2SC1515(K) Silicon NPN Triple Diffused ADE-208-1055 (Z) 1st. Edition Mar. 2001 Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CES voltage 200 — — V I C = 10 µA, RBE = 0 V(BR)CEO 150 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 µA VCB = 20 V, IE = 0 DC current transfer ratio hFE 30 — 300 Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 10 mA, IB = 1 mA Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 10 mA, IB = 1 mA Gain bandwidth product fT 60 — — MHz VCE = 6 V, IC = 10 mA Collector output capacitance Cob — — 10 pF VCB = 6 V, IE = 0, f = 1 MHz 2 Symbol VCE = 6 V, IC = 10 mA 2SC1515 (K) Typical Output Characteristics 20 200 180 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 16 160 140 12 C = 20 0 120 m W 100 8 80 4 40 60 20 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Collector Cutoff Current vs. Ambient Temperature 100 1,000 VCE = 6 V VCB = 20 V 100 10 1.0 0.1 DC Current Transfer hFE Collector Cutoff Current ICBO (nA) P 80 60 40 20 0 0 120 160 200 40 80 Ambient Temperature Ta (°C) 1 3 10 30 Collector Current IC (mA) 100 3 DC Current Transfer Ratio vs. Ambient Temperature DC Current Transfer Ratio hFE 200 160 120 80 40 0 4 VCE = 6 V IC = 10 mA 60 80 100 20 40 Ambient Temperature Ta (°C) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SC1515 (K) Collector to Emitter Saturation Voltage vs. Collector Current 1.2 1.0 IC = 10 IB 0.8 0.6 0.4 0.2 0 0.5 5.0 10 20 1.0 2.0 Collector Current IC (mA) 50 2SC1515 (K) Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SC1515 (K) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6