2SK4065 Ordering number : ENA0324A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4065 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 75 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.65 W Allowable Power Dissipation PD 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 735 mJ 70 A Avalanche Current *2 Tc=25°C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7535-001 • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel 2SK4065-DL-1E 4.5 1.4 3.0 1.75 5.3 Marking K4065 0.9 1.3 7.9 4 Packing Type: DL 8.0 9.2 13.4 1.2 10.0 LOT No. DL 0.254 2 3 1.27 0.8 0.5 2.4 2.54 0 to 0.25 2.54 Electrical Connection 1.35 1 2, 4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 SANYO : TO-263-2L 3 http://semicon.sanyo.com/en/network 53012 TKIM TC-00002767/41006QA MSIM TB-00002239 No. A0324-1/7 2SK4065 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=75V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=50A 47 RDS(on)1 ID=50A, VGS=10V 4.6 6.0 mΩ RDS(on)2 ID=50A, VGS=4V 5.7 8.0 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 75 V 1 μA ±10 μA 2.6 78 V S 12200 pF 950 pF Crss 730 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 460 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=35V, VGS=10V, ID=100A ns 640 ns 220 nC 40 nC 50 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=35V VIN ≥50Ω ID=50A RL=0.7Ω VIN 2SK4065 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V 930 D PW=10μs D.C.≤1% VOUT G 2SK4065 P.G 50Ω S Ordering Information Device 2SK4065-DL-1E Package Shipping memo TO-263-2L 800pcs./reel Pb Free No. A0324-2/7 2SK4065 100 VGS=3V 80 60 120 100 80 60 40 40 20 20 25° --25°C C 120 140 Tc= 75° C 140 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 0 0.5 1.0 1.5 20 15 10 Tc=75°C 25°C 5 3.0 3.5 4.0 4.5 IT10699 Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 2.5 RDS(on) -- Tc 14 ID=50A Single pulse 2.0 Gate-to-Source Voltage, VGS -- V IT10698 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc= --2 5°C 75°C 6V V 8V 160 Drain Current, ID -- A Drain Current, ID -- A 160 VDS=10V Single pulse 180 10 180 ID -- VGS 200 Tc=25°C Single pulse 25°C ID -- VDS 200 12 10 4V S= 8 VG A, 50 I D= 6 V =10 GS A, V 50 I D= 4 2 --25°C 0 --50 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID °C 25 C 5° 2 = Tc --2 75 10 °C 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 tf 5 3 2 tr 100 0.4 0.6 0.8 1.0 1.2 1.4 IT10703 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss 10k 7 5 3 2 Coss 1k Crss 5 7 5 0.1 0.2 7 td(on) 150 IT10701 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns td(off) 125 1.0 7 5 3 2 0 VDD=35V VGS=10V 2 100 10 7 5 3 2 5 7 100 IT10702 SW Time -- ID 3 75 VGS=0V Single pulse 100 7 5 3 2 0.1 7 5 3 2 0.01 3 2 1.0 0.1 50 IS -- VSD 3 2 7 3 25 Case Temperature, Tc -- °C VDS=10V Single pulse 5 0 --25 IT10700 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 10 25°C --25°C 1 Tc=7 5°C 0 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10704 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10756 No. A0324-3/7 2SK4065 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 100 7 5 3 2 10 7 5 3 2 PD -- Ta 1.5 1.0 0.5 0μ s μs Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT10881 PD -- Tc 100 1.65 10 10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 1ms 10 ms DC 0m op s era tio n ID=100A IT10705 0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT10707 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10708 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=400A(PW≤10μs) 0.1 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 VDS=35V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10709 No. A0324-4/7 2SK4065 Taping Specification 2SK4065-DL-1E No. A0324-5/7 2SK4065 Outline Drawing 2SK4065-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No. A0324-6/7 2SK4065 Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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