2SK3666 Ordering number : EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3666 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • • Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage VDSX VGDS Gate Current Drain Current Allowable Power Dissipation Conditions Ratings Unit 30 V --30 V IG 10 mA ID PD 10 mA 200 mW 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg Package Dimensions Product & Package Information unit : mm (typ) 7013A-011 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.3 0.5 1.5 Packing Type: TL Marking 1 0.95 2 JK RANK 1.1 2SK3666-2-TB-E 2SK3666-3-TB-E 2SK3666-4-TB-E LOT No. 0.05 0.1 3 LOT No. 2.5 0.5 2.9 TB 0.4 1 : Source 2 : Drain 3 : Gate Electrical Connection 3 SANYO : CP 1 2 http://semicon.sanyo.com/en/network 62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303 No.8158-1/6 2SK3666 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current Ratings Conditions min IG=--10μA, VDS=0V VGS=--20V, VDS=0V typ Unit max --30 V --1.0 VDS=10V, ID=1μA --0.18 --0.95 0.6* nA --2.2 V 6.0* mA VDS=10V, VGS=0V Forward Transfer Admittance IDSS | yfs | 6.5 mS Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz 4 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 1.1 pF Static Drain-to-Source On-State Resistance RDS(on) VDS=10mV, VGS=10V 200 Ω VDS=10V, VGS=0V, f=1kHz 3.0 * : The 2SK3666 is classified by IDSS as follows : (unit : mA) Rank IDSS 2 0.6 to 1.5 3 1.2 to 3.0 4 2.5 to 6.0 Ordering Information Package Shipping 2SK3666-2-TB-E Device CP 3,000pcs./reel 2SK3666-3-TB-E CP 3,000pcs./reel 2SK3666-4-TB-E CP 3,000pcs./reel ID -- VDS 5.0 Pb Free ID -- VDS 5 4 3.0 VGS=0V 2.0 --0.1V Drain Current, ID -- mA 4.0 --0.2V --0.3V 1.0 VGS=0V 3 --0.1V 2 --0.2V --0.3V 1 --0.4V --0.4V 0 0 1.0 2.0 3.0 4.0 Drain-to-Source Voltage, VDS -- V 0 5.0 0 ID -- VGS 5 10 20 25 30 ITR00634 ID -- VGS 8 VDS=10V 15 Drain-to-Source Voltage, VDS -- V ITR00633 5 VDS=10V mA .0 =5 S S ID 2 mA Ta =-25 °C 4 2 3.0 75° A --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 Gate-to-Source Voltage, VGS -- V 0 ITR00635 1 C °C 25 1.0m 0 3 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0 ITR00636 No.8158-2/6 Drain Current, ID -- mA 4 6 Drain Current, ID -- mA Drain Current, ID -- mA memo 2SK3666 VGS(off) -- IDSS VDS=10V ID=1.0μA 3 2 --1.0 7 5 3 2 5 7 2 1.0 3 5 7 5 3 2 7 2 1.0 3 5 7 Drain Current, IDSS -- mA S= 3 I DS 2 1.0 7 5 3 2 3 5 7 2 1.0 3 5 7 10 IGDL 3 10n D S G 3 ID DC DC 1n 3 100p 3 10p 3 ID=1mA 0 5 10 15 20 Output Capacitance, Crss -- pF 7 5 3 2 25 ITR00640 Crss -- VDS VGS=0V f=1MHz 7 10 3 IGDL -- VDS 10 2 2 ITR00638 Drain-to-Source Voltage, VDS -- V VGS=0V f=1MHz 3 Input Capacitance, Ciss -- pF A m 1.0 ITR00639 Ciss -- VDS 5 3 5 1p 5 2 10 5.0m A .0m Drain Current, ID -- mA Gate-to-Drain Leak Current, IGDL -- A Forward Transfer Admittance, | yfs | -- mS 7 5 A 7 100n VDS=10V VGS=0V f=1kHz 10 1.0 10 ITR00637 | yfs | -- IDSS 2 VDS=10V f=1kHz 2 0.1 2 10 Drain Current, IDSS -- mA 3 | yfs | -- ID 2 Forward Transfer Admittance, | yfs | -- mS Cutoff Voltage, VGS(off) -- V 5 5 3 2 1.0 7 5 3 1.0 7 2 1.0 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 7 ITR00641 PD -- Ta 240 Allowable Power Dissipation, PD -- mW 5 2 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 ITR00642 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR00646 No.8158-3/6 2SK3666 Embossed Taping Specification 2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E No.8158-4/6 2SK3666 Outline Drawing 2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.8158-5/6 2SK3666 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.8158-6/6