SANYO ECH8671-TL-H

ECH8671
Ordering number : ENA1456A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8671
General-Purpose Switching Device
Applications
Features
•
•
•
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
--12
V
±10
V
--3.5
A
--30
A
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
150
°C
--55 to +150
°C
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8671-TL-H
Top View
Packing Type : TL
0.25
2.9
Marking
0.15
8
TS
5
2.3
4
1
0.65
0.9
0.25
LOT No.
TL
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
2.8
0 t o 0.02
Bot t om View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7
ECH8671
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1.5A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Ratings
min
typ
Unit
max
--12
V
--0.4
2.7
--10
μA
±10
μA
--1.3
4.6
V
S
59
77
mΩ
90
126
mΩ
145
215
mΩ
330
pF
110
pF
Crss
88
pF
Turn-ON Delay Time
td(on)
7.1
ns
Rise Time
tr
td(off)
30
ns
31
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--3.5A
32
ns
3.9
nC
0.6
nC
1.1
IS=--3.5A, VGS=0V
--0.85
nC
--1.2
V
Switching Time Test Circuit
0V
--4.5V
VDD= --6V
VIN
ID= --1.5A
RL=4Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8671
P.G
50Ω
S
Ordering Information
Device
ECH8671-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1456-2/7
ECH8671
ID -- VDS
--1
.8V
--5.0
--1.5V
--0.5
--2.0
--1.5
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
0
--1.0
160
ID= --0.5A
--1A
100
--1.5A
80
60
40
20
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
25
= --
°C
Ta
2
1.0
°C
75
C
25°
7
5
3
2
0.1
7
--0.01
180
5A
140
120
A
= --1.0
V, I D
--2.5
V GS=
100
= --1.5A
4.5V, I D
V GS= --
80
60
40
20
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
20
40
60
80
100
120
140
160
IT14575
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
--1.1
IT14577
Ciss, Coss, Crss -- VDS
1000
VDD= --6V
VGS= --4.5V
3
0
VGS=0V
--0.01
--0.3
5 7 --10
IT14576
SW Time -- ID
5
--20
IS -- VSD
3
2
2
--3.0
IT14573
= --0.
8V, I D
.
1
-=
VGS
160
--10
7
5
Source Current, IS -- A
3
--2.5
Ambient Temperature, Ta -- °C
10
7
5
--2.0
200
0
--60 --40
--8
VDS= --6V
2
--1.5
RDS(on) -- Ta
IT14574
| yfs | -- ID
3
--1.0
220
180
120
--0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
140
0
IT14572
RDS(on) -- VGS
200
25°
C
--0.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--2.5
5°C
25°
C
--25
°C
--0.1
220
Forward Transfer Admittance, | yfs | -- S
--3.0
Ta=
7
0
Drain-to-Source Voltage, VDS -- V
f=1MHz
7
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--3.5
--1.0
VGS= --1.2V
0
--4.0
--25
°C
--1.0
--4.5
Ta=
75°
C
Drain Current, ID -- A
--1.5
0
VDS= --10V
--5.5
--4.
5
--2.0
ID -- VGS
--6.0
V
--10V --8V
--2.5
Drain Current, ID -- A
--3.5V
--2.5
V
--3.0
100
7
5
td(off)
3
tf
2
tr
10
td(on)
7
Ciss
3
2
Coss
100
5
2
--0.01
Crss
7
3
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT14578
5
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT14579
No. A1456-3/7
ECH8671
VGS -- Qg
7
5
3
2
VDS= --6V
ID= --3A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
PD -- Ta
4.5
IT14580
ID= --3.5A
DC
op
era
tio
--1.0
7
5
3
2
--0.1
7
5
3
2
PW≤10μs
10
0μ
1m s
s
10
10 ms
0m
s
IDP= --30A
n(
Ta
=
25
°C
)
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
--0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT14638
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.5
1.4
1.3
1.2
1.0
al
t
To
di
0.8
n
t
io
ni
0.6
at
ip
1u
ss
Allowable Power Dissipation, PD -- W
1.6
4.0
--10
7
5
3
2
ASO
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14639
No. A1456-4/7
ECH8671
Embossed Taping Specification
ECH8671-TL-H
No. A1456-5/7
ECH8671
Outline Drawing
ECH8671-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1456-6/7
ECH8671
Note on usage : Since the ECH8671 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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different from current conditions on the usage of automotive device, communication device, office equipment,
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solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1456-7/7