15C01C Ordering number : EN7504A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Unit 20 V 15 V 5 700 Mounted on a glass epoxy board (20×30×1.6mm) V mA 1.4 A 300 mW 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7013A-009 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.1 15C01C-TB-E Packing Type: TB Marking 1.5 3 1.1 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.3 YP TB 0.05 0.95 2 LOT No. 1 LOT No. 0.5 2.5 0.5 2.9 Electrical Connection 3 1 2 http://www.sanyosemi.com/en/network/ 92612 TKIM/O3003 TSIM TA-3682 No.7504-1/6 15C01C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=10mA VCE=2V, IC=50mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 300 0.1 μA 0.1 μA 800 330 MHz 3.2 IC=200mA, IB=10mA pF 150 300 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 IC=1mA, RBE=∞ 15 V V V(BR)EBO ton IE=10μA, IC=0A 5 V tstg tf See specified Test Circuit. 30 ns 77 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 470μF + 220μF VBE= --5V VCC=5V IC=20IB1= --20IB2=500mA Ordering Information Device Package Shipping memo CP 3,000pcs./reel Pb Free 15C01C-TB-E IC -- VCE 200 mA A 0.9 0.8m 120 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 600 500 400 5°C 25°C --25 °C 0.5mA 300 Ta= 7 0.6mA Collector Current, IC -- mA 700 160 140 VCE=2V 0.7mA 1.0mA Collector Current, IC -- mA 180 IC -- VBE 800 200 100 20 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT05490 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05491 No.7504-2/6 15C01C hFE -- IC 1000 DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C Ta=75°C 3 --25°C 2 100 7 5 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 3 2 °C 75 5°C --2 5°C = Ta 2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 3 2 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 5 7 100 2 5 7 1000 IT05493 2 Ta= --25°C 1000 7 75°C 25°C 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05495 Collector Current, IC -- mA fT -- IC VCE=2V 5 3 2 100 7 5 1.0 3 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05496 Collector Current, IC -- mA PC -- Ta OUT 1kΩ 2 IB 3 2 1.0 7 5 3 300 M ou nt 250 ed on ag las se 200 po xy 150 bo ar d( 100 20 ✕ 30 ✕ 1. 6m m ) 50 2 0.1 0.1 3 3 Collector Dissipation, PC -- mW ON-resistance, Ron -- Ω 3 IC / IB=20 350 1kΩ 10 7 5 2 VBE(sat) -- IC IT05497 IN 3 5 7 10 5 Ron -- IB f=1MHz 3 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 7 7 100 7 5 2 f=1MHz 2 °C 25 3 Cob -- VCB 1.0 0.1 = Ta 5 5 7 1000 IT05494 Collector Current, IC -- mA 10 °C 75 C 5° --2 7 7 5 5 100 10 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 7 2 10000 IC / IB=50 100 3 IT05492 VCE(sat) -- IC 1000 5 5 7 1000 Collector Current, IC -- mA IC / IB=20 7 7 5 VCE(sat) -- IC 1000 VCE=2V 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05499 No.7504-3/6 15C01C Embossed Taping Specification 15C01C-TB-E No.7504-4/6 15C01C Outline Drawing 15C01C-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.7504-5/6 15C01C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.7504-6/6