CPH5871 Ordering number : ENA1401A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5871 General-Purpose Switching Device Applications Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting • Protection diode in Halogen free compliance • 1.8V drive [MOSFET] • Ultrahigh-speed switching • Short reverse recovery time • Low forward voltage [SBD] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 30 ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg V ±12 V 3.5 A PW≤10μs, duty cycle≤1% 14 A When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.9 W 150 °C --55 to +125 °C 30 V [SBD] Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 35 V 1 A 10 A --55 to +125 °C --55 to +125 °C Product & Package Information unit : mm (typ) 7017A-005 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5871-TL-H 0.15 2.9 3 Packing Type : TL Marking YZ 0.05 1.6 2.8 0.2 0.6 Package Dimensions LOT No. Repetitive Peak Reverse Voltage 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode Electrical Connection 5 4 3 SANYO : CPH5 1 2 http://semicon.sanyo.com/en/network 61312 TKIM/12809PE MSIM TC-00001794 No. A1401-1/7 CPH5871 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=2A 2.0 RDS(on)1 ID=2A, VGS=4.5V 40 52 mΩ RDS(on)2 ID=1A, VGS=2.5V 53 74 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 82 132 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 30 V 1 μA ±10 μA 1.3 V 3.4 S 430 pF 59 pF Crss 38 pF td(on) tr 10 ns 41 ns 36 ns Fall Time td(off) tf Total Gate Charge Qg VDS=10V, f=1MHz See specified Test Circuit. Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=3.5A, VGS=0V VR VF1 IR=0.5mA IF=0.7A VF2 IF=1A VR=16V Interterminal Capacitance IR C Reverse Recovery Time trr VDS=15V, VGS=4.5V, ID=3.5A 37 ns 4.7 nC 0.8 nC 1.1 nC 0.8 1.2 V 0.45 0.5 V 0.48 0.53 [SBD] VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Switching Time Test Circuit (MOSFET) 4.5V 0V D PW=10μs D.C.≤1% 27 pF 10 ns Duty≤10% ID=2A RL=7.5Ω VOUT VIN μA trr Test Circuit (SBD) VDD=15V VIN V 15 50Ω 100Ω 10Ω 10mA Reverse Current V 100mA Forward Voltage 30 100mA Reverse Voltage 10μs --5V G trr P.G 50Ω S CPH5871 Ordering Information Device CPH5871-TL-H Package Shipping memo CPH5 3,000pcs./reel Pb Free and Halogen Free No. A1401-2/7 CPH5871 ID -- VDS 2.5 2.0 1.5 1.5V 1.0 0.5 VGS=1.2V 0 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.9 120 A =0.5 V, I D 100 =1.8 VGS 80 1.0A I D= , V 5 =2. 2.0A VGS , I D= 4.5V = VGS 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IS -- VSD 7 5 140 1 2 3 4 5 6 7 8 | yfs | -- ID 9 10 IT14372 [MOSFET] VDS=10V 5 3 2 C 5° -2 =- Ta 1.0 7 75 °C °C 25 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT14348 SW Time -- ID [MOSFET] VDD=15V VGS=4.5V 3 Switching Time, SW Time -- ns Ta= 75°C 25°C --25 °C Source Current, IS -- A 0 2 100 7 5 td(off) 3 tf 2 td(on) 10 tr 7 5 3 0 0.2 0.4 0.6 0.8 1.0 2 0.01 1.2 Diode Forward Voltage, VSD -- V IT14349 Ciss, Coss, Crss -- VDS [MOSFET] 1000 Ciss 3 2 100 7 Coss 5 Crss 3 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14351 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT14350 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V 5 2 Drain Current, ID -- A f=1MHz 7 Ciss, Coss, Crss -- pF 20 5 2 10 40 Drain Current, ID -- A [MOSFET] 3 0.01 60 IT14373 1.0 7 5 0.1 7 5 80 0.1 0.01 3 2 100 7 VGS=0V 3 ID=1A 2A 0.5A Gate-to-Source Voltage, VGS -- V 160 2 [MOSFET] Ta=25°C 120 0 1.0 Drain-to-Source Voltage, VDS -- V IT14371 RDS(on) -- Ta [MOSFET] 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.3 Forward Transfer Admittance, | yfs | -- S 0 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.0 [MOSFET] 1.8V 7.0V 4.5V 3.5 Drain Current, ID -- A 3.5V 2.5V 4.0 [MOSFET] VDS=15V ID=3.5A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 6 IT14374 No. A1401-3/7 CPH5871 ASO IDP=14A 10 7 5 Drain Current, ID -- A [MOSFET] PW≤10μs 100 1m μs s ID=3.5A 3 2 10 DC 1.0 7 5 op Operation in this area is limited by RDS(on). 3 2 0.1 7 5 10 ms 0m era s tio n(T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm)1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V [SBD] 2 3 2 0.1 7 5 0.2 0 20 40 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF -- V (2) (4)(3) 360° 0.5 Sine wave 0.4 180° 360° 0.3 0.2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.1 0 0 0.2 0.4 0.6 0.8 140 160 IT14376 [SBD] 75°C 50°C 10 5 25°C 1.0 5 0°C 0.1 5 0.01 5 --25°C 0 5 10 IFSM -- t 15 20 25 30 C -- VR 3 35 IT09554 [SBD] 2 100 7 5 3 2 10 1.0 Average Output Current, IO -- A 14 120 Reverse Voltage, VR -- V Interterminal Capacitance, C -- pF (1) θ 0.6 100 Ta=125°C 100°C 100 5 0.0001 [SBD] Rectangular wave 0.7 80 IR -- VR 10000 5 IT09553 PF(AV) -- IO 0.8 60 0.001 5 Ta= 1 2 Average Forward Power Dissipation, PF(AV) -- W 0.4 Ambient Temperature, Ta -- °C Reverse Current, IR -- μA 5 25° C 100 °C 75°C 50°C 25°C 0°C --25°C Forward Current, IF -- A 7 3 Surge Forward Current, IFSM(Peak) -- A 0.6 1000 5 1.0 0.01 0.8 0 5 [MOSFET] When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.9 IT14375 IF -- VF 3 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 3 2 1.2 IT09555 [SBD] 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A1401-4/7 CPH5871 Embossed Taping Specification CPH5871-TL-H No. A1401-5/7 CPH5871 Outline Drawing CPH5871-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1401-6/7 CPH5871 Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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