UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERING INFORMATION Normal 2SB1202-x-T6C-K 2SB1202-x-TM3-T 2SB1202-x-TN3-R 2SB1202-x-TN3-T Order Number Lead Free Plating 2SB1202L-x-T6C-K 2SB1202L-x-TM3-T 2SB1202L-x-TN3-R 2SB1202L-x-TN3-T Halogen Free 2SB1202G-x-T6C-K 2SB1202G-x-TM3-T 2SB1202G-x-TN3-R 2SB1202G-x-TN3-T www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-126C TO-251 TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E B C E Packing Bulk Tube Tape Reel Tube 1 of 5 QW-R217-005.E 2SB1202 PNP PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT -60 V -50 V -6 V TO-126C 20 W TO-251 Collector Power Dissipation Tc=25°C PD 28 W TO-252 28 W DC IC -3 A Collector Current PULSE ICP -6 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO THERMAL DATA PARAMETER Junction to Case SYMBOL TO-126C TO-251 TO-252 θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time RATINGS 6.25 4.53 4.53 SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC=-10μA, IE=0 IC=-1mA, RBE=∞ IE=-10μA, IC=0 VCB=-40V,IE=0 VEB=-4V,IC=0 IC=-2A, IB=-100mA IC=-2A, IB=-100mA VCE=-2V, Ic=-100mA VCE=-2V, Ic=-3A VCE=-10V, IC=-50mA VCB=-10V, f=1MHz See test circuit See test circuit See test circuit MIN -60 -50 -6 TYP -0.35 -0.94 100 35 150 39 70 450 35 MAX -1 -1 -0.7 -1.2 560 UNIT V V V μA μA V V MHz pF ns ns ns CLASSIFICATION OF hFE1 RANK RANGE R 100-200 S 140-280 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw T 200-400 U 280-560 2 of 5 QW-R217-005.E 2SB1202 PNP PLANAR TRANSISTOR TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R217-005.E 2SB1202 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R217-005.E 2SB1202 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R217-005.E