SANYO EN1789C

2SK545
Ordering number : EN1789C
SANYO Semiconductors
DATA SHEET
2SK545
N-Channel Junction Silicon FET
Impedance Converter Applications
Applications
•
•
Impedance converter applications
Infrared sensor
Features
•
•
•
Small IGSS
Small Ciss
Ultrasmall package permitting 2SK545-applied sets to be compact
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSS
VGDS
Gate Current
Drain Current
Conditions
Ratings
Unit
40
V
--40
V
IG
10
mA
ID
PD
1
mA
Allowable Power Dissipation
100
mW
Junction Temperature
Tj
Storage Temperature
Tstg
125
°C
--55 to +125
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7013A-011
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
1.5
0.5
0.3
1.1
Packing Type: TB
1
0.95
2
Marking
B11
LOT No.
0.05
2SK545-11D-TB-E
0.1
3
LOT No.
2.5
0.5
2.9
TB
0.4
1 : Source
2 : Drain
3 : Gate
Electrical Connection
3
SANYO : CP
1
2
http://www.sanyosemi.com/en/network/
O3112 TKIM TC-00002836/42099TH (KT)/O2196TS (KOTO) 8-7809/6037KI/3105KI, MT No.1789-1/6
2SK545
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
IDSS
ID=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, VGS=0V
VDS=10V, ID=1μA
Forward Transfer Admittance
VGS(off)
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Gate Cutoff Current
Drain Current
Cutoff Voltage
Ratings
Conditions
min
typ
Unit
max
--40
V
--500
pA
95
μA
55
--1.2
VDS=10V, VGS=0V, f=1kHz
0.05
VDS=10V, VGS=0V, f=1MHz
--4.0
V
0.10
mS
1.7
pF
0.7
pF
Ordering Information
Package
Shipping
memo
CP
3,000pcs./reel
Pb Free
ID -- VDS
100
VGS=0V
50
--0.4V
40
30
--0.6V
20
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
VDS=10V
ID=1μA
1.4
1.3
1.2
1.1
1.0
0.9
50
60
70
80
Drain Current, IDSS -- μA
90
100
IT16958
--2
5
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
IT16956
VGS(off) -- IDSS
1.5
30
0
--1.6
20
0
IT16957
⏐yfs⏐ -- IDSS
0.14
Forward Transfer Admittance, ⏐yfs⏐ -- mS
2
40
10
--1.2V
--1.0V
0
0
50
20
--0.8V
10
60
25
°C
--0.2V
60
70
Ta
=
70
°C
80
Drain Current, ID -- μA
80
Drain Current, ID -- μA
VDS=10V
IDSS=75μA
90
90
Cutoff Voltage, VGS(off) -- V
ID -- VGS
100
75
°C
Device
2SK545-11D-TB-E
VDS=10V
VGS=0V
f=1kHz
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
50
60
70
80
Drain Current, IDSS -- μA
90
100
IT16959
No.1789-2/6
2SK545
PD -- Ta
120
Ciss -- VDS
10
VGS=0
f=1MHz
100
Input Capacitance, Ciss -- pF
Power Dissipation, PD -- mW
7
80
60
40
20
0
3
2
1.0
7
5
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
ITR00844
3
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7 100
ITR00845
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
5
VGS=0
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7 100
ITR00846
No.1789-3/6
2SK545
Embossed Taping Specification
2SK545-11D-TB-E
No.1789-4/6
2SK545
Outline Drawing
2SK545-11D-TB-E
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.0
0.8
0.95
0.95
No.1789-5/6
2SK545
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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This catalog provides information as of October, 2012. Specifications and information herein are subject
to change without notice.
PS No.1789-6/6