2SK3019 Transistor Small switching (30V, 0.1A) 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05 (1) Source (2) Gate (3) Drain ROHM : EMT3 E I A J : SC-75A JEDEC : SOT-416 !Structure Silicon N-channel MOSFET Abbreviated symbol : KN !Absolute maximum ratings (Ta=25°C) !Equivalent circuit Parameter Drain-source voltage Symbol Limits Unit VDSS 30 V VGSS ±20 V ID 100 mA IDP∗1 200 mA IDR 100 mA IDRP∗1 200 mA Total power dissipation (Tc=25°C) PD∗2 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55~+150 °C Gate-source voltage Continuous Drain current Reverse drain current Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤50% ∗2 With each pin mounted on the recommended lands. 0.1Min !Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Drain Gate ∗ Gate Protection Diode Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. 2SK3019 Transistor !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit IGSS − − ±1 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V Zero gate voltage drain current IDSS − − 1.0 µA VDS=30V, VGS=0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA Static drain-source on-state resistance RDS(on) − 5 8 Ω ID=10mA, VGS=4V RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V Forward transfer admittance |Yfs| 20 − − ms ID=10mA, VDS=3V Input capacitance Ciss − 13 − pF VDS=5V Output capacitance Coss − 9 − pF VGS=0V Reverse transfer capacitance Crss − 4 − pF f=1MHz Turn-on delay time td(on) − 15 − ns ID=10mA, VDD tr − 35 − ns VGS=5V td(off) − 80 − ns RL=500Ω tr − 80 − ns RGS=10Ω Parameter Gate-source leakage Rise time Turn-off delay time Fall time Conditions 5V !Packaging specifications Package Type Taping TL Code Basic ordering unit (pieces) 3000 2SK3019 0.15 200m 3V 100m Ta=25°C Pulsed 3.5V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V 0.1 2.5V 0.05 2V 1 2 3 VDS=3V Pulsed 50m 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m VGS=1.5V 0 0 GATE THRESHOLD VOLTAGE : VGS(th) (V) !Electrical characteristic curves 4 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical output characteristics 5 0.1m 0 1 2 3 4 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical transfer characteristics 2 VDS=3V ID=0.1mA Pulsed 1.5 1 0.5 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.3 Gate threshold voltage vs. channel temperature 2SK3019 Transistor 50 Ta=125°C 75°C 25°C −25°C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 20 10 5 2 1 0.5 0.001 0.002 0.5 DRAIN CURRENT : ID (A) 0.05 0.1 0.5 ID=50mA 4 3 2 VDS=3V Pulsed Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 50 5 CAPACITANCE : C (pF) 20m 0V 5m 2m 1m 0.5m 10 Coss Crss 2 15 20 200m VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ciss 5 10 0.1m 0.5 Fig.9 Reverse drain current vs. source-drain voltage (Ι) 1000 Ta=25°C f=1MHZ VGS=0V 20 50m VGS=4V 0 0 Fig.8 Forward transfer admittance vs. drain current Ta=25°C Pulsed 100m ID=0.05A DRAIN CURRENT : ID (A) Fig.7 Static drain-source on-state resistance vs. channel temperature 200m ID=0.1A Fig.6 Static drain-source on-state resistance vs. gate-source voltage 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) ID=100mA 6 5 5 GATE-SOURCE VOLTAGE : VGS (V) 0.2 7 10m 0.2 0.5 VGS=4V Pulsed CHANNEL TEMPERATURE : Tch (°C) REVERSE DRAIN CURRENT : IDR (A) 0.02 10 Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 0.01 Ta=25°C Pulsed DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current (Ι) 8 0.005 REVERSE DRAIN CURRENT : IDR (A) 20 15 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 td(off) 200 100 50 tr 20 td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) 0.5 0.1 0.2 0.5 1 2 5 10 20 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical capacitance vs. drain-source voltage 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) 2SK3019 Transistor !Switching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time measurement circuit tr td (off) tf toff Fig.14 Switching time waveforms