2SK3557 Ordering number : EN7169A SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3557 High-Frequency Low-Noise Amplifier Applications Applications • • AM tuner RF amplification Low noise amplifier Features • • • • Large | yfs | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figure Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage VDSX VGDS Gate Current Drain Current Allowable Power Dissipation Conditions Ratings Unit 15 V --15 V IG 10 mA ID PD 50 mA 200 mW 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg Package Dimensions Product & Package Information unit : mm (typ) 7013A-011 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.3 0.5 1.5 Packing Type: TL Marking 1 0.95 2 IR RANK 1.1 2SK3557-6-TB-E 2SK3557-7-TB-E LOT No. 0.05 0.1 3 LOT No. 2.5 0.5 2.9 TB 0.4 1 : Source 2 : Drain 3 : Gate Electrical Connection 3 SANYO : CP 1 2 http://semicon.sanyo.com/en/network 62012 TKIM/60502 TSIM TA-3622 No.7169-1/6 2SK3557 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current Ratings Conditions min typ IG=--10μA, VDS=0V VGS=--10V, VDS=0V --15 VDS=5V, ID=100μA --0.3 Unit max V --1.0 --0.7 10* nA --1.5 V 32* mA VDS=5V, VGS=0V Forward Transfer Admittance IDSS | yfs | 35 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10.0 pF Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 2.9 pF Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB VDS=5V, VGS=0V, f=1kHz 24 * : The 2SK3557 is classified by IDSS as follows : (unit : mA) Rank IDSS 6 10.0 to 20.0 7 16.0 to 32.0 Ordering Information Package Shipping 2SK3557-6-TB-E Device CP 3,000pcs./reel 2SK3557-7-TB-E CP 3,000pcs./reel ID -- VDS 20 memo Pb Free ID -- VDS 20 VGS=0 16 V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.3V --0.4V --0.5V --0.6V --0.7V 0 0 0.4 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 20 8 --0.5V --0.6V 0 22 --0.2V 4 --0.4V --0.7V --0.1V 12 0 2.4 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V ITR02749 ID -- VGS 16 VDS=5V 14 12 ITR02750 ID -- VGS VDS=5V IDSS=15mA 6 4 C 25 6 8 75° 8 10 --2 5°C 10 20 m 15 A mA 10 mA S =3 0m 12 °C A 14 12 Ta = Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 4 2 2 0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0.2 IT04224 0 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0.2 ITR02752 No.7169-2/6 2SK3557 | yfs | -- ID 5 A 30m mA =15 I DSS 3 2 | yfs | -- ID 100 VDS=5V f=1kHz Forward Transfer Admittance, | yfs | -- mS Forward Transfer Admittance, | yfs | -- mS 7 10 7 5 3 VDS=5V VGS=0 f=1kHz 7 5 3 2 10 2 3 5 7 2 1.0 3 5 7 2 10 3 Drain Current, ID -- mA 5 7 VGS(off) -- IDSS 3 3 5 Drain Current, IDSS -- mA 2 IT04226 10 IT04225 Ciss -- VDS 3 VGS=0 f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V VDS=5V ID=100μA 1.0 7 5 3 2 3 5 Drain Current, IDSS -- mA IT04227 10 7 5 7 3 5 7 Noise Figure, NF -- dB 3 2 1.0 3 IT04228 VDS=5V ID=1mA Rg=1kΩ 8 5 2 10 NF -- f 10 VDS=0 f=1MHz 7 2 1.0 Drain-to-Source Voltage, VDS -- V Crss -- VDS 10 Reverse Transfer Capacitance, Crss -- pF 10 3 7 6 4 2 7 0 0.01 5 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 VDS=5V ID=1mA f=1kHz 8 6 4 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Signal Source Resistance, Rg -- kΩ 5 7 0.1 2 3 5 71000 ITR02759 2 3 5 7 1.0 2 3 5 7 10 Frequency, f -- kHz NF -- Rg 10 2 3 IT04229 2 3 5 7100 ITR02758 PD -- Ta 240 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB 2 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR02760 No.7169-3/6 2SK3557 Embossed Taping Specification 2SK3557-6-TB-E, 2SK3557-7-TB-E No.7169-4/6 2SK3557 Outline Drawing 2SK3557-6-TB-E, 2SK3557-7-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.7169-5/6 2SK3557 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.7169-6/6