STMICROELECTRONICS 2STL1525

2STL1525
Low voltage high performance NPN power transistor
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
Applications
■
Emergency lighting
■
LED drive
■
Motherboard and hard disk drive
■
Mobile equipment
■
DC-DC converter, voltage regulation
TO-92MOD
Figure 1.
TO-92MOD-AP
Internal schematic diagram
Description
The device is a NPN transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
2STL1525
2STL1525
TO-92MOD
Bag
2STL1525-AP
2STL1525
TO-92MOD-AP
Ammopack
December 2010
Doc ID 16054 Rev 2
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Electrical ratings
1
2STL1525
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
VCEX
Collector-emitter voltage (VBE = -1.5 V)
95
V
VCEO
Collector-emitter voltage (IB = 0)
25
V
VEBO
Emitter-base voltage (IC = 0)
5
V
Collector current
5
A
Collector peak current (tP < 5 ms)
10
A
Base current
1
A
1.5
W
-65 to 150
°C
150
°C
Value
Unit
83
°C/W
IC
ICM
IB
PTOT
Total dissipation at Tamb = 25 °C
TSTG
Storage temperature
TJ
Table 3.
Symbol
RthJA
2/8
Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-ambient __max
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2STL1525
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 50 V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
0.1
µA
Collector-emitter
breakdown voltage
(VBE = -1.5 V)
IC = 1 mA
95
V
IC = 10 mA
25
V
Emitter-base breakdown
voltage (IC = 0)
IE = 100 µA
5
V
DC current gain
IC = 0.5 A
IC = 3 A
IC = 5 A
VCE = 2 V
VCE = 2 V
VCE = 5 V
V(BR)CEX
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
hFE (1)
150
100
500
150
220
500
mV
mV
1.2
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 3 A
IC = 3.5 A
IB = 300 mA
IB = 40 mA
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 3 A
IB = 300 mA
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V, f = 1 MHz
20
pF
fT
Transition frequency
VCE = 10 V
120
MHz
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 1.5 A
VCC = 10 V
IB1 = -IB2 = 150 mA
60
450
ns
ns
IC = 50 mA
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2%
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Package mechanical data
3
2STL1525
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5.
TO-92MOD mechanical data
mm.
Dim.
Min.
Max.
A
4.7
5.1
A1
1.730
2.030
b
0.4
0.6
b1
0.9
1.1
c
0.4
0.5
D
5.8
6.2
D1
4.0
E
8.4
e
8.8
1.5
e1
2.9
3.1
L
13.8
14.2
K
h
4/8
Typ.
1.6
0.0
Doc ID 16054 Rev 2
0.380
2STL1525
Package mechanical data
Figure 2.
TO-92MOD drawing mechanical data
8190862_B
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Package mechanical data
2STL1525
TO-92MOD-AP ammopack dimension
8231868_B
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2STL1525
4
Revision history
Revision history
Table 6.
Document revision history
Date
Revision
Changes
31-Jul-2009
1
Initial release.
01-Dec-2010
2
Document status promoted from preliminary data to datasheet.
Updated package mechanical data Table 5 on page 4 and Figure 2
on page 5.
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2STL1525
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