UNISONIC TECHNOLOGIES CO., LTD 20N65 Preliminary Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N65 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies. 1 TO-247 FEATURES * RDS(ON) = 0.45Ω @VGS = 10 V * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N65L-T47-T 20N65G-T47-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube 1 of 3 QW-R502-731.a 20N65 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V 20 A Continuous ID Drain Current (TC=25°C) Pulsed IDM 80 A Avalanche Energy Single Pulsed(Note 2) EAS 1200 mJ Power Dissipation (TC=25°C) PD 300 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH THERMAL DATA PARAMETER SYMBOL θJC Junction to Case RATINGS 0.42 UNIT °С/ W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=650V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V 650 VDS=VGS, ID=250µA VGS=10V, ID=10A, Pulse test, t≤300µs, duty cycle d≤2% 2.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=520V, ID=10A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDS=325V, ID=10A, Turn-OFF Delay Time tD(OFF) RG=2Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS VGS=0V Current Maximum Body-Diode Pulsed Current ISM Repetitive IF=IS, VGS=0V, Pulse test, Drain-Source Diode Forward Voltage VSD t≤300µs, duty cycle d≤2% Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 10 µA +100 nA -100 nA 4.0 V 0.32 0.45 Ω 4500 420 140 pF pF pF 150 29 60 20 43 70 40 170 40 85 40 60 90 60 nC nC nC ns ns ns ns 20 A 80 A 1.5 V 2 of 3 QW-R502-731.a 20N65 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-731.a