STMICROELECTRONICS 1N5822U

1N5822U
Aerospace 40 V power Schottky rectifier
Features
Aerospace applications
■
Surface mount hermetic package
■
High thermal conductivity materials
■
Very small conduction losses
■
Negligible switching losses
■
Extremely fast switching
■
Low forward voltage drop
■
Package weight: 0.18 g
■
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
■
K
A
■
K
A
LCC2B
ESCC qualified
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5822U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
Table 1.
Device summary(1)
Order code
ESCC detailed
specification
Quality level
Lead finish
EPPL
1N5822UB1
-
Engineering
model
Gold plated
-
1N5822U02B
5106/020/02
Flight part
Solder dip
Y
IF(AV)
VRRM
Tj(max)
VF (max)
3A
40 V
150 °C
0.47 V
1. Contact ST sales office for information about the specific conditions for products in die form and gold plated versions.
September 2011
Doc ID 16007 Rev 2
1/7
www.st.com
7
Characteristics
1
1N5822U
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward rectified current
Tc = 135 °C, δ = 0.5
3
A
IFSM
Forward surge current
tp = 10 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 150
°C
150
°C
245
°C
Maximum operating junction temperature
Tj
Maximum soldering temperature
Tsol
1.
Parameter
dPtot
--------------dTj
(1)
(2)
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
2. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Table 3.
Thermal resistance
Symbol
Rth (j-c)
Table 4.
Symbol
Parameter
IR
Parameter
Tests conditions
Reverse current
Tj = 25 °C
Tj = 25 °C
°C/W
Min.
Typ.
Max.
-
-
40
-
-
80
-
-
12
-
-
0.4
-
-
0.56
-
-
0.485
-
-
0.455
-
-
0.70
VR = 40 V
IF = 1A
Tj = -55 °C
VF
7
Static electrical characteristics
Tj = 100 °C
(2)
Unit
Junction to case
Tj = -55 °C
(1)
Value
Forward voltage
Tj = 25 °C
IF = 3 A
Tj = 100 °C
Tj = 25 °C
IF = 9.4 A
Unit
µA
mA
V
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 680 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.32 x IF(AV) + 0.050 IF2(RMS )
Table 5.
Symbol
Cj
2/7
Dynamic characteristics
Parameter
Diode capacitance
Test conditions
VR = 5 V, F = 1 MHz
Doc ID 16007 Rev 2
Min.
Typ.
Max.
Unit
-
-
240
pF
1N5822U
Characteristics
Figure 1.
2.4
Average forward power dissipation Figure 2.
versus average forward current
PF(av)(W)
3.5
δ=0.05
2.2
δ=0.1
IF(av)(A)
δ=1
δ=0.5
d=0.2
Average forward current versus
ambient temperature (δ = 0.5)
Rth(j-a)=Rth(j-c)
3.0
2.0
1.8
2.5
1.6
1.4
2.0
1.2
1.5
1.0
0.8
T
T
0.4
0.5
IF(av) (A)
0.2
δ=tp/T
δ=tp/T
tp
Tamb(°C)
tp
0.0
0.0
0.0
0.5
Figure 3.
50
Rth(j-a)=120 °C/W
1.0
0.6
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
Figure 4.
1.0
45
0.9
40
0.8
35
0.7
Tc=25 °C
25
20
75
100
125
150
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
0.5
0.4
Tc=75 °C
0.3
15
Tc=125 °C
0.2
IM
5
1.E-03
tp(s)
0.0
1.E-02
Figure 5.
Single pulse
0.1
t(s)
t
δ =0.5
0
1.E+02
50
0.6
30
10
25
1.E-01
1.E+00
Reverse leakage current versus
reverse voltage applied (typical
values)
1.E-04
1.E-03
Figure 6.
IR(mA)
10.00
Tj=150°C
1.E-02
1.E-01
1.E+00
Forward voltage drop versus
forward current (typical values)
IFM(A)
Tj=125°C
1.E+01
Tj=100°C
Tj=125°C
1.00
1.E+00
Tj=75°C
Tj=25°C
Tj=100°C
Tj=50°C
1.E-01
0.10
Tj=25°C
1.E-02
VR(V)
VFM(V)
0.01
1.E-03
0
5
10
15
20
25
30
35
40
0.0
Doc ID 16007 Rev 2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
3/7
Characteristics
Figure 7.
1N5822U
Non repetitive surge peak forward current versus number of cycles
100
IFSM(A)
F=50 Hz
Tj initial=25°C
80
60
40
20
Number of cycles
0
1
4/7
10
Doc ID 16007 Rev 2
100
1000
1N5822U
2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
Leadless chip carrier 2 (LCC2B) package dimensions
Dimensions
Ref.
A
D
B
2
C
Pin 2 Cathode
Inches
Min.
Typ. Max.
Min.
Typ.
Max.
A(1)
2.04
2.23
2.42
0.080
0.088 0.095
B
5.27
5.4
5.6
0.207
0.213 0.220
C
3.49
3.62
3.82
0.137
0.143 0.150
D
1.71
1.90
2.09
0.067
0.075 0.082
E
0.48
-
0.71
0.019
-
0.028
F
-
1.4
-
-
0.055
-
G
-
3.32
-
-
0.131
-
H
-
1.82
-
-
0.072
-
I
-
0.15
-
-
0.006
-
r1
-
0.15
-
-
0.006
-
r2
-
0.20
-
-
0.008
-
Note 1
1
F
Millimeters
Note 1
Pin 1 Anode
E
H
I
1
Note 1
E
2
r1
G
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package
Doc ID 16007 Rev 2
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Ordering information
3
1N5822U
Ordering information
Table 7.
Ordering information(1)
Order code
ESCC detailed
specification
Package
Lead finish
Marking
1N5822UB1
-
LCC2B
Gold plated
22UB1
EPPL Weight
0.18 g
1N5822U02B
5106/020/02
Solder dip
22U02B
Y
Packing
Waffle
pack
1. Contact ST sales office for information about the specific conditions for products in die form and gold
plated versions.
4
Revision history
Table 8.
6/7
Document revision history
Date
Revision
Changes
10-Aug-2009
1
First issue.
23-Sep-2011
2
Updated Table 1 and Table 7 for ESCC qualification.
Doc ID 16007 Rev 2
1N5822U
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