UTC-IC 10N60_10

UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
1
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„
1
TO-220F
FEATURES
* 10A, 600V, RDS(ON) [email protected] =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
„
TO-220
1
SYMBOL
TO-220F1
1
TO-263
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60L-x-TA3-T
10N60G-x-TA3-T
10N60L-x-TF1-T
10N60G-x-TF1-T
10N60L-x-TF3-T
10N60G-x-TF3-T
10N60L-x-TQ2-R
10N60G-x-TQ2-R
10N60L-x-TQ2-T
10N60G-x-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
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QW-R502-119.E
10N60
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
600
V
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
38
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
700
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation
PD
TO-220F/TO-220F1
50
W
TO-263
178
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
10N60-A
10N60-B
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient
TO-220
TO-220F/TO-220F1
TO-263
Junction to Case
„
θJC
RATING
62.5
0.8
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
BVDSS
BVDSS
IDSS
MIN TYP MAX UNIT
VGS = 0V, ID = 250μA
600
VGS = 0V, ID = 250μA
650
Drain-Source Leakage Current
VDS = 600V, VGS = 0V
1
Forward
VGS = 30 V, VDS = 0 V
100
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 4.75A
0.6 0.73
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1570 2040
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
166 215
Reverse Transfer Capacitance
CRSS
18
24
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
23
55
VDD=300V, ID =10A, RG =25Ω
Turn-On Rise Time
tR
69
150
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
144 300
Turn-Off Fall Time
tF
77
165
Total Gate Charge
QG
44
57
VDS=480V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
6.7
(Note 1, 2)
Gate-Drain Charge
QGD
18.5
Drain-Source Breakdown Voltage
10N60-A
10N60-B
TEST CONDITIONS
UNISONIC TECHNOLOGIES CO., LTD
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V
V
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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10N60
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Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
VGS = 0 V, IS = 10A,
Reverse Recovery Time
tRR
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
420
4.2
1.4
V
10
A
38
A
ns
µC
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10N60
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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10N60
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-119.E
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
„
Gate-Source Voltage, VCG (V)
Capacitance, (pF)
10N60
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-119.E
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage,
BVDSS (Normalized)
„
Maximum Drain Current vs. Case Temperature
Maximum Safe Operating Area
2
10
10
10μs
8
100μs
101
Drain Current, ID (A)
Drain Current, ID (A)
Operation in this Area is United by RDM
1ms
10ms
100ms
DC
100
Notes:
1.TC=25℃
2.TJ=150℃
3.Single Pulse
10-1 0
10
102
101
Drain-Source Voltage, VDS (V)
6
4
2
103
0
25
50
75
100
125
Case Temperature, TC (℃)
150
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
-1
10
0.1
0.05
0.02
PDW
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
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t1
t2
100
101
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10N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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