
3
2
0.1
7
5
2SA2016 / 2SC5569
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
3
2
0.01
0.1
2
3
5 7 1.0
2
3
PC -- Ta
2.0
100ms
ICP=10A
Collector Dissipation, PC -- W
2
2SA2016 / 2SC5569
1.5
1.3
M
ou
nte
do
na
1.0
ce
ram
ic
bo
ard
(25
0m
0.5
m2
✕0
.8m
m)
0
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT00222
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00223
PC -- Tc
4.0
2SA2016 / 2SC5569
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT01535
No.6309-5/8
2SA2016 / 2SC5569
Bag Packing Specification
2SA2016-TD-E, 2SC5569-TD-E
No.6309-6/8
2SA2016 / 2SC5569
Outline Drawing
2SA2016-TD-E, 2SC5569-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.6309-7/8
2SA2016 / 2SC5569
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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mentioned above.
This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No.6309-8/8