Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE(sat) • Large collector current IC 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter 90˚ 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 0.65±0.1 Symbol Rating Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 2 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 3 2.05±0.2 ■ Features 4.5±0.2 3.8±0.2 10.8±0.2 7.5±0.2 1: Emitter 2: Collector 3: Base MT-3 (MT3 Type Package) 2.5±0.2 2.5±0.2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 200 mA 120 hFE2 VCE = 2 V, IC = 1.0 A 80 Collector to emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA Base to emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance Cob 5 V 340 0.15 0.3 IC = 1 A, IB = 50 mA 0.9 1.2 VCE = 10 V, IE = −50 mA, f = 200 MHz 150 VCB = 10 V, IE = 0, f = 1 MHz 23 V V MHz 35 pF Note) *: Rank classification Rank R S hFE1 120 to 240 170 to 340 1 2SD2178 Power Transistors PC T a IC VCE Collector current IC (A) 1.2 0.8 0.4 IB=400µA 80 350µA 300µA 60 250µA 200µA 40 150µA 100µA 20 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 3 Ta=–25˚C 25˚C 0.1 0.03 0.1 0.3 1 3 200 Ta=25˚C 150 Ta=–25˚C 100 50 0.1 0.3 1 1 3 20 10 0 30 100 3 200 160 120 80 40 0 –1 10 –3 –10 –30 Emitter current IE (mA) Collector to base voltage VCB (V) Without heat sink 103 102 10 1 10–1 10–4 10–3 10–2 10 VCB=10V f=200MHz Ta=25˚C 104 Thermal resistance Rth(t) (˚C/W) Collector output capacitance Cob (pF) 0.3 Rth(t) t 30 10 0.1 fT I E Collector current IC (A) 40 3 0.01 Collector current IC (A) Ta=75˚C 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 1 0.03 240 Cob VCB 50 0.1 0.001 0.01 0.03 12 250 Collector current IC (A) 60 –25˚C VCE=2V Forward current transfer ratio hFE 10 0.01 0.01 0.03 Ta=75˚C 25˚C 0.3 300 IC/IB=50 75˚C 10 1 hFE IC 30 0.3 8 3 Collector to emitter voltage VCE (V) VBE(sat) IC 100 1 6 IC/IB=50 0.003 50µA 0 10 Transition frequency fT (MHz) Collector power dissipation PC (W) 100 1.6 0 2 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Without heat sink Base to emitter saturation voltage VBE(sat) (V) VCE(sat) IC 120 2.0 10–1 1 Time t (s) 10 102 103 104 –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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